Dr. Sören Heinze Profile

Dr. Sören Heinze

at Otto-von-Guericke-Univ Magdeburg

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 20 February 2007 Paper

Metalorganic vapor phase epitaxy of ZnO: toward p-type conductivity

J. Christen, H. Witte, A. Diez, S. Tiefenau, F. Bertram, A. Krost, S. Heinze, J. Bläsing, A. Dadgar, T. Hempel, A. Krtschil

Proceedings Volume 6474, 647406 (2007) https://doi.org/10.1117/12.715018

KEYWORDS: Zinc oxide, Arsenic, Annealing, Doping, Oxygen, Nitrogen, Zinc, Atomic force microscopy, Crystals, Particle filters

Read Abstract +

The promising II-VI-semiconductor ZnO has achieved strong interest in research in the past years. Especially, epitaxial growth by metal organic vapor phase epitaxy (MOVPE) is a matter of particular interest due to the large scalability of MOVPE for commercial mass production and its proven high layer quality for other compound semiconductors. In the past years tremendous advance has been made in the field of epitaxial growth. However, due to the lack of epiready ZnO substrates, so far mostly heteroepitaxial growth with a multistep growth process was applied to obtain good surface morphology and until now not all of the physical properties of such multilayers are fully understood. In this paper we present recent results of the electrical behavior of such multiple undoped ZnO layers. Despite numerous efforts one big challenge is the p-type doping of ZnO. Here we present our results to doping experiments with arsenic, nitrogen and as a new approach simultaneous dual doping of nitrogen and arsenic. Homoepitaxial growth offers a great potential for ZnO due to some advantages as the absence of thermal and lattice mismatch and potentially low dislocation density. We present experiments on the thermal treatment of commercial ZnO bulk crystals, which is necessary for subsequent homo- MOVPE.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years