Prof. Shing-Chung Wang Profile

Prof. Shing-Chung Wang

Professor at National Chiao Tung Univ

SPIE Involvement:

Track Chair | Author | Instructor

Publications (45)

Proceedings Article | 27 February 2015 Paper

Light emission characteristics of nonpolar a-plane GaN-based photonic crystal defect cavities

Tsung Sheng Kao, Tzeng-Tsong Wu, Che-Wei Tsao, Jyun-Hao Lin, Da-wei Lin, Shyh-Jer Huang, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Yan-Kuin Su

Proc. SPIE. 9372, High Contrast Metastructures IV

KEYWORDS: Electron beam lithography, Finite-difference time-domain method, Polarization, Etching, Photonic crystals, Scanning electron microscopy, Gallium nitride, Photomasks, Electrical engineering, Photonic crystal devices

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Proceedings Article | 27 February 2015 Paper

Fabrication of SiC membrane HCG blue reflector using nanoimprint lithography

Ying-Yu Lai, Akihiro Matsutani, Tien-Chang Lu, Shing-Chung Wang, Fumio Koyama

Proc. SPIE. 9372, High Contrast Metastructures IV

KEYWORDS: Reflectors, Optical design, Polarization, Etching, Silicon, Reflectivity, Scanning electron microscopy, Nanoimprint lithography, Vertical cavity surface emitting lasers, Silicon carbide

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Proceedings Article | 27 February 2014 Paper

Numerical analysis on current and optical confinement of III-nitride vertical-cavity surface-emitting lasers

Ying-Yu Lai, Tien-Chang Lu, Tsung-Lin Ho, Shen-Che Huang, Shing-Chung Wang

Proc. SPIE. 9001, Vertical-Cavity Surface-Emitting Lasers XVIII

KEYWORDS: Quantum wells, Light emitting diodes, Optical properties, Resistance, Gallium nitride, Numerical analysis, Aluminum nitride, Vertical cavity surface emitting lasers, Device simulation, Absorption

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Proceedings Article | 19 February 2014 Paper

GaN-based surface-emitting lasers using high-contrast grating

Tien-Chang Lu, Shing-Chung Wang, Tzeng-Tsong Wu, Shu-Hsien Wu, Yu-Cheng Syu

Proc. SPIE. 8995, High Contrast Metastructures III

KEYWORDS: Resonators, Polarization, Scattering, Ions, Reflectivity, Gallium nitride, Distributed Bragg reflectors, Finite element methods, Vertical cavity surface emitting lasers, Neodymium

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Proceedings Article | 15 March 2013 Paper

Fano resonances GaN-based high contrast grating surface-emitting lasers

Tzeng-Tsong Wu, Shu-Hsien Wu, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang

Proc. SPIE. 8633, High Contrast Metastructures II

KEYWORDS: Resonators, Polarization, Scattering, Ions, Reflectivity, Electroluminescence, Gallium nitride, Vertical cavity surface emitting lasers, Neodymium, Electrophoretic light scattering

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Proceedings Article | 29 February 2012 Paper

Exciton-polaritons study in ZnO-based hybrid microcavities

Yu-Pin Lan, Ying-Yu Lai, Si-Wei Huang, Jun-Rong Chen, Yung-Chi Wu, Shiang-Chi Lin, Tien-Chang Lu, Shing-Chung Wang, Wen-Feng Hsieh, Hui Deng

Proc. SPIE. 8255, Physics and Simulation of Optoelectronic Devices XX

KEYWORDS: Oscillators, Polarization, Dispersion, Photons, Reflectivity, Gallium nitride, Excitons, Polaritons, Zinc oxide, Optical microcavities

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Proceedings Article | 28 February 2012 Paper

Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates

Huei-Min Huang, Tien-Chang Lu, Chiao-Yun Chang, Yu-Pin Lan, Shih-Chun Ling, Wei-Wen Chan, Hao-Chung Kuo, Shing-Chung Wang

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Quantum wells, Polarization, Optical testing, Scanning electron microscopy, Raman spectroscopy, Gallium nitride, Phonons, Indium gallium nitride, Epitaxial lateral overgrowth, Nanorods

