Mr. Stanley G. E. Wissmar Profile

Stanley G. E. Wissmar

Co-founder at SenseM AB

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Author

Publications (5)

Proceedings Article | 21 May 2011 Paper

Toward 17µm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

Per Ericsson, Andreas Fischer, Fredrik Forsberg, Niclas Roxhed, Björn Samel, Susan Savage, Göran Stemme, Stanley Wissmar, Olof Öberg, Frank Niklaus

Proceedings Volume 8012, 801216 (2011) https://doi.org/10.1117/12.883827

KEYWORDS: Bolometers, Absorption, Quantum wells, Semiconducting wafers, Silicon, Sensors, Resistance, Infrared radiation, Reflectors, Wafer bonding

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Proceedings Article | 27 October 2010 Paper

Design and evaluation of a quantum-well-based resistive far-infrared bolometer

Per Ericsson, Linda Höglund, Björn Samel, Susan Savage, Stanley Wissmar, Olof Öberg, Jan-Erik Källhammer, Dick Eriksson

Proceedings Volume 7834, 78340Q (2010) https://doi.org/10.1117/12.865036

KEYWORDS: Bolometers, Absorption, Silicon, Quantum wells, Germanium, Semiconducting wafers, Resistance, Sensors, Temperature metrology, Far infrared

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Proceedings Article | 14 May 2010 Paper

Low-cost uncooled microbolometers for thermal imaging

Niclas Roxhed, Frank Niklaus, Andreas Fischer, Fredrik Forsberg, Linda Höglund, Per Ericsson, Björn Samel, Stanley Wissmar, Anders Elfving, Tor Ivar Simonsen, Kaiying Wang, Nils Hoivik

Proceedings Volume 7726, 772611 (2010) https://doi.org/10.1117/12.855752

KEYWORDS: Bolometers, Semiconducting wafers, Wafer bonding, Germanium, Tin, Infrared bolometers, Copper, Readout integrated circuits, Microelectromechanical systems, Quantum wells

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Cost efficient integration technologies and materials for manufacturing of uncooled infrared bolometer focal plane arrays (FPA) are presented. The technology platform enables 320x240 pixel resolution with a pitch down to 20 μm and very low NETD. A heterogeneous 3D MEMS integration technology called SOIC (Silicon-On-Integrated-Circuit) is used to combine high performance Si/SiGe bolometers with state-of-the-art electronic read-out-integrated-circuits. The SOIC integration process consists of: (a) Separate fabrication of the CMOS wafer and the MEMS wafer. (b) Adhesive wafer bonding. (c) Sacrificial removal of the MEMS handle wafer. (d) Via-hole etching. (e) Via formation and MEMS device definition. (f) Sacrificial etching of the polymer adhesive. We will present an optimized process flow that only contains dry etch processes for the critical process steps. Thus, extremely small, sub-micrometer feature sizes and vias can be implemented for the infrared bolometer arrays. The Si/SiGe thermistor is grown epitaxially, forming a mono-crystalline multi layer structure. The temperature coefficient of resistance (TCR) is primarily controlled by the concentration of Ge present in the strained SiGe layers. TCR values of more than 3%/K can be achieved with a low signal-to-noise ratio due to the mono-crystalline nature of the material. In addition to its excellent electrical properties, the thermistor material is thermally stable up to temperatures above 600 °C, thus enabling the novel integration and packaging techniques described in this paper. Vacuum sealing at the wafer level reduces the overall costs compared to encapsulation after die singulation. Wafer bonding is performed using a Cu-Sn based metallic bonding process followed by getter activation at ≥350 °C achieving a pressure in the 0.001 mbar range. After assembling, the final metal phases are stable and fully compatible with hightemperature processes. Hermeticity over the product lifetime is accomplished by well-controlled electro-deposition of metal layers, optimized bonding parameters and a suitable bond frame design.

Proceedings Article | 14 May 2007 Paper

Low-cost far infrared bolometer camera for automotive use

Christian Vieider, Stanley Wissmar, Per Ericsson, Urban Halldin, Frank Niklaus, Göran Stemme, Jan-Erik Källhammer, Håkan Pettersson, Dick Eriksson, Henrik Jakobsen, Terje Kvisterøy, John Franks, Jan VanNylen, Hans Vercammen, Annick VanHulsel

Proceedings Volume 6542, 65421L (2007) https://doi.org/10.1117/12.721272

KEYWORDS: Semiconducting wafers, Bolometers, Sensors, Readout integrated circuits, Wafer bonding, Germanium, Cameras, Packaging, Quantum wells, Far infrared

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Proceedings Article | 29 September 2006 Paper

High signal-to-noise ratio quantum well bolometer materials

Stanley Wissmar, Linda Höglund, Jan Andersson, Christian Vieider, Susan Savage, Per Ericsson

Proceedings Volume 6401, 64010N (2006) https://doi.org/10.1117/12.689874

KEYWORDS: Quantum wells, Doping, Bolometers, Aluminum, Germanium, Silicon, Resistance, Crystals, Signal to noise ratio, Amorphous silicon

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