Dr. Stewart Smith Profile

Dr. Stewart Smith

Research Fellow at Univ of Edinburgh

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Publications (8)

Proceedings Article | 2 April 2010 Paper

Electrical effects of corner Serif OPC

M. McCallum, A. Tsiamis, S. Smith, A. Hourd, J. T. Stevenson, A. Walton

Proceedings Volume 7638, 76383M (2010) https://doi.org/10.1117/12.849490

KEYWORDS: Optical proximity correction, Resistance, Metals, Photomasks, Semiconducting wafers, Inspection, Wafer-level optics, Aluminum, Physics, Optical lithography

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Proceedings Article | 23 September 2009 Paper

Practical application of OPC in electrical circuits

M. McCallum, A. Tsiamis, S. Smith, A. Hourd, J. T. M. Stevenson, A. Walton

Proceedings Volume 7488, 74883B (2009) https://doi.org/10.1117/12.830053

KEYWORDS: Optical proximity correction, Resistance, Semiconducting wafers, Photomasks, Inspection, Wafer-level optics, Oxides, Scanning electron microscopy, Physics, Resistors

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Proceedings Article | 30 October 2007 Paper

Photomask applications of traceable atomic force microscope dimensional metrology at NIST

Ronald Dixson, Ndubuisi Orji, James Potzick, Joseph Fu, Richard Allen, Michael Cresswell, Stewart Smith, Anthony Walton, Andreas Tsiamis

Proceedings Volume 6730, 67303D (2007) https://doi.org/10.1117/12.746755

KEYWORDS: Metrology, Calibration, Atomic force microscopy, Photomasks, Standards development, Phase shifts, Dimensional metrology, Atomic force microscope, Resistance, Microelectronics

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The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. Three major instruments are being used for traceable measurements. The first is a custom in-house metrology AFM, called the calibrated AFM (C-AFM), the second is the first generation of commercially available critical dimension AFM (CD-AFM), and the third is a current generation CD-AFM at SEMATECH - for which NIST has established the calibration and uncertainties. All of these instruments have useful applications in photomask metrology. Linewidth reference metrology is an important application of CD-AFM. We have performed a preliminary comparison of linewidths measured by CD-AFM and by electrical resistance metrology on a binary mask. For the ten selected test structures with on-mask linewidths between 350 nm and 600 nm, most of the observed differences were less than 5 nm, and all of them were less than 10 nm. The offsets were often within the estimated uncertainties of the AFM measurements, without accounting for the effect of linewidth roughness or the uncertainties of electrical measurements. The most recent release of the NIST photomask standard - which is Standard Reference Material (SRM) 2059 - was also supported by CD-AFM reference measurements. We review the recent advances in AFM linewidth metrology that will reduce the uncertainty of AFM measurements on this and future generations of the NIST photomask standard. The NIST C-AFM has displacement metrology for all three axes traceable to the 633 nm wavelength of the iodine-stabilized He-Ne laser. One of the important applications of the C-AFM is step height metrology, which has some relevance to phase shift calibration. In the current generation of the system, the approximate level of relative standard uncertainty for step height measurements at the 100 nm scale is 0.1 %. We discuss the monitor history of a 290 nm step height, originally measured on the C-AFM with a 1.9 nm (k = 2) expanded uncertainty, and describe advances that bring the step height uncertainty of recent measurements to an estimated 0.6 nm (k = 2). Based on this work, we expect to be able to reduce the topographic component of phase uncertainty in alternating aperture phase shift masks (AAPSM) by a factor of three compared to current calibrations based on earlier generation step height references.

Proceedings Article | 3 May 2007 Paper

Electrical test structures for the characterisation of optical proximity correction

Andreas Tsiamis, Stewart Smith, Martin McCallum, Andrew Hourd, J. Tom Stevenson, Anthony Walton

Proceedings Volume 6533, 65330M (2007) https://doi.org/10.1117/12.737112

KEYWORDS: Optical proximity correction, Resistance, Photomasks, Metrology, Structural design, Critical dimension metrology, Wafer-level optics, Lithography, Semiconducting wafers, Resistors

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Proceedings Article | 6 December 2004 Paper

Cost-effective overlay and CD metrology on phase-shifting masks

Martin McCallum, Stewart Smith, Andrew Hourd, Anthony Walton, J. Tom Stevenson

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.568529

KEYWORDS: Critical dimension metrology, Phase shifts, Overlay metrology, Capacitance, Quartz, Etching, Electrodes, Scanning electron microscopy, Phase shifting, Atomic force microscopy

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Proceedings Article | 10 November 2003 Paper

SPICE modeling of ferroelectric liquid crystal on silicon microdisplays

Stewart Smith, Anthony Walton, Ian Underwood, Christophe Miremont, David Vass, Will Hossack, Martin Birch, Andrew Macartney, Robert Nicol

Proceedings Volume 5181, (2003) https://doi.org/10.1117/12.509466

KEYWORDS: Electro optical modeling, Liquid crystals, Data modeling, Switching, Liquid crystal on silicon, Ferroelectric LCDs, Silicon, Resistors, Electro optics, LCDs

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Proceedings Article | 27 December 2002 Paper

Electrical dimension characterization of binary and alternating aperture phase-shifting masks

Martin McCallum, Stewart Smith, Alan Lissimore, Anthony Walton, J. Tom Stevenson

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467430

KEYWORDS: Scanning electron microscopy, Photomasks, Binary data, Resistance, Critical dimension metrology, Phase shifts, Semiconducting wafers, Bridges, Etching, Chromium

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Proceedings Article | 10 April 1995 Paper

Intelligent CMOS imaging

Peter Denyer, David Renshaw, Stewart Smith

Proceedings Volume 2415, (1995) https://doi.org/10.1117/12.206525

KEYWORDS: CMOS sensors, Sensors, Cameras, Charge-coupled devices, CMOS cameras, Intelligent sensors, Imaging systems, CCD image sensors, Video, Amplifiers

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Showing 5 of 8 publications

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