Dr. Stéfan Landis Profile

Dr. Stéfan Landis

at CEA-LETI

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 16 August 2019 Presentation

Presentation

Performance validation of Mapper’s FLX-1200 (Conference Presentation)

Marco Wieland, Jonathan Pradelles, Stéfan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido De Boer, Pieter Brandt, Remco J. Jager, Stijn W. H. Steenbrink

Proceedings Volume 10958, 109580I (2019) https://doi.org/10.1117/12.2514920

KEYWORDS: Wafer-level optics, Semiconducting wafers, Critical dimension metrology, Electron beams, Optical alignment, Maskless lithography, Switching, Electron beam lithography, Standards development, Lithography

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Mapper has installed its first product, the FLX–1200, at CEA-Leti in Grenoble (France). This is a maskless lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. The FLX-1200, containing 65,000 parallel electron beams, has a 1 wph throughput at 300 mm wafers and is capable of patterning any resolution and any different type of structure all the way down to 28 nm node patterns. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion system using standard NVSM marks. Mapper Lithography and CEA-Leti are collaborating to develop turnkey solution for specific applications. In figure 1 the basic operation principle of the Mapper technology is shown. The electron optics have no central crossovers making them intrinsically insensitive to Coulomb forces (electron repulsion). The electron optics are modular and much cheaper than high-NA DUV optics, and can be replaced or upgraded in the field. The wafer exposure happens one column of fields at a time and always in the same direction. There is no need to meander. The focus and leveling is performed during stage fly-back to reduce metrology overhead. Each column of fields is aligned separately, with dedicated alignment targets. Figure 1, Basic operation of the Mapper technology. In figure 2 the way the beams are distributed over the electron optics slit is shown. The writing strategy is as follows: - There are up to 5 slits, staggered in X direction for reasons of wafer coverage. The approach is roughly analogous to an inkjet printer - Each slit area consists of 204 x 13 individual groups of beamlets, organized in a hexagonal array. - All beamlets are simultaneously horizontally deflected over a range of 2µm while the wafer is scanned vertically. - Each group comprises 49 individual beamlets (7x7). Each of the 49 beamlets can independently be switched on and off during exposure. - Each beamlet results in a Gaussian spot on the wafer with 25 nm FW50 diameter (10.6nm 1). - Total beamlet count will therefore equal 5 x 204x13 x 49 = 649,740. In the FLX-1200 and FLX-1300 the central 10% are used (one half slit area): 65,000 A more detailed description of the principles of operation is given in [2]. Figure 2,Distribution of the beams over the electron optics slit. The focus of presentation will be the reporting of the performance achieved of the tool installed at CEA-Leti during endurance runs in full tool configuration. This includes status of: - Exposure throughput - Achieved resolution and CD uniformity - Stitching performance - Matched Machine Overlay - Tool availability and uptime Also the different application areas for such a maskless system are discussed. In figure 3 a preview of a CD uniformity measurement result is shown. On a 300 mm wafer fields of 5mm x 5mm have been exposed containing 60nm dense lines and spaces. The main source of CD variation is caused by differences between the groups of beamlets. To measure this variation we have taken 824 SEM images, each taken of a pattern written by a different beam group. The result is shown in figure 3. The variation is 8nm 3s, and follows a Gaussian distribution of 6nm 3s. Figure 3, Distribution of 824 CD measurements results on 60nm dense lines and spaces

Proceedings Article | 19 September 2018 Paper

Paper

Performance validation of Mapper FLX-1200

Jonathan Pradelles, Yoann Blancquaert, Stefan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Marco Wieland

Proceedings Volume 10775, 1077507 (2018) https://doi.org/10.1117/12.2324054

KEYWORDS: Semiconducting wafers, Overlay metrology, Prototyping, Optical scanning, Scanning electron microscopy, Lithography, Line width roughness, Optical alignment, Electron beams, Silicon

