The sensitive parameters affecting the dark current characteristics are further studied by using InAs/GaSb type II superlattice (T2SL) pBpp structure long wavelength Infrared photodetectors.Generation of recombination (G-R), surface leakage current and tunneling current are the main components of dark current. Using pBpp structure can suppress them effectively, thereby decreasing dark current. Based on the k ∙ p method, the band structure of InAs/GaSb T2SL and InAs/AlSb T2SL can be obtained by solving the 8-band k ∙ p model. We have calculated different doping levels of pBpp detector and different layer thicknesses of pBpp detector. For pBpp device, we consider the dark current for different contact layer doping and different absorber layer doping. We also study the influence of different contact layer thicknesses and different absorber layer thicknesses on dark current. The dark current of pBpp detector is dominant by tunneling current at low temperature, and diffusion is the main limiting mechanism in dark current at high temperature, for barrier layer inhibits generation-recombination contribution. Eventually, the dark current of a pBpp structure has been calculated for versus voltage at 77 K.
Dilute bismide is a novel class of III-V semiconductor compound possessing a number of attractive physical properties such as a large band-gap bowing effect, a large spin-orbit split band and a less temperature sensitive band-gap etc. In this talk, I will present electrically pumped near infrared GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy with room-temperature lasing up to 1.14 m. Epitaxial growth is carefully optimized to ensure high bismuth incorporation and high optical quality at the same time. The LDs reveal an output power over 120 mW under pulsed excitation at 300 K and can operate under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm-1. The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77-350 K, much smaller than 0.35-0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.
We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy.
The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as
well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation
dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate
pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.
We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular
beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm2 per
quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1
mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for
broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide
lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB
bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C
has been demonstrated.
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