We revisit self-difference frequency generation –– nonlinear mixing of the lasing field induced by stimulated emission with its pump source in a laser gain medium –– by employing transition-metal doped chalcogenides along with the standard birefringent phase-matching techniques for mid-infrared applications. The use of an a-cut Cr:CdSe crystal under the noncritical PM condition has significantly improved the conversion efficiency compared to the previous results obtained in a Cr:ZnSe slab with Fresnel phase-matching. To generalize the self-mixing design, the phase-matching conditions of solid solutions CdSxSe1-x doped with Cr2+ and Fe2+ ions are characterized in the mid-infrared spectral range.
We demonstrated a nanosecond pulsed Cr:ZnSe laser with both wavelength tunability and burst pulse operation in the mid-infrared (IR) region. The burst pulse operation of the Cr:ZnSe laser was achieved using a pulse-on-demand Tm:YAG laser as a pump source. The number of pulse shots and the repetition rate in a packet were controlled. A tuning range of 2.32 to 2.56 μm was also achieved using a birefringent filter. Our results show that the pulse-on-demand Tm:YAG laser is an attractive pump source for the burst-pulse-operated Cr:ZnSe laser, which paves the way for various mid-IR laser applications.
We have demonstrated a pulse-on-demand operation in the mid-infrared region using a Cr:ZnSe laser pumped with a Qswitched Tm:YAG laser. The pulse-on-demand operation was accomplished by controlling the pump pulse train. In the burst pulse mode operation, we could control the number of pulses, the pulse interval, and each pulse height in a packet. In addition, the wavelength of the Cr:ZnSe laser can be tuned in the region of 2.3–2.6 μm. The total pulse energy of a single packet was a maximum of 0.2 mJ at 2.5 μm.
We have demonstrated pulse-on-demand operation of a 2 μm AO Q-switched Tm: YAG laser. Burst pulse operation, the number of pulses in a packet, and pulse interval can be controlled by RF power modulation and pump control. The burst packet included up to 10 pulses at a pulse interval of 138 s. The pulse energy and pulse width of a single pulse in the packet were ~0.7 mJ and 70–150 ns, respectively. In addition, we have demonstrated that the envelope of the burst pulse train could be designed as required.
Highly reliable DUV light sources are required for semiconductor applications such as a photomask inspection. The
mask inspection for the advanced devices requires the UV lightning wavelength beyond 200 nm. By use of dual fiber
lasers as fundamental light sources and the multi-wavelength conversion we have constructed a light source of 198nm
with more than 100 mW. The first laser is Yb doped fiber laser with the wavelength of 1064 nm; the second is Er doped
fiber laser with 1560 nm. To obtain the robustness and to simplify the configuration, the fundamental lights are run in
the pulsed operation and all wavelength conversions are made in single-pass scheme. The PRFs of more than 2 MHz
are chosen as an alternative of a CW light source; such a high PRF light is equivalent to CW light for inspection
cameras. The light source is operated described as follows. Automatic weekly maintenance within an hour is done if it is
required; automatic monthly maintenance within 4 hours is done on fixed date per month; manufacturer's maintenance is
done every 6 month. Now this 198 nm light sources are equipped in the leading edge photomask inspection machines.
The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength consistency becomes more important by the introduction of phase shift mask such as Tri-tone mask and alternating phase shift mask. Therefore, mask inspection system, whose inspection light wavelength is 199nm, has been developed. This system has transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2hours per mask. The experimental results show expected advantages for Die-to-Die and Die-to-Database inspection compared with the system using 257nm inspection optics. Shorter wavelength effect makes transmission inspection sensitivity increase, and realizes 40nm size particle inspection. As for the phase shift mask, the difference of gray value between the area with phase defect and without phase defect was clear relatively. In this paper, specifications and design, experimental results are described.
A novel high-resolution mask inspection platform using DUV wavelength has been developed. This platform is designed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography. In this paper, newly developed optical system and its performance are reported. The system is operated at wavelength of 198.5nm, which wavelength is nearly equal to 193nm-ArF laser exposure tool. Some defect image data and defect inspection sensitivity due to simulation-base die-to-die (D/D) inspection are shown on standard programmed defect test mask. As an initial state D/D inspection performance, 20-60 nm defects are certified. System capabilities for 65nm node inspection and beyond are also discussed.
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