Prof. Stephan W. Koch
Group Member at Philipps Univ Marburg
SPIE Involvement:
Conference Program Committee | Author | Instructor
Publications (116)

Proceedings Article | 4 March 2019 Paper
Proc. SPIE. 10901, Vertical External Cavity Surface Emitting Lasers (VECSELs) IX
KEYWORDS: Semiconductors, Fabry–Perot interferometers, Quantum wells, Polarization, Scattering, Numerical simulations, Semiconductor lasers, Terahertz radiation, Electron holes

Proceedings Article | 27 February 2019 Presentation + Paper
Proc. SPIE. 10920, 2D Photonic Materials and Devices II
KEYWORDS: Semiconductors, Ultrafast phenomena, Polarization, Scattering, Semiconductor materials, Light scattering, Laser scattering, Carrier dynamics, Group III-V semiconductors, Absorption

Proceedings Article | 8 May 2018 Paper
Proc. SPIE. 10638, Ultrafast Bandgap Photonics III
KEYWORDS: Long wavelength infrared, Mid-IR, Dispersion, Physics, Wave propagation, Ionization, Picosecond phenomena, Atmospheric propagation, Atmospheric modeling, Atmospheric optics

Proceedings Article | 15 February 2018 Paper
Proc. SPIE. 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII
KEYWORDS: Semiconductors, Quantum wells, Mode locking, Electromagnetism, Pulsed laser operation

Proceedings Article | 15 February 2018 Paper
Proc. SPIE. 10515, Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII
KEYWORDS: Semiconductors, Ultrafast phenomena, Refractive index, Quantum wells, Mode locking, Silicon, Coating, Reflectivity, Structural design, Pulsed laser operation

Showing 5 of 116 publications
Conference Committee Involvement (20)
Physics and Simulation of Optoelectronic Devices XXIX
6 March 2021 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXVIII
3 February 2020 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXVII
5 February 2019 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXVI
29 January 2018 | San Francisco, California, United States
Physics and Simulation of Optoelectronic Devices XXV
30 January 2017 | San Francisco, California, United States
Showing 5 of 20 Conference Committees
Course Instructor
SC457: Modeling of Semiconductor Laser Gain Structures
This course surveys techniques for modeling semiconductor lasers. It begins with a tutorial discussion of the physical mechanisms contributing to semiconductor laser gain. The theoretical framework which incorporates these mechanisms into a unified laser theory is outlined. Approximations (such as quasiequilibrium, free-carrier, rate equation, effective relaxation rate) and their validity will be elucidated. Also included is an overview of bandstructure calculation methods. The second part of this course addresses the implementation of the above theory (with and without approximations) to study specific laser systems, such as VCSELs, where detailed knowledge of the gain spectrum is useful for optimized design. The process of incorporating the theory into a computer code will be discussed. We will describe the treatment of bulk, quantum well and quantum dot structures and the differences in their optical properties. Also, we will show how the numerical model allows us to analyze experimental data and optimize laser performance in material systems ranging from near UV through the visible, and all the way to the infrared where many important telecommunication applications exist.
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