Mr. Sungmin Huh Profile

Sungmin Huh

Senior Engineer at SAMSUNG Electronics Co Ltd

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 28 June 2013 Paper

Defect printability studies at SEMATECH

Il-Yong Jang, Ranganath Teki, Vibhu Jindal, Frank Goodwin, Masaki Satake, Ying Li, Danping Peng, Sungmin Huh, Seong-Sue Kim

Proceedings Volume 8701, 870111 (2013) https://doi.org/10.1117/12.2028069

KEYWORDS: Semiconducting wafers, Double positive medium, Photomasks, Critical dimension metrology, Data modeling, Calibration, Extreme ultraviolet, Extreme ultraviolet lithography, Printing, Inspection

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Proceedings Article | 1 April 2013 Paper

Defect printability comparing actinic printing with advanced simulation for EUV masks

Il-Yong Jang, Ranganath Teki, Vibhu Jindal, Frank Goodwin, Masaki Satake, Ying Li, Danping Peng, Sungmin Huh, Seong-Sue Kim

Proceedings Volume 8679, 86790H (2013) https://doi.org/10.1117/12.2011493

KEYWORDS: Semiconducting wafers, Double positive medium, Photomasks, Printing, Extreme ultraviolet, Extreme ultraviolet lithography, Transmission electron microscopy, Critical dimension metrology, Inspection, Software development

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Proceedings Article | 23 March 2012 Paper

Printability study of pattern defects in the EUV mask as a function of hp nodes

Tae-Geun Kim, Hwan-Seok Seo, In-Yong Kang, Chang Young Jeong, Sungmin Huh, Jihoon Na, Seong-Sue Kim, Chan-Uk Jeon, Iacopo Mochi, Kenneth Goldberg

Proceedings Volume 8322, 83220A (2012) https://doi.org/10.1117/12.916052

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Extreme ultraviolet lithography, Extreme ultraviolet, Scanning electron microscopy, Scanners, Lithography, Photoresist processing, Semiconductors

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Proceedings Article | 23 March 2012 Paper

Printability and inspectability of defects on EUV blank for 2xnm hp HVM application

Sungmin Huh, In-Yong Kang, Chang Young Jeong, Jihoon Na, Dong Ryul Lee, Hwan-seok Seo, Seong-Sue Kim, Chan-Uk Jeon, Jonggul Doh, Gregg Inderhees, Jinho Ahn

Proceedings Volume 8322, 83220K (2012) https://doi.org/10.1117/12.916021

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Bismuth, Defect inspection, High volume manufacturing, Defect detection, Semiconductors

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Proceedings Article | 26 March 2011 Paper

Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application

Sungmin Huh, In-Yong Kang, Sang-Hyun Kim, Hwan-seok Seo, Dongwan Kim, Jooon Park, Seong-Sue Kim, Han-Ku Cho, Kenneth Goldberg, Iacopo Mochi, Tsutomu Shoki, Gregg Inderhees

Proceedings Volume 7969, 796902 (2011) https://doi.org/10.1117/12.879384

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Wafer inspection, Semiconducting wafers, Defect detection, Defect inspection, Extreme ultraviolet lithography, Manufacturing, Particles

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SPIE Journal Paper | 1 October 2010 Open Access

Photon flux requirements for extreme ultraviolet reticle imaging in the 22- and 16-nm nodes

Daniel Wintz, Kenneth Goldberg, Iacopo Mochi, Sungmin Huh

JM3, Vol. 9, Issue 04, 041205, (October 2010) https://doi.org/10.1117/12.10.1117/1.3491512

KEYWORDS: Line width roughness, Extreme ultraviolet, Charge-coupled devices, Photomasks, Reticles, Extreme ultraviolet lithography, Microscopes, Inspection, Microscopy, Scanning electron microscopy

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Proceedings Article | 15 May 2010 Paper

Study of real defects on EUV blanks and a strategy for EUV mask inspection

Sungmin Huh, Abbas Rastegar, Stefan Wurm, Kenneth Goldberg, Iacopo Mochi, Toshio Nakajima, Masahiro Kishimoto, Mitsuhiko Komakine

Proceedings Volume 7545, 75450N (2010) https://doi.org/10.1117/12.863559

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Extreme ultraviolet lithography, Particles, Semiconducting wafers, Deep ultraviolet, Defect inspection, High volume manufacturing, Atomic force microscopy

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Proceedings Article | 23 March 2010 Paper

Photon flux requirements for EUV reticle imaging microscopy in the 22- and 16nm nodes