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Proceedings Article | 7 February 2012 Paper

Recent advances on CW current injection blue VCSELs

Shing-Chung Wang, Tien-Chang Lu, Hao-Chung Kuo

Proc. SPIE. 8276, Vertical-Cavity Surface-Emitting Lasers XVI

KEYWORDS: Dielectrics, Reflectivity, Gallium nitride, Aluminum nitride, Charge-coupled devices, Laser damage threshold, Vertical cavity surface emitting lasers, Indium gallium nitride, Stereolithography

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Proceedings Article | 6 February 2012 Paper

GaN-based microcavity polariton light emitting diodes

Tien-Chang Lu, Ying-Yu Lai, Si-Wei Huang, Jun-Rong Chen, Yung-Chi Wu, Shiang-Chi Lin, Shing-Chung Wang, Yoshihisa Yamamoto

Proc. SPIE. 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI

KEYWORDS: Quantum wells, Light emitting diodes, Dispersion, Image processing, Photons, Electroluminescence, Gallium nitride, Excitons, Polaritons, Optical microcavities

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Proceedings Article | 24 September 2011 Paper

Efficiency droop improvement in GaN-based light emitting diodes by graded-composition electron blocking layer

C. H. Wang, S. P. Chang, W. T. Chang, J. C. Li, H. C. Kuo, T. C. Lu, S. C. Wang

Proc. SPIE. 8123, Eleventh International Conference on Solid State Lighting

KEYWORDS: Electron beam lithography, Light emitting diodes, Polarization, Solid state lighting, Chemical vapor deposition, Gallium nitride, Aluminum, Metalorganic chemical vapor deposition, Electron transport, Internal quantum efficiency

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Proceedings Article | 4 March 2011 Paper

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Shih-Chun Ling, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Wei-Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Proc. SPIE. 7939, Gallium Nitride Materials and Devices VI

KEYWORDS: Light emitting diodes, External quantum efficiency, Polarization, Silicon, Electroluminescence, Transmission electron microscopy, Gallium nitride, Image transmission, Silicon carbide, Metalorganic chemical vapor deposition

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Proceedings Article | 4 March 2011 Paper

Fabrication and lasing characteristics of GaN nanopillars

Ming-Hua Lo, Yuh-Jen Cheng, Hao-Chung Kuo, Shing-Chung Wang

Proc. SPIE. 7939, Gallium Nitride Materials and Devices VI

KEYWORDS: Thin films, Etching, Crystals, Nickel, Gallium nitride, Excitons, Metalorganic chemical vapor deposition, Nanolithography, Plasma, Nanowires

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Proceedings Article | 9 February 2011 Paper

Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions

C. H. Wang, D. W. Lin, C. Chiu, S. P. Chang, Z. Y. Li, J. C. Li, H. C. Kuo, T. C. Lu, S. C. Wang

Proc. SPIE. 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV

KEYWORDS: Surface plasmons, Quantum wells, Light emitting diodes, Polarization, Electrons, Quantum efficiency, Electroluminescence, Transmission electron microscopy, Gallium nitride, Dielectric polarization

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Proceedings Article | 17 March 2010 Paper

Output power enhancement of light-emitting diodes with defect passivation layer

Ming-Hua Lo, Po-Min Tu, Yuh-Jen Cheng, Chao-Hsun Wang, Cheng-Wei Hung, Shih-Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing-Chung Wang, Chun-Yen Chang, Che-Ming Liu

Proc. SPIE. 7602, Gallium Nitride Materials and Devices V

KEYWORDS: Light emitting diodes, Optical lithography, Silica, Etching, Crystals, Scanning electron microscopy, Transmission electron microscopy, Gallium nitride, Photomasks, Chemical mechanical planarization

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Proceedings Article | 11 March 2010 Paper

The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers

S. W. Chen, T. T. Kao, T. T. Wu, T. C. Lu, H. C. Kuo, S. C. Wang

Proc. SPIE. 7602, Gallium Nitride Materials and Devices V

KEYWORDS: Polymethylmethacrylate, Polarization, Photonic crystals, Gallium nitride, Distributed Bragg reflectors, Laser damage threshold, Vertical cavity surface emitting lasers, Laser crystals, Optical pumping, Light wave propagation

