Broadband sub-millimeter wave technology has received significant attention for potential applications in security, medical, and military imaging. Despite theoretical advantages of reduced size, weight, and power compared to current millimeter wave systems, sub-millimeter wave systems have been hampered by a fundamental lack of amplification with sufficient gain and noise figure properties. We report a broadband pixel operating from 300 to 340 GHz, biased off a single 2 V power supply. Over this frequency range, the amplifiers provide > 40 dB gain and <8 dB noise figure, representing the current state-of-art performance capabilities. This pixel is enabled by revolutionary enhancements to indium phosphide (InP) high electron mobility transistor technology, based on a sub-50 nm gate and indium arsenide composite channel with a projected maximum oscillation frequency fmax>1.0 THz. The first sub-millimeter wave-based images using active amplification are demonstrated as part of the Joint Improvised Explosive Device Defeat Organization Longe Range Personnel Imager Program. This development and demonstration may bring to life future sub-millimeter-wave and THz applications such as solutions to brownout problems, ultra-high bandwidth satellite communication cross-links, and future planetary exploration missions.
Broadband sub-millimeter wave technology has received significant attention for potential applications in security,
medical, and military imaging. Despite theoretical advantages of reduced size, weight, and power compared to current
millimeter-wave systems, sub-millimeter-wave systems are hampered by a fundamental lack of amplification with
sufficient gain and noise figure properties. We report on the development of a sub-millimeter wave amplifier module as
part of a broadband pixel operating from 300-350 GHz, biased off of a single 2V power supply. Over this frequency
range, > 38 dB gain and < 8.3 dB noise figure are obtained and represent the current state-of-art performance
capabilities. The prototype pixel chain consists of two WR3 waveguide amplifier blocks, and a horn antenna and diode
detector. The low noise amplifier Sub-Millimeter-wave Monolithic Integrated Circuit (SMMIC) was originally
developed under the DARPA SWIFT and THz Electronics programs and is based on sub 50 nm Indium Arsenide
Composite Channel (IACC) transistor technology with a projected maximum oscillation frequency fmax > 1.0 THz. This
development and demonstration may bring to life future sub-millimeter-wave and THz applications such as solutions to
brown-out problems, ultra-high bandwidth satellite communication cross-links, and future planetary exploration
missions.
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