Mr. Shu-Ping Fang Profile

Shu-Ping Fang

Principal Engineer at United Microelectronics Corp

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Publications (5)

Proceedings Article | 17 May 2005 Paper

Optimization of multi-step development scheme to improve the critical dimension uniformity

Te-shao Hsu, Benjamin Szu-Min Lin, Hsien-an Chang, Shu-Ping Fang, Kuei-Chun Hung

Proceedings Volume 5755, (2005) https://doi.org/10.1117/12.599321

KEYWORDS: Deep ultraviolet, Critical dimension metrology, Annealing, Oxides, Double patterning technology, Integrated circuits, Chemical reactions, Process control, Astatine, Microelectronics

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Tight control of critical dimensions (CDs) of integrated circuit (IC) is required to achieve desired circuit performances, and getting more and more important as the IC CD shrinks. Phenomena and solutions of inter-field and intra-field CD errors have been widely studied for years. One of the well-known intra-field CD errors is so called the developer micro-loading effect due to the different pattern density loadings across the exposure field, in the other words, the more different the pattern density is, the more CD errors it would be expected. Some of the circuit layouts, e.g. thick gate oxide layers of dual gate oxide processes, and gate layers of embedded memory products, have this kind of across field pattern density concerns because of the different pattern density areas. Some researches showed that eliminating the by-products during the development process could reduce the developer micro-loading effect. With a multi-step development process (Puddle-Static Development-Dry-Puddle-Static Development-Rinse/Dry), the by-products can be removed and achieve a better CD uniformity. In this paper, optimization of the first puddle time in the multi-step development process is found to be the most critical to achieve uniform intra-field CDs. The purpose of the first puddle step is not only to remove the by-products but also to control the influence of the by-products to achieve uniform intra-field CDs. Once most of the by-products generated during the whole development process were carried away by the first puddle step, the optimum static Dev. time is needed to obtain the minimum intra-field CD difference. However, different photo-resists with different chemical formulations are expected to have identical optimum puddle time due to different chemical reactions of each by-product species, e.g. i-line PRs vs DUV PRs, or annealing type DUV PRs vs acetel type DUV PRs. These comparisons will be explained in details in this paper. Finally, the source of the by-products during the developer process was also identified to verify the validation of the multi-step developer process.

Proceedings Article | 12 May 2005 Paper

Optimization of multi-pole aperture for via patterning of 90 nm logic devices by KrF lithography

Hsiang Yang, Kuei-Chun Hung, Benjamin Lin, Paul Chiang, Shu Fang, Hsien-an Chang

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598707

KEYWORDS: Lithography, Photomasks, Lithographic illumination, Optical lithography, Logic devices, Optical resolution, Photoresist materials, Manufacturing, Printing, Airborne remote sensing

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Proceedings Article | 28 May 2004 Paper

Extension of ArF lithography for poly gate patterning of 65nm generation and beyond

Kuei-Chun Hung, Shu-Hao Hsu, Benjamin Lin, I. Hsuing Huang, Shu-Ping Fang

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534641

KEYWORDS: 193nm lithography, Lithography, Line edge roughness, Optical lithography, Chromium, Coherence (optics), Image processing, Resolution enhancement technologies, Photoresist materials, Optical proximity correction

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Proceedings Article | 24 May 2004 Paper

Capability of spectroscopic ellipsometry-based profile metrology for detecting the profile excursion of polysilicon gate

Chih-Chung Huang, Steven Fu, Bo-Jau Tsau, Ted Dziura, Benjamin Lin, Mike Slessor, Jay Chen, Mike Yeh, Shu-Ping Fang, Regina Freed

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536269

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Metrology, Etching, Spectroscopic ellipsometry, Cadmium, Scanning electron microscopy, Transistors, Atomic force microscopy, Single crystal X-ray diffraction

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Proceedings Article | 29 April 2004 Paper

Improvement of 90nm KrF Cu process window by minimizing via deformation caused by low-frequency resonance of scanner projection lens

Kuei-Chun Hung, Benjamin Lin, Shu-Ping Fang

Proceedings Volume 5378, (2004) https://doi.org/10.1117/12.535046

KEYWORDS: Lithography, Scanners, Back end of line, Copper, Optical proximity correction, Semiconducting wafers, Manufacturing, Photomasks, Inspection, Critical dimension metrology

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