Daniel Wintz, Kenneth Goldberg, Iacopo Mochi, Sungmin Huh

Proceedings Volume 7636, 76362L (2010) https://doi.org/10.1117/12.846528

KEYWORDS: Line width roughness, Extreme ultraviolet, Photomasks, Charge-coupled devices, Microscopy, Microscopes, Extreme ultraviolet lithography, Inspection, Scanning electron microscopy, CCD cameras

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Proceedings Article | 20 March 2010 Paper

Printability and inspectability of programmed pit defects on the masks in EUV lithography

In-Yong Kang, Hwan-Seok Seo, Byung-Sup Ahn, Dong-Gun Lee, Dongwan Kim, Sungmin Huh, Cha-Won Koh, Brian Cha, Seoung-Sue Kim, Han-Ku Cho, Iacopo Mochi, Kenneth Goldberg

Proceedings Volume 7636, 76361B (2010) https://doi.org/10.1117/12.847956

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet lithography, Defect inspection, Extreme ultraviolet, Critical dimension metrology, Visibility, Ion beams, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 20 March 2010 Paper

Particle removal challenges of EUV patterned masks for the sub-22nm HP node

Abbas Rastegar, Sean Eichenlaub, Arun John Kadaksham, Byunghoon Lee, Matt House, Sungmin Huh, Brian Cha, Henry Yun, Iacopo Mochi, Kenneth Goldberg

Proceedings Volume 7636, 76360N (2010) https://doi.org/10.1117/12.847056

KEYWORDS: Particles, Extreme ultraviolet, Photomasks, Silica, Ruthenium, Scanning electron microscopy, Reflectivity, Scanning probe microscopy, Vacuum ultraviolet, Inspection

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Proceedings Article | 20 March 2010 Paper

Carbon contamination topography analysis of EUV masks

Yu-Jen Fan, Leonid Yankulin, Petros Thomas, Chimaobi Mbanaso, Alin Antohe, Rashi Garg, Yunfei Wang, Thomas Murray, Andrea Wüest, Frank Goodwin, Sungmin Huh, Aaron Cordes, Patrick Naulleau, Kenneth Goldberg, Iacopo Mochi, Eric Gullikson, Gregory Denbeaux

Proceedings Volume 7636, 76360G (2010) https://doi.org/10.1117/12.846996

KEYWORDS: Carbon, Contamination, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Reflectivity, Printing, Scanning electron microscopy, Inspection, Lithography

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Proceedings Article | 20 March 2010 Paper

A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection

Sungmin Huh, Liping Ren, David Chan, Stefan Wurm, Kenneth Goldberg, Iacopo Mochi, Toshio Nakajima, Masahiro Kishimoto, Byungsup Ahn, Inyong Kang, Joo-on Park, Kyoungyong Cho, Sang-in Han, Thomas Laursen

Proceedings Volume 7636, 76360K (2010) https://doi.org/10.1117/12.846922

KEYWORDS: Photomasks, Wafer inspection, Inspection, Particles, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Mask making, High volume manufacturing

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Proceedings Article | 27 May 2009 Paper

EUV actinic defect inspection and defect printability at the sub-32-nm half-pitch

Sungmin Huh, Patrick Kearney, Stefan Wurm, Frank Goodwin, Hakseung Han, Kenneth Goldberg, Iacopo Mochi, Eric Gullikson

Proceedings Volume 7470, 74700Y (2009) https://doi.org/10.1117/12.835196

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Defect inspection, Reticles, Extreme ultraviolet lithography, Multilayers, Deep ultraviolet, Semiconducting wafers, Critical dimension metrology

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Proceedings Article | 11 May 2009 Paper

SEMATECH EUVL mask program status

Henry Yun, Frank Goodwin, Sungmin Huh, Kevin Orvek, Brian Cha, Abbas Rastegar, Patrick Kearney

Proceedings Volume 7379, 73790G (2009) https://doi.org/10.1117/12.824257

KEYWORDS: Photomasks, Particles, Extreme ultraviolet, Extreme ultraviolet lithography, Inspection, Lithography, Deposition processes, Defect inspection, Surface roughness, Manufacturing

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As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been made but a continued collaborative effort will be needed along with timely infrastructure investments to meet these challenging goals.

