Prof. Shigehisa Arai Profile

Prof. Shigehisa Arai

Professor at Tokyo Institute of Technology

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Publications (6)

Proceedings Article | 9 January 2015 Paper

Semiconductor lasers for versatile applications from global communications to on-chip interconnects

Shigehisa Arai

Proceedings Volume 9444, 944403 (2015) https://doi.org/10.1117/12.2176532

KEYWORDS: Semiconductor lasers, Laser damage threshold, Quantum efficiency, Optical interconnects, Semiconductors, Fiber optic communications, Cladding, Modulation, Fiber lasers, Silicon

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Proceedings Article | 27 February 2013 Paper

Multi-stacked silicon wire waveguides and couplers toward 3D optical interconnects

J. Kang, N. Nishiyama, Y. Atsumi, T. Amemiya, S. Arai

Proceedings Volume 8630, 863008 (2013) https://doi.org/10.1117/12.2009456

KEYWORDS: Waveguides, Protactinium, Wave propagation, Surface roughness, Silicon, Reactive ion etching, Optical circuits, Refractive index, Multilayers, Silica

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Proceedings Article | 11 February 2008 Paper

Length dependences of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process

D. Plumwongrot, Y. Tamura, Y. Nishimoto, M. Kurokawa, T. Okumura, T. Maruyama, N. Nishiyama, S. Arai

Proceedings Volume 6902, 690205 (2008) https://doi.org/10.1117/12.762201

KEYWORDS: Polarization, Anisotropy, Polymethylmethacrylate, Scanning electron microscopy, Quantum wells, Dry etching, Semiconducting wafers, Lithography, Scattering, Luminescence

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Proceedings Article | 29 January 2008 Paper

Reduction of RIE induced damage of GaInAsP/InP DQW lasers fabricated by 2-step growth

D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, S. Arai

Proceedings Volume 6909, 69090C (2008) https://doi.org/10.1117/12.764538

KEYWORDS: Semiconducting wafers, Quantum wells, Reactive ion etching, Plasma, Silica, Photomasks, Wafer-level optics, Electroluminescence, Quantum efficiency, Optical properties

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Proceedings Article | 1 April 2005 Paper

GaInAsP/InP quantum-wire lasers and distributed reflector lasers with wirelike active regions by lithography and regrowth

Shigehisa Arai, Hideki Yagi, Kazuya Ohira, Takeo Maruyama, Shigeo Tamura

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597127

KEYWORDS: Laser damage threshold, Scanning electron microscopy, Quantum efficiency, Interfaces, Waveguides, Reflectivity, Semiconducting wafers, Lithography, Gallium, Semiconductor lasers

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Proceedings Article | 11 July 2002 Paper

Functional optical devices using vertical grooved DFB and DBR structures

Shigehisa Arai, Hyo-Chang Kim, Jeorg Wiedmann

Proceedings Volume 4870, (2002) https://doi.org/10.1117/12.475524

KEYWORDS: Semiconductor lasers, Semiconductors, Etching, Reactive ion etching, Mirrors, Scanning electron microscopy, Reflectivity, Quantum efficiency, Polymers, Optical components

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Recent progress in dry etching technology of GaInAsP/InP compounds enabled realizations of fine vertical groove structures with a high aspect ratio. Since this technology enables the formation of etched mirrors in a wafer batch process, it leads to a low-cost production of not only simple Fabry-Perot lasers but also high performance and functional lasers for optical communications by integrating functional elements such as gratings for wavelength selection and high-reflectivity/low-reflectivity facets, while improvements in the size controllability with precision are still required. In order to keep an initial mask width condition during reactive-ion-etching (RIE) with methane/hydrogen mixture gas, we developed a sequential etching process of the RIE followed by oxygen ashing for relatively short period (for the etching depth of around 240 nm) and repeated the process for required etching depth. The tilt angle of the etched facet was controlled to be less than 1 degree from the normal to the wafer, and the aspect ratio of a narrow groove (140 nm) as high as 17 was obtained. By using this technique we could realize high-reflectivity distributed Bragg reflector (DBR) consisting of semiconductor/polymer pillars and DBR lasers with low threshold current (less than 10 mA for the stripe width of 5 micronmeter) and high differential quantum efficiency of 50 % from the front facet, while the emission spectrum showed a multi-mode operation due to poor wavelength selectivity. A preliminary aging test was carried out at room temperature CW condition, and no degradation was observed after 5,000 hours. With aiming at high performance single-wavelength lasers, we realized a novel distributed feedback (DFB) laser consisting of the first-order corrugations on the sidewalls of the stripe mesa, named ?gVertical Grating (VG),?h as well as a distributed reflector (DR) laser consisting of the VG-DFB structure and above mentioned DBR on the rear side. A stable single-mode operation with a sub-mode suppression ratio of 36dB, thre

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