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Proceedings Article | 16 February 2009 Paper

Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K

H. C. Kuo, S. W. Chen, T. T. Kao, C. C. Kao, J. R. Chen, T. C. Lu, S. C. Wang

Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV

KEYWORDS: Mirrors, Continuous wave operation, Dielectrics, Reflectivity, Gallium nitride, Laser damage threshold, Vertical cavity surface emitting lasers, Optical pumping, Optical microcavities, Stereolithography

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Proceedings Article | 18 November 2008 Paper

Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD

C. Chiu, C. Chao, M. Lo, Y. Cheng, H. Kuo, P. Yu, T. Lu, S. Wang, K. Lau

Proc. SPIE. 7135, Optoelectronic Materials and Devices III

KEYWORDS: Light emitting diodes, External quantum efficiency, Silica, Nickel, Gallium nitride, Sapphire, Metalorganic chemical vapor deposition, Patterned sapphire substrate, Epitaxial lateral overgrowth, Nanorods

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Proceedings Article | 15 February 2008 Paper

AlGaN/GaN multiple quantum wells grown by atomic layer deposition

M. Lo, Z. Li, J. Chen, T. Ko, T. Lu, H. Kuo, S. Wang

Proc. SPIE. 6894, Gallium Nitride Materials and Devices III

KEYWORDS: Quantum wells, Light emitting diodes, Interfaces, Scanning electron microscopy, Gallium nitride, Sapphire, Atomic layer deposition, Aluminum nitride, Superlattices, Laser sintering

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Proceedings Article | 15 February 2008 Paper

Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates

Jun-Rong Chen, Tien-Chang Lu, Gen-Sheng Huang, Tsung-Shine Ko, Hao-Chung Kuo, Shing-Chung Wang

Proc. SPIE. 6894, Gallium Nitride Materials and Devices III

KEYWORDS: FT-IR spectroscopy, Crystals, Dielectrics, Reflectivity, Infrared spectroscopy, Gallium nitride, Sapphire, Infrared radiation, Aluminum, Phonons

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Proceedings Article | 29 January 2008 Paper

Abnormal PL spectrum in InGaN MQW surface emitting cavity

J. T. Chu, Y.-J. Cheng, H. C. Kuo, T. C. Lu, S. C. Wang

Proc. SPIE. 6908, Vertical-Cavity Surface-Emitting Lasers XII

KEYWORDS: Quantum wells, Continuous wave operation, Dielectrics, Gallium nitride, Sapphire, Vertical cavity surface emitting lasers, Indium gallium nitride, Metalorganic chemical vapor deposition, Helium cadmium lasers, Optical microcavities

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Proceedings Article | 25 September 2007 Paper

Recent progress on GaN-based vertical cavity surface emitting lasers

T. C. Lu, C. C. Kao, G. S. Huang, H. C. Kuo, S. C. Wang

Proc. SPIE. 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV

KEYWORDS: Dielectrics, Reflectivity, Gallium nitride, Sapphire, Vertical cavity surface emitting lasers, Optical pumping, Tantalum, Gallium, Superlattices, Optical microcavities

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Proceedings Article | 18 October 2006 Paper

Fabrication and characteristics of GaN/AlGaN multilayer structure for terahertz quantum-cascade laser

S. Wang, Richard Soref, Greg Sun

Proc. SPIE. 6373, Terahertz Physics, Devices, and Systems

KEYWORDS: FT-IR spectroscopy, Quantum wells, X-ray diffraction, Quantum cascade lasers, Transmission electron microscopy, Gallium nitride, Aluminum, Phonons, Metalorganic chemical vapor deposition, Gallium

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Proceedings Article | 20 April 2006 Paper

Self-assembled Ni nanodot on SiO₂ film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate

Huang-Shen Lin, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang, Gong-Ru Lin

Proc. SPIE. 6195, Nanophotonics

KEYWORDS: Oxides, Etching, Annealing, Luminescence, Nickel, Silicon, Oxygen, Photomasks, Reactive ion etching, Semiconducting wafers

