Mr. Shuyu Ni Profile

Shuyu Ni

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Proceedings Article | 19 November 2019 Paper

AlInGaAs MQWs photonic integration device with directional coupler for multifunction of light emission/detection in infrared range

Xin Li, Shuyu Ni, Yan Jiang, Jialei Yuan, Wei Wang, Yongjin Wang

Proceedings Volume 11184, 111840N (2019) https://doi.org/10.1117/12.2536396

KEYWORDS: Directional couplers, Infrared radiation, Photonic devices, Semiconducting wafers, Infrared detectors, Infrared photography, Photons, Beam propagation method, Etching, Dry etching

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We propose an AlInGaAs MQWs photonics integration device with directional coupler for multifunction of light emission/detection in infrared range, and realize the device on an InP based wafer. Two identical AlInGaAs MQWdiodes, working as light emission/detection device independently, are fabricated by two-step etching process on one wafer and connected by a directional coupler. The photonic integration device is prepared by two dry etching for III-V materials and electron beam evaporation for metal electrode. The MQW-diode for emission loaded with positive bias voltage operates in transmit mode, and emits light in infrared range. The MQW-diode for detection loaded with negative bias voltage operates in receive mode, and absorbs infrared photons transmitted by directional coupler connecting the two MQW-diodes. The absorbed infrared photons leads to a change in internal electric voltage across the p-n junction of the MQW-diode for detection. The opto-electrical characterization including current–voltage and electroluminescence spectrum are conducted. The coupling performance between the two MQW-diodes is also experimentally characterized by analyzing the induced photocurrent of MQW-diode for detection. We perform finite element simulation by beam propagation method (BPM) to evaluate the light coupling performance for the directional coupler. An on-chip communication test is also conducted to demonstrate the potential application of photonics integration device for transmission optical signal in infrared range.

Proceedings Article | 5 November 2018 Paper

Freestanding GaN-based integrated photonics chip with ultra-micro LED and straight waveguide for visible light communication

Xin Li, Yan Jiang, Shuyu Ni, Yongjin Wang

Proceedings Volume 10814, 108140N (2018) https://doi.org/10.1117/12.2500372

KEYWORDS: Waveguides, Light emitting diodes, Visible radiation, Integrated photonics, Silicon, Etching, Modulation, Data transmission, Electroluminescence, Electrodes

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We propose a freestanding GaN-based integrated photonics chip with ultra-micro LED and straight waveguide for visible light communication on GaN-on-silicon platform realized by double-side process. The ultra-micro LED and waveguide is prepared by dry etching for GaN, electron beam evaporation for metal electrode, plasma enhanced chemical vapor deposition (PECVD) and wet etching for SiO2. The silicon substrate under chip is totally removed by deep inductive coupled plasma (ICP) etching to realize the freestanding membrane. The ultra-micro LED emits visible light signal in blue range. The visible light signal is coupled into straight waveguide connected to ultra-micro LED, and transmitted to tip of waveguide end. The communication performance of chip is significantly influenced by the active area of LED. Ultra-micro LED could well confine the visible light signal in waveguide, and achieve greater modulation bandwidth. The technical difficulty of chip with ultra-micro LED is to make p-electrode pad on active area with ultramicro size. We realize p-electrode pad with relatively large size on ultra-micro LED with SiO2 isolation layer. Light transmission performance of chip verse current is quantitatively analyzed by measuring intensity of visible light transmitted to waveguide tip. Most of the light emitted from ultra-micro LED is well confined in straight waveguide. The light intensity of waveguide tip is strongly modulated by the geometric parameters of straight waveguide. Freespace visible light communication (VLC) test with 120Mbps random binary sequence is carried out to achieve high speed data transmission. This study provides a potential approach for GaN-based integrated photonics chip as ultramicro light source and passive optical device in visible range.

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