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Proceedings Article | 19 September 2018 Paper

Paper

Feasibility of monitoring a multiple e-beam tool using scatterometry and machine learning: stitching error detection

Guido Rademaker, Yoann Blancquaert, Thibault Labbaye, Lucie Mourier, Nivea Figueiro, Francisco Sanchez, Roy Koret, Jonathan Pradelles, Stéfan Landis, Stéphane Rey, Ronny Haupt, Barak Bringoltz, Michael Shifrin, Daniel Kandel, Avron Ger, Matthew Sendelbach, Shay Wolfling, Laurent Pain

Proceedings Volume 10775, 1077508 (2018) https://doi.org/10.1117/12.2326595

KEYWORDS: Machine learning, Scatterometry, Semiconducting wafers, Lithography, Metrology, Channel projecting optics, Wafer-level optics, Reflectance spectroscopy, Inverse optics, Electron beam direct write lithography, Maskless lithography

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Multiple electron beam direct write lithography is an emerging technology promising to address new markets, such as truly unique chips for security applications. The tool under consideration, the Mapper FLX-1200, exposes long 2.2 μm-wide zones called stripes by groups of 49 beams. The critical dimensions inside and the registration errors between the stripes, called stitching, are controlled by internal tool metrology. Additionally, there is great need for on-wafer metrology of critical dimension and stitching to monitor Mapper tool performance and validate the internal metrology. Optical Critical Dimension (OCD) metrology is a workhorse technique for various semiconductor manufacturing tools, such as deposition, etching, chemical-mechanical polishing and lithography machines. Previous works have shown the feasibility to measure the critical dimension of non-uniform targets by introducing an effective CD and shown that the non-uniformity can be quantified by a machine learning approach. This paper seeks to extend the previous work and presents a preliminary feasibility study to monitor stitching errors by measuring on a scatterometry tool with multiple optical channels. A wafer with OCD targets that mimic the various lithographic errors typical to the Mapper technology was created by variable shaped beam (VSB) e-beam lithography. The lithography process has been carefully tuned to minimize optically active systematic errors such as critical dimension gradients. The OCD targets contain horizontal and vertical gratings with a pitch of 100 nm and a nominal CD of 50 nm, and contain various stitching error types such as displacement in X, Y and diagonal gratings. Sensitivity to all stitching types has been shown. The DX targets showed non-linearity with respect to error size and typically were a factor of 3 less sensitive than the promising performance of DY targets. A similar performance difference has seen in nominally identical diagonal gratings exposed with vertical and horizontal lines, suggesting that OCD metrology for DX cannot be fully characterized due to lithography errors in gratings with vertical lines.

Proceedings Article | 22 March 2018 Presentation + Paper

Presentation + Paper

Overlay and stitching metrology for massively parallel electron-beam lithography

Guido Rademaker, Jonathan Pradelles, Stéfan Landis, Stephane Rey, Anna Golotsvan, Anat Marchelli, Tal Itzkovich, Tetyana Shapoval, Ronny Haupt, Erwin Slot, Guido de Boer, Dhara Dave, Marco Wieland, Laurent Pain

Proceedings Volume 10585, 105850U (2018) https://doi.org/10.1117/12.2297535

KEYWORDS: Overlay metrology, Metrology, Electron beam lithography, Lenses, Distance measurement, Electron beams, Raster graphics, Semiconducting wafers, Time metrology, Process control

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Proceedings Article | 19 March 2018 Presentation + Paper

Presentation + Paper

Performance validation of Mapper's FLX-1200

Marco Wieland, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Yoann Blancquaert, Stefan Landis, Laurent Pain, Jonathan Pradelles, Guido Rademaker, Isabelle Servin

Proceedings Volume 10584, 105840G (2018) https://doi.org/10.1117/12.2300816

KEYWORDS: Semiconducting wafers, Line width roughness, Optical alignment, Overlay metrology, Electron beams, Electron beam lithography