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Proceedings Article | 3 March 2006 Paper

Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition

H. Yao, G. Huang, T. Lu, C. Chen, W. Liang, H. Kuo, S. Wang

Proc. SPIE. 6121, Gallium Nitride Materials and Devices

KEYWORDS: Optical properties, Diffusion, Reflectivity, Atomic force microscopy, Quantum dots, Gallium nitride, Sapphire, Indium gallium nitride, Metalorganic chemical vapor deposition, Temperature metrology

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Proceedings Article | 14 March 2005 Paper

Single mode 1.27-µm InGaAs:Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers

Hao-Chung Kuo, Yi-An Chang, Ya-Hsien Chang, Jung-Tang Chu, Min-Ying Tsai, Shing-Chung Wang

Proc. SPIE. 5737, Vertical-Cavity Surface-Emitting Lasers IX

KEYWORDS: Indium gallium arsenide, Quantum wells, Modulation, Gallium arsenide, Aluminum, Vertical cavity surface emitting lasers, Metalorganic chemical vapor deposition, Antimony, Gallium, Temperature metrology

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Proceedings Article | 7 March 2005 Paper

Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung-Tang Chu, Wen-Deng Liang, Chih-Chiang Kao, Hung-Wen Huang, Chen-Fu Chu, Hao-Chung Kuo, S. Wang

Proc. SPIE. 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX

KEYWORDS: Fabrication, Light emitting diodes, Electrodes, Copper, Semiconductor lasers, Gallium nitride, Sapphire, Thermal effects, Indium gallium nitride, Laser liftoff

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Proceedings Article | 31 January 2005 Paper

Fabrication of high-speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo, Y Chang, Y. Chang, K. Tseng, L. Laih, S. Wang, Hsin-Chieh Yu, Chia-Pin Sung, Hung-Pin Yang

Proc. SPIE. 5624, Semiconductor and Organic Optoelectronic Materials and Devices

KEYWORDS: Oxides, Modulation, Reliability, Resistance, Capacitance, Aluminum, Picosecond phenomena, Vertical cavity surface emitting lasers, Data communications, Gallium

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Proceedings Article | 20 January 2005 Paper

Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers

Yi-An Chang, Hao-Chung Kuo, Ya-Hsien Chang, Shing Chung Wang, Li-Hong Laih

Proc. SPIE. 5628, Semiconductor Lasers and Applications II

KEYWORDS: Quantum wells, Transparency, Gallium arsenide, Indium, Nitrogen, Laser applications, Optical simulations, Gallium, Indium nitride, Temperature metrology

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Proceedings Article | 16 June 2004 Paper

Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. Chang, Hao-chung Kuo, Fang-I Lai, Li-Hong Laih, S. C. Wang

Proc. SPIE. 5364, Vertical-Cavity Surface-Emitting Lasers VIII

KEYWORDS: Eye, Modulation, Gallium arsenide, Indium, Resistance, Capacitance, Aluminum, Vertical cavity surface emitting lasers, Metalorganic chemical vapor deposition, Gallium

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Proceedings Article | 16 June 2004 Paper

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

Fang-I Lai, Ya-Hsien Chang, Li-Hong Laih, Hao-chung Kuo, S. C. Wang

Proc. SPIE. 5364, Vertical-Cavity Surface-Emitting Lasers VIII

KEYWORDS: Gold, Eye, Modulation, Gallium arsenide, Reliability, Near field, Picosecond phenomena, Vertical cavity surface emitting lasers, Semiconducting wafers, Gallium

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Proceedings Article | 2 April 2004 Paper

Fabrication of thin-film transistors on plastic substrates by spin etching and device transfer process

Shuo-Cheng Wang, Chung-Ti Hsu, Ching-Fa Yeh, Jen-Chung Lou

Proc. SPIE. 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III

KEYWORDS: Thin films, Etching, Silicon, Control systems, Transistors, Wet etching, Resistors, Semiconducting wafers, Adhesives, Thin film devices

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Proceedings Article | 17 June 2003 Paper

