The distribution of bound state energies of self-assembled quantum dots in quantum dot infrared photodetector structure is addressed using its temperature-dependent dark currents. The temperature-dependent dark currents have been fitted by the modified Arrhenius equation, which includes the distribution of activation energies. The fitting allows us to find the standard deviation and the average activation energy. It is found that the peak of photocurrent spectra, which correspond to intersubband transition energy, is coincided with the average of the activation energies. This was never achieved with the conventional Arrhenius equation.
It is shown that the potential barrier introduced by p delta doping in n-i-n diode not only reduce the dark current but also enhance the responsivity. This was applied to both QWIP and QDIP. The QWIP is made of In0.3Ga0.7As/GaAs multiple quantum wells and the QDIP is made of p type self assembled InAs/GaAs quantum dots. The dark currents are reduced by an order of magnitude at 77K and the detectivities are increased. Thermal activation energies of PL peaks from various QD structures are investigated, which include the effects of barrier height , QD size and barrier materials.
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