Dr. Sung-Hyuk Kim Profile

Dr. Sung-Hyuk Kim

at SAMSUNG Electronics Co Ltd

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Author

Publications (14)

Proceedings Article | 14 May 2007 Paper

Study of mask structure for 45-nm node based on manufacturability and lithographic performance

Jong Gul Doh, Cheol Hong Park, Yong Seung Moon, Bo Hye Kim, Sung Won Kwon, Sun Young Choi, Sung Hyuck Kim, Seong Yoon Kim, Byung Gook Kim, Sang Gyun Woo, Han Ku Cho

Proceedings Volume 6607, 66071U (2007) https://doi.org/10.1117/12.728977

KEYWORDS: Photomasks, Binary data, Chromium, Etching, Absorbance, Lithography, Manufacturing, Semiconducting wafers, Optical simulations, Electron beam lithography

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Proceedings Article | 27 March 2007 Paper

The choice of mask in consideration of polarization effects at high-NA system

Sung-Hyuck Kim, Soon-Ho Kim, Sang-Yong Yu, Yong-Hoon Kim, Jeung-Woo Lee, Han-Ku Cho

Proceedings Volume 6520, 65204R (2007) https://doi.org/10.1117/12.711318

KEYWORDS: Photomasks, Polarization, Binary data, Optical lithography, Resolution enhancement technologies, Immersion lithography, Image enhancement, Lithography, Image quality, Phase shifts

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Proceedings Article | 22 March 2007 Paper

32-nm pattern collapse modeling with radial distance and rinse speed

Jong-Sun Kim, Wook Chang, Seoung-Wook Park, Hye-Keun Oh, Suk-Joo Lee, Sung-Hyuk Kim

Proceedings Volume 6519, 65193Y (2007) https://doi.org/10.1117/12.712220

KEYWORDS: Liquids, Semiconducting wafers, Mathematical modeling, Capillaries, Lithography, Electronics, Chemically amplified resists, Optical lithography, Applied physics, Semiconductors

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Proceedings Article | 20 October 2006 Paper

Haze detection and haze-induced process latitude variation for low-k1 193 nm lithography

Sung-Jin Kim, Jin-Baek Park, Sung-Hyuck Kim, Hye-Young Kang, Young-Min Kang, Seung-Wook Park, Ilsin An, Hye-Keun Oh

Proceedings Volume 6349, 63492T (2006) https://doi.org/10.1117/12.685941

KEYWORDS: Air contamination, Photomasks, Critical dimension metrology, Transmittance, Spectroscopic ellipsometry, Lithography, Electroluminescence, Ellipsometry, Semiconductors, Pellicles

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Proceedings Article | 15 March 2006 Paper

Optimization of chromeless phase mask by comparing scattering bars with zebra patterns

Hye-Young Kang, Ji-Eun Lee, Eun-A Kwak, Eun-Jin Kim, Seung-Wook Park, Sung-Hyuck Kim, Dong-Soo Shin, HeeJun Jeong, Hye-Keun Oh

Proceedings Volume 6154, 615429 (2006) https://doi.org/10.1117/12.656145

KEYWORDS: Photomasks, Scattering, Optical proximity correction, Electroluminescence, Resolution enhancement technologies, Phase shifts, Lithography, Chromium, Lithographic illumination, Binary data

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Resolution enhancement technology (RET) refer to techniques that extend the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Off-axis illumination (OAI) and phase shift mask (PSM) are essentially accompanied with optical proximity correction (OPC) for most devices nowadays. In general, these three techniques do not work in isolation and the most aggressive mainstream lithography approaches use combinations of all RETs. In fact, OAI and PSM are essentially useless for typical chip-manufacturing applications unless accompanied by OPC. For low k₁ imaging, strong OAI such as Quasar or dipole illumination types is the best. We used dipole illumination in this study. By using strong OAI, the amplitude of the 0^th order is decreased and the amplitude of the 1^st order is increased. Chromeless phase lithography (CPL) is one of PSM technologies and CPL mask is the possible solution for small geometry with low mask error enhancement factor (MEEF). CPL uses only 180 degrees phase-shifter on transparent glass without chromium film to define light-shielding region, destructive interference between light transmitted through the 0 degree and 180 degrees regions produces dark images. To obtain the best resolution, proper OPC is required with CPL. While the most common and straightforward application of OPC is to simply move absorber edges on the mask by giving simple mask bias, the interesting and important additional technique is the use of scattering bars. Also, we can use zebra patterns for the transmission control. Mask intensity transmission changes can impact the image quality. Zebra patterns are formed by adding chromium transverse features. The transmission will be controlled by the zebra pattern density. Technology node with ArF source is studied and the mask optimization is found to be a critical. And the linewidth of scattering bars, transmission (using zebra feature) are varied at line and space (L/S) patterns. We used 65 nm node 5 L/S and 45 nm node isolated line pattern. In order to optimize the zebra pattern density, we need to control the line width and pitch of the zebra patterns. For dense line and isolated line, the use of scattering bars and zebra patterns affected target critical dimension. We found out the better process window at dense 65 nm node by comparing the use of scattering bars with zebra patterns. Likewise, we optimized the isolated 45 nm node.