Temperature-dependent near-field emission profiles of oxide-confined vertical-cavity surface-emitting lasers

Tien-chang Lu, Wen-jun Shieu, Ya-hsien Chang, L. Laih, S. Wang

Proc. SPIE. 4994, Vertical-Cavity Surface-Emitting Lasers VII

KEYWORDS: Oxides, Gallium arsenide, Semiconductor lasers, Near field, Thermal effects, Aluminum, Vertical cavity surface emitting lasers, Hole burning spectroscopy, Gallium, Temperature metrology

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SPIE Journal Paper | 1 August 2002

Difference frequency mixing of periodically poled lithium niobate optical parametric oscillator output waves in GaSe crystal

S. Haidar, Y. Hsu, Chen Chang, S. Wang, Hiromasa Ito

OE Vol. 41 Issue 08

KEYWORDS: Optical parametric oscillators, Crystals, Gases, Nonlinear crystals, Laser crystals, Lithium niobate, Mid-IR, Mirrors, Polarization, Phase matching

Proceedings Article | 13 March 2002 Paper

Dynamics of Laguerre Gaussian TEM*0,1 mode in a solid state laser

Yu-Pin Lan, S. Wang, Yu-Fen Chen

Proc. SPIE. 4630, Solid State Lasers XI

KEYWORDS: Solid state lasers

Proceedings Article | 13 March 2002 Paper

High-power diode-end-pumped passively mode-locked Nd:YVO4 laser with a relaxed saturable Bragg reflector

Sheng-Wei Tsai, Yu-Pin Lan, S. Wang, Kai-Feng Huang, Yu-Fen Chen

Proc. SPIE. 4630, Solid State Lasers XI

KEYWORDS: Reflectors, Mirrors, Continuous wave operation, Mode locking, High power lasers, Solid state lasers, Semiconductor lasers, Picosecond phenomena, Neodymium lasers, Absorption

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Proceedings Article | 14 April 2000 Paper

Design of efficient high-power diode-end-pumped TEMoo Nd:YVO4 laser

Yu-Fen Chen, C. Liao, Y. Lan, S. Wang

Proc. SPIE. 3929, Solid State Lasers IX

KEYWORDS: Q switching, High power lasers, Crystals, Nd:YAG lasers, Semiconductor lasers, Laser crystals, Neodymium, Neodymium lasers, Pulsed laser operation, Absorption

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Proceedings Article | 9 November 1999 Paper

Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy

Huimei Fang, Y. K. Wang, Ray-yen Tsai, Chen Fu Chu, S. Wang

Proc. SPIE. 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures

KEYWORDS: Statistical analysis, Optical properties, Ultraviolet radiation, Luminescence, Crystals, X-ray diffraction, Atomic force microscopy, Gallium nitride, Atomic force microscope, Vapor phase epitaxy

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Proceedings Article | 2 May 1997 Paper

Analytical model for output optimization of fiber-coupled laser-diode end-pumped lasers

Yung Fu Chen, S. Wang, Ting-Ming Huang, C. Kao, Chi Wang

Proc. SPIE. 2989, Modeling and Simulation of Higher-Power Laser Systems IV

KEYWORDS: Diffraction, Monochromatic aberrations, Resonators, Fiber lasers, Semiconductor lasers, Thermal effects, Diodes, Optimization (mathematics), Fiber coupled lasers, Absorption

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Proceedings Article | 30 September 1996 Paper

Output optimization for pumping solid state lasers with fiber-coupled laser diodes

Yung Fu Chen, S. Wang, C. Kao, K. Lin, Ting-Ming Huang, W. Huang

Proc. SPIE. 2889, High-Power Lasers: Solid State, Gas, Excimer, and Other Advanced Lasers

KEYWORDS: Laser development, Nd:YAG lasers, Fiber lasers, Semiconductor lasers, Laser resonators, Diodes, Laser damage threshold, Optimization (mathematics), Modes of laser operation, Fiber coupled lasers

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Proceedings Article | 2 June 1994 Paper

Effect of active-region size on the high-speed modulation of vertical-cavity surface-emitting lasers with lateral injection

