This study presents advancements in the synthesis and application of Bi2Se3, a topological van der Waals crystal, for terahertz (THz) detection. High-quality β-Bi2Se3 crystals were synthesized using the Selenium Vapor-Induced Supersaturated Solution Method (SVI-SSM), ensuring stoichiometric integrity. Heterostructures of Bi2Se3 were constructed using hot transfer methods, leading to the fabrication of a rectenna THz detector. Utilizing a 0.95-THz injection-seeded THz parametric generator (is-TPG) as the light source for pulsed-continuous wave (CW) THz waves, THz detection experiments were conducted. The results demonstrated a fast response time of 200 ps and a sensitivity of 40 mV/W with the THz detector, which was maintained even under zero bias conditions. These findings lay the foundation for developing passive THz detection systems with minimal energy consufmption, holding significant promise for advancing THz communication technology.
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