The coherent backlight unit (C-BLU) using a diffractive optical element (DOE) for full-color flat-panel holographic display is proposed. The coherent backlight unit is composed of two diffractive optical elements (DOEs) that are imprinted on the same glass substrate. The illumination area of the backlight is 250 mm x 130 mm and the thickness is 2.2 mm, which is slim compared to other conventional coherent backlight units for holographic display systems. In experiments, the total efficiency is measured as 0.8% at red (638 nm), 3.9% at green (520nm), and 3.4% of blue (473 nm). As a result, we could get the 10 inch full color holographic display with 4k resolution.
Chil-Sung Choi, Alexander Morozov, Alexander Koshelev, Sergey Dubynin, German Dubinin, Sung-Hoon Lee, Jae-Seung Chung, Geeyoung Sung, Jungkwuen An, Hoon Song, Juwon Seo, Hojung Kim, Wontaek Seo, Andrey Putilin, Sergey Kopenkin, Yuriy Borodin, Sun Il Kim, Hong-Seok Lee, Joon-Yong Park, U-in Chung, Sungwoo Hwang
We propose slim coherent backlight unit for a mobile holographic display. This backlight unit consists of glass substrate for waveguide and two surface gratings produced by two-beam interference. The area of backlight illumination is 150 by 85 mm, and the thickness is 0.7 mm, which is thin compared to other conventional coherent backlight units. This backlight unit exhibits a total efficiency of 0.1%, preserving the collimation and a uniformity of 80% over the whole area. The proposed slim coherent backlight can be applied to a mobile holographic display.
E-beam lithography simulation is one of the effective tools for understanding the complex e-beam lithography process. In-house E-beam Lithography Simulator, ELIS, has been developed in order to analyze the mask CD errors. ELIS adopts the Monte Carlo method to accurately describe the electron scattering and energy deposition on the resist, and fits this result with more than two Gaussians to convolute with pattern shape efficiently and rapidly. This simulator provides the function of the proximity effect correction (PEC) and fogging effect correction. ELIS, moreover, can simulate the post exposure bake step (PEB), therefore, latent image and resist profile is given for chemically amplified resists (CAR). From the exposure simulation with ELIS, the amoung of CD variation regarding different density patterns in various conditions can be predicted. The simulation results are matched with experimented values within 5% error. Even though PEC corrects perfectly, the non-zero mean-to-target (MTT) induces the CD error. The CD errors with dose modulation and GHOST along with the MTT variation have been studied with ELIS. Also, we show these errors increasing after applying fogging effect correction.
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