Proceedings Article | 9 November 2005 Paper

Reticle haze measurement by spectroscopic elipsometry

Young-Hoon Kim, Seong-Jin Kim, Jin-Back Park, Mi-Lim Jung, Sung-Hyuck Kim, Seung-Wook Park, Jai-Sun Kyoung, Il-Sin An, Hye-Keun Oh

Proceedings Volume 5992, 59924L (2005) https://doi.org/10.1117/12.632375

KEYWORDS: Air contamination, Reticles, Photomasks, Ellipsometry, Transmittance, Inspection, Spectroscopic ellipsometry, Spectroscopy, Semiconductors, Atomic force microscopy

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Proceedings Article | 8 November 2005 Paper

Mask error enhancement factor variation with pattern density

Hye-Young Kang, Sung-Hyuck Kim, Chang-Ho Lee, Hye-Keun Oh

Proceedings Volume 5992, 599233 (2005) https://doi.org/10.1117/12.632408

KEYWORDS: Photomasks, Critical dimension metrology, Diffusion, Semiconducting wafers, Scattering, Optical proximity correction, Electronics, Chemically amplified resists, Applied physics, Semiconductors

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Proceedings Article | 28 June 2005 Paper

The application of phase grating to CLM technology for the sub-65nm node optical lithography

Gi-Sung Yoon, Sung-Hyuck Kim, Ji-Soong Park, Sun-Young Choi, Chan-Uk Jeon, In-Kyun Shin, Sung-Woon Choi, Woo-Sung Han

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617201

KEYWORDS: Photomasks, Optical lithography, Camera shutters, Semiconducting wafers, Optical proximity correction, Manufacturing, Chromium, Nanoimprint lithography, Lithography, Wafer-level optics

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Proceedings Article | 28 May 2004 Paper

Study of Cr patch validity for ArF CPL mask and its fabrication

Chang-Hwan Kim, Sung-Hyuk Kim, Myoung-Soo Lee, Ji-Soong Park, In-Gyun Shin, Sung-Woon Choi, Hee-Sun Yoon, Woo-Sung Han

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535976

KEYWORDS: Chromium, Photomasks, Resolution enhancement technologies, Optical alignment, Laser processing, Semiconducting wafers, Phase shifts, Lithography, Logic devices, Control systems

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Proceedings Article | 17 December 2003 Paper

Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography

Ji-Soong Park, Sung-Hyuck Kim, In-Kyun Shin, Sung-Woon Choi, Jung-Min Sohn, Jae-Han Lee, Hye-soo Shin, Thomas Laidig, Douglas Van Den Broeke, J. Fung Chen

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518014

KEYWORDS: Photomasks, Scattering, Semiconducting wafers, Neodymium, Lithography, Optical proximity correction, Camera shutters, Optics manufacturing, Wafer-level optics, Phase shifting

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Proceedings Article | 26 June 2003 Paper

Fast topography simulation using differential method

Sonny Zinn, Sung-Hyuck Kim, Sung-Woon Choi, Jung-Min Sohn

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485355

KEYWORDS: Finite-difference time-domain method, Computer simulations, Photomasks, Maxwell's equations, Printing, Quartz, Binary data, Etching, Interfaces, Refractive index

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Proceedings Article | 26 June 2003 Paper

Feasibility evaluations of alternating phase-shift mask for imaging sub-80-nm feature with KrF

Myung-Ah Kang, Sung-Hyuck Kim, In-Kyun Shin, Seong-Woon Choi, Jung-Min Sohn

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485430

KEYWORDS: Chromium, Photomasks, Optical proximity correction, Lithography, Lithographic illumination, Critical dimension metrology, Manufacturing, Phase shifts, Resolution enhancement technologies, Semiconducting wafers

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Proceedings Article | 27 December 2002 Paper

Application of Cr-less mask technology for sub-100-nm gate with single exposure

Sung-Hyuck Kim, Dong-Hoon Chung, Ji-Soong Park, In-Kyun Shin, Seong-woon Choi, Jung-Min Sohn, Jae-Han Lee, Hye-Soo Shin, J. Fung Chen, Douglas Van Den Broeke

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468097

KEYWORDS: Photomasks, Camera shutters, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Chromium, Lithography, Wafer-level optics, Phase shifts, Printing

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Proceedings Article | 11 March 2002 Paper

Optical performances under the conditions of various geometrical structures and phase defects in phase edge PSM

Tae Moon Jeong, In-Gyun Shin, Dong-Hoon Chung, Sung-Hyuck Kim, Hyoungdo Kim, Seong-Woon Choi, Woo-Sung Han, Jung-Min Sohn

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458361

KEYWORDS: Critical dimension metrology, Photomasks, Etching, Phase shifts, Optical lithography, Chromium, Manufacturing, Optics manufacturing, Semiconducting wafers, Wet etching

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Showing 5 of 14 publications

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