KEYWORDS: 3D metrology, Sensors, Atomic force microscopy, 3D image processing, Scanning electron microscopy, Algorithm development, Photomasks, Metrology, Transmission electron microscopy, Time metrology
In next generation lithography (NGL) for the 1x nm node and beyond, the three dimensional (3D) shape measurements such as side wall angle (SWA) and height of feature on photomask become more critical for the process control. Until today, AFM (Atomic Force Microscope), X-SEM (cross-section Scanning Electron Microscope) and TEM (Transmission Electron Microscope) tools are normally used for 3D measurements, however, these techniques require time-consuming preparation and observation. And both X-SEM and TEM are destructive measurement techniques. This paper presents a technology for quick and non-destructive 3D shape analysis using multi-channel detector MVM-SEM (Multi Vision Metrology SEM), and also reports its accuracy and precision.
KEYWORDS: Atomic force microscopy, 3D image processing, 3D metrology, Sensors, Semiconducting wafers, Metrology, Reticles, Line edge roughness, Scanning electron microscopy
A new SEM technology is becoming available that allows image-based 3D profile metrology of nanoscale features. Using patented multi-channel detector technology, this system can acquire information of surface concave and convex features, and sidewall angle (SWA) and height of profiles, quickly and non-destructively for nanoscale structures such as fin field-effect transistors (FinFETs), using electron beam technology with its well-known long probe lifetime, stability and small probe size. Here we evaluate this new technology and demonstrate its applicability to contemporary advanced structures such as FinFETs, including not only CD, but also profile, SWA, top corner rounding (TCR) and bottom corner rounding (BCR).
Thin film hardmasks with 10nm or less are used in double patterning techniques to generate fine
patterns for 32nm-node and beyond. Using a conventional Mask CDSEM for ultra accurate
measurement of patterns on these thin film hardmasks is difficult due to weakness of the edge
profiles generated by a scanning electron beam. Additionally, the tones of a SEM image can be
reversed due to a charging phenomenon, which causes false recognition of lines and spaces. This
paper addresses ultra accurate measurement of thin film hardmasks using a new measurement
algorithm that is applied to profiles obtained from multiple detectors.
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