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Proceedings Article | 19 March 2018 Presentation + Paper

Presentation + Paper

Process development of a maskless N40 via level for security application with multi-beam lithography

Isabelle Servin, Patricia Pimenta-Barros, Arthur Bernadac, Jonathan Pradelles, Allan Germain, Yoann Blancquaert, Philippe Essomba, Stefan Landis, Gerard ten Berge, Marco Wieland, Philippe Brun

Proceedings Volume 10584, 1058411 (2018) https://doi.org/10.1117/12.2297162

KEYWORDS: Etching, Semiconducting wafers, Lithography, Scanning electron microscopy, System on a chip, Optical alignment, Electron beam lithography, Metals, Back end of line, Copper

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Proceedings Article | 27 April 2017 Presentation

Presentation

New 3D structuring process for non-integrated circuit related technologies (Conference Presentation)

Lamia Nouri, Nicolas Possémé, Stéfan Landis, Frédéric Milesi, Frédéric-Xavier Gaillard

Proceedings Volume 10144, 101440C (2017) https://doi.org/10.1117/12.2258603

KEYWORDS: Ions, Wet etching, Electron beam lithography, Silicon, Ion implantation, Lithography, Ion beam lithography, FT-IR spectroscopy, Microelectronics, Integrated circuits

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Fabrication processes that microelectronic developed for Integrated circuit (IC) technologies for decades, do not meet the new emerging structuration’s requirements, in particular non-IC related technologies one, such as MEMS/NEMS, Micro-Fluidics, photovoltaics, lenses. Actually complex 3D structuration requires complex lithography patterning approaches such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization. It is now challenging to find cheaper and easiest technique to achieve 3D structures.

In this work, we propose a straightforward process to realize 3D structuration, intended for silicon based materials (Si, SiN, SiOCH). This structuration technique is based on nano-imprint lithography (NIL), ion implantation and selective wet etching. In a first step a pattern is performed by lithography on a substrate, then ion implantation is realized through a resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one.

In this paper, we will first present results achieved with simple 2D line array pattern processed either on Silicon or SiOCH samples. This step have been carried out to demonstrate the feasibility of this new structuration process. SEM pictures reveals that “infinite” selectivity between the implanted areas versus the non-implanted one could be achieved. We will show that a key combination between the type of implanted ion species and wet etching chemistries is required to obtain such results.

The mechanisms understanding involved during both implantation and wet etching processes will also be presented through fine characterizations with Photoluminescence, Raman and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry and Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples. Finally the benefit of this new patterning approach will be presented on 3D patterns structures.

Proceedings Article | 21 March 2017 Paper

Paper

Rules-based correction strategies setup on sub-micrometer line and space patterns for 200mm wafer scale SmartNIL process within an integration process flow

H. Teyssedre, S. Landis, P. Brianceau, M. Mayr, C. Thanner, M. Laure, W. Zorbach, M. Eibelhuber, L. Pain, M. Chouiki, M. Wimplinger

Proceedings Volume 10144, 101440V (2017) https://doi.org/10.1117/12.2260002

KEYWORDS: Semiconducting wafers, Nanoimprint lithography, Manufacturing, Critical dimension metrology, Lithography, High volume manufacturing, Calibration, Standards development, Etching, Silicon, Metrology, Scanning electron microscopy

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Proceedings Article | 20 October 2016 Paper

Paper

Critical dimension uniformity characterization of nanoimprinted trenches for high volume manufacturing qualification

H. Teyssedre, S. Landis, C. Thanner, V. Schauer, M. Laure, W. Zorbach, L. Pain, S. Bos, M. Eibelhuber, M. Wimplinger

Proceedings Volume 10032, 100320M (2016) https://doi.org/10.1117/12.2250194

KEYWORDS: High volume manufacturing, Nanoimprint lithography, Semiconducting wafers, Critical dimension metrology, Silicon, Ultraviolet radiation, Polymers, Manufacturing, Metrology, Scanning electron microscopy