Thaddeus Dziura, Y. Yang, Mr. Fernandez, S. Wang

Proc. SPIE. 2147, Vertical-Cavity Surface-Emitting Laser Arrays

KEYWORDS: Mirrors, Data modeling, Modulation, Ions, Diffusion, Resistance, Zinc, Capacitance, Vertical cavity surface emitting lasers, Instrument modeling

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Proceedings Article | 1 June 1994 Paper

Wafer scale testing of vertical cavity surface-emitting laser arrays

Thaddeus Dziura, S. Wang

Proc. SPIE. 2148, Laser Diode Technology and Applications VI

KEYWORDS: Wafer-level optics, Modulation, Data storage, Laser development, Near field, Field effect transistors, Photonic integrated circuits, Vertical cavity surface emitting lasers, Semiconducting wafers, Wafer testing

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Proceedings Article | 2 December 1992 Paper

Modulation characteristics of vertical-cavity surface-emitting lasers

S. Wang, Thaddeus Dziura, Y. Yang

Proc. SPIE. 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III

KEYWORDS: Modulation, Gallium arsenide, Diffusion, Laser development, Resistance, Zinc, Distortion, Laser damage threshold, Vertical cavity surface emitting lasers, Semiconducting wafers

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Proceedings Article | 1 July 1991 Paper

Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser

Y. Yang, Thaddeus Dziura, S. Wang, Mr. Fernandez, G. Du, Shyh Wang

Proc. SPIE. 1418, Laser Diode Technology and Applications III

KEYWORDS: Mirrors, Quantum wells, Continuous wave operation, Gallium arsenide, Diffusion, Laser applications, Resistance, Zinc, Semiconductor lasers, Laser damage threshold

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Proceedings Article | 1 July 1990 Paper

Single-mode high-power diode laser array for optical communication

S. Wang, Richard Stone

Proc. SPIE. 1218, Free-Space Laser Communication Technologies II

KEYWORDS: Beam splitters, Fabry–Perot interferometers, Modulation, High power lasers, Laser applications, Semiconductor lasers, Optical communications, Diodes, Laser optics, Free space optical communications

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Proceedings Article | 1 June 1990 Paper

High-modulation-rate potential for surface emitter laser diode arrays

Thaddeus Dziura, Y. Yang, S. Wang

Proc. SPIE. 1217, Optoelectronic Signal Processing for Phased-Array Antennas II

KEYWORDS: Mirrors, Liquid phase epitaxy, Modulation, Semiconductor lasers, Optoelectronics, Signal processing, Antennas, Photonic integrated circuits, Vertical cavity surface emitting lasers, Semiconducting wafers

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Showing 5 of 45 publications

Proceedings Volume Editor (12)

SPIE Conference Volume | 17 May 2001

Testing, Reliability, and Applications of Optoelectronic Devices

SPIE Conference Volume | 17 May 2001

Testing, Reliability, and Applications of Optoelectronic Devices

SPIE Conference Volume | 29 March 2000

Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V

SPIE Conference Volume | 29 March 2000

Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V

SPIE Conference Volume | 14 April 1999

Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV

Showing 5 of 12 publications

Conference Committee Involvement (12)

Testing and Reliability of Optelectronic Devices

26 January 2001 | San Jose, CA, United States

Testing, Reliability, and Applications of Optoelectronic Devices

24 January 2001 | San Jose, CA, United States

Testing, Packaging, and Reliability of Semiconductors Lasers V

26 January 2000 | San Jose, CA, United States

Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V

25 January 2000 | San Jose, CA, United States

Testing, Packaging, Reliability, and Applications of SemiconductorLasers IV

28 January 1999 | San Jose, CA, United States

Showing 5 of 12 Conference Committees

Course Instructor

SC053: Testing and Reliability of Semiconductor Lasers

This course covers device physics, testing, lifetime and reliability evaluations of semiconductor lasers. The features of semiconductor lasers that are relevant to the device performance and reliability are briefly reviewed. Various laser characterization methods are described. Techniques for evaluation of laser lifetime and factors affecting laser reliability are discussed. Recent developments in semiconductor lasers are presented in the context of their impact on testing and reliability.

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