Proceedings Article | 18 March 2009 Paper

Collecting EUV mask images through focus by wavelength tuning

Kenneth Goldberg, Iacopo Mochi, Sungmin Huh

Proceedings Volume 7271, 72713N (2009) https://doi.org/10.1117/12.824433

KEYWORDS: Photomasks, Wavelength tuning, Extreme ultraviolet, Optical properties, Mirrors, Diffraction, Reticles, Inspection, Monochromators, Line width roughness

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Proceedings Article | 18 March 2009 Paper

Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging

Yu-Jen Fan, Leonid Yankulin, Alin Antohe, Rashi Garg, Petros Thomas, Chimaobi Mbanaso, Andrea Wüest, Frank Goodwin, Sungmin Huh, Patrick Naulleau, Kenneth Goldberg, Iacopo Mochi, Gregory Denbeaux

Proceedings Volume 7271, 72713U (2009) https://doi.org/10.1117/12.814196

KEYWORDS: Photomasks, Contamination, Carbon, Extreme ultraviolet, Scanning electron microscopy, Printing, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Reflectivity

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Proceedings Article | 18 March 2009 Paper

Mask defect verification using actinic inspection and defect mitigation technology

Sungmin Huh, Patrick Kearney, Stefan Wurm, Frank Goodwin, Kenneth Goldberg, Iacopo Mochi, Eric Gullikson

Proceedings Volume 7271, 72713J (2009) https://doi.org/10.1117/12.814249

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Defect inspection, Semiconducting wafers, Extreme ultraviolet lithography, Deep ultraviolet, Wafer inspection, Reticles, Defect detection

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Proceedings Article | 18 March 2009 Paper

Improving the performance of the actinic inspection tool with an optimized alignment procedure

Iacopo Mochi, Kenneth Goldberg, Patrick Naulleau, Sungmin Huh

Proceedings Volume 7271, 727123 (2009) https://doi.org/10.1117/12.814261

KEYWORDS: Monochromatic aberrations, Photomasks, Extreme ultraviolet, Inspection, Point spread functions, Alignment procedures, Image resolution, Image quality, Wavefronts, Algorithm development

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Extreme ultraviolet (EUV) microscopy is an important tool for the investigation of the performance of EUV masks, for detecting the presence and the characteristics of defects, and for evaluating the effectiveness of defect repair techniques. Aerial image measurement bypasses the difficulties inherent to photoresist imaging and enables high data collection speed and flexibility. It provides reliable and quick feedback for the development of masks and lithography system modeling methods. We operate the SEMATECH Berkeley Actinic Inspection Tool (AIT), a EUV microscope installed at the Advanced Light Source at Lawrence Berkeley National Laboratory. The AIT is equipped with several highmagnification Fresnel zoneplate lenses, with various numerical aperture values, that enable it image the reflective mask surface with various resolution and magnification settings. Although the AIT has undergone significant recent improvements in terms of imaging resolution and illumination uniformity, there is still room for improvement. In the AIT, an off-axis zoneplate lens collects the light coming from the sample and an image of the sample is projected onto an EUV-sensitive CCD camera. The simplicity of the optical system is particularly helpful considering that the AIT alignment has to be performed every time that a sample or a zoneplate is replaced. The alignment is sensitive to several parameters such as the lens position and orientation, the illumination direction and the sample characteristics. Since the AIT works in high vacuum, there is no direct access to the optics or to the sample during the alignment and the measurements. For all these reasons the alignment procedures and feedback can be complex, and in some cases can reduce the overall data throughput of the system. In this paper we review the main strategies and procedures that have been developed for quick and reliable alignments, and we describe the performance improvements we have achieved, in terms of aberration magnitude reduction.

Proceedings Article | 18 March 2009 Paper

Characteristics and issues of an EUVL mask applying phase-shifting thinner absorber for device fabrication

Hwan-Seok Seo, Dong-Gun Lee, Byung-Sup Ahn, Hakseung Han, Sungmin Huh, In-Yong Kang, Hoon Kim, Dongwan Kim, Seong-Sue Kim, Han-Ku Cho

Proceedings Volume 7271, 72710D (2009) https://doi.org/10.1117/12.813932

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Nanoimprint lithography, Silicon, Semiconducting wafers, Ruthenium, Extreme ultraviolet, Reflectivity, Phase shifts, Refractive index

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Proceedings Article | 17 October 2008 Paper

Control of the sidewall angle of an absorber stack using the Faraday cage system for the change of pattern printability in EUVL

Il-Yong Jang, Sung-Min Huh, Seong-Yong Moon, Sang-Gyun Woo, Jin-Kwan Lee, Sang Heup Moon, HanKu Cho

Proceedings Volume 7122, 712228 (2008) https://doi.org/10.1117/12.801413

KEYWORDS: Etching, Critical dimension metrology, Photomasks, Oxides, Tantalum, Extreme ultraviolet lithography, Optical properties, Plasma, Semiconducting wafers, Extreme ultraviolet

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Proceedings Article | 17 October 2008 Paper

Benchmarking EUV mