The continuous evolution of LSI design rules has created an increased demand for the use of KrF and ArF
phase-shift photomasks (EPSMs). One of the critical issues in the use of those photomasks, especially ArF half-tone
photomasks, has been the generation of optical hazes known as (NH4)2SO4. The other critical issue has been a relatively
large phase shift of those ArF and KrF photomasks caused by so-called haze-free mask cleaning..
In the present study we used an SPM integrated clean (as a reference) consisting of heated SPM, diluted SC-1 and
heated UPW (widely known for rinsing), and a haze-free integrated mask clean consisting of Ozonated-water with a
simultaneous 222nm Excimer UV irradiation, diluted SC-1 and heated UPW. We found that both Ozonated-water with a
simultaneous 222nm Excimer UV irradiation and the diluted SC-1 (the components of the haze-free integrated clean)
caused a sizable phase shift during the mask clean. We also found that the other component of the haze-free integrated
clean, the heated UPW developed a relatively large phase shift in those photomasks. We have confirmed that the more
we repeat the use of the 172nm Excimer UV light irradiation treatment before the clean, the less (more improved) phase
shift has been realized in the haze-free clean. We found that the haze-free integrated clean also developed the CD shifts
of the above photomasks and that those CD shifts could be recovered (reduced) drastically by the use of the 172nm
Excimer UV light irradiation before the clean.
To eliminate ammonium sulfate haze caused from sulfuric acid residue on the mask surface, we have been working for resist stripping and cleaning without the use of sulfuric acid process. This paper describes sulfate-free photomask cleaning technology by improving ozone cleaning process.
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