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Proceedings Article | 10 May 2012 Paper

Paper

Metallic colour filtering arrays manufactured by nanoimprint lithography

S. Landis, P. Brianceau, N. Chaix, Y. Désières, V. Reboud, M. Argoud

Proceedings Volume 8428, 842807 (2012) https://doi.org/10.1117/12.922086

KEYWORDS: Manufacturing, Etching, Silicon, Semiconducting wafers, Scanning electron microscopy, Nanoimprint lithography, Optical filters, Aluminum, Optics manufacturing, Metals

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Proceedings Article | 24 March 2009 Paper

Paper

3D-AFM booster for mass-production nanoimprint lithography

A.-L. Foucher, J. Foucher, S. Landis

Proceedings Volume 7272, 72722J (2009) https://doi.org/10.1117/12.811839

KEYWORDS: Nanoimprint lithography, Silicon, Lithography, Bridges, Silicon carbide, Capillaries, Molecular bridges, Metrology, Semiconducting wafers, Plasma etching

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Proceedings Article | 20 March 2008 Paper

Paper

Sub-wavelength optical diffraction and photoacoustic metrologies for the characterisation of nanoimprinted structures

T. Kehoe, J. Bryner, V. Reboud, N. Kehagias, S. Landis, C. Gourgon, J. Vollmann, J. Dual, C. Sotomayor Torres

Proceedings Volume 6921, 69210F (2008) https://doi.org/10.1117/12.772545

KEYWORDS: Diffraction, Diffraction gratings, Polymers, Photoacoustic spectroscopy, Silicon, Nanoimprint lithography, Polymethylmethacrylate, Metrology, Aluminum, Semiconducting wafers

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Proceedings Article | 3 May 2007 Paper

Paper

Investigation of capillary bridges growth in NIL process

Stefan Landis, Tanguy Leveder, Nicolas Chaix, Cecile Gourgon

Proceedings Volume 6533, 65330O (2007) https://doi.org/10.1117/12.736914

KEYWORDS: Bridges, Capillaries, Printing, Polymers, Nanoimprint lithography, Photoresist processing, Molecular bridges, Lithography, Etching, Semiconducting wafers

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Proceedings Article | 15 March 2007 Paper

Paper

Demolding strategy to improve the hot embossing throughput

Tanguy Leveder, Stefan Landis, Laurent Davoust, Sebastien Soulan, Nicolas Chaix

Proceedings Volume 6517, 65170N (2007) https://doi.org/10.1117/12.711151

KEYWORDS: Annealing, Temperature metrology, Nanoimprint lithography, Lithography, Heat treatments, Printing, Semiconducting wafers, Glasses, Polymers, Optical lithography

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Proceedings Article | 24 March 2006 Paper

Paper

Nano-imprint of sub-100nm dots and lines feature on 8-inch wafer: influence of layout design

S. Landis, Tanguy Leveder, N. Chaix, C. Perret, Cécile Gourgon

Proceedings Volume 6151, 61512L (2006) https://doi.org/10.1117/12.659810

KEYWORDS: Polymers, Printing, Bridges, Scanning electron microscopy, Semiconducting wafers, Nanoimprint lithography, Critical dimension metrology, Silicon, Electron beam lithography, Polymer thin films

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Proceedings Article | 23 February 2005 Paper

Paper

Nanoimprint lithography: full wafer replication of nanometer features

Rainer Pelzer, Cecile Gourgon, Stefan Landis, Paul Kettner

Proceedings Volume 5650, (2005) https://doi.org/10.1117/12.582435

KEYWORDS: Polymers, Semiconducting wafers, Nanoimprint lithography, Ultraviolet radiation, Polymethylmethacrylate, Lithography, Glasses, Silicon, Microelectronics, Optical alignment

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Showing 5 of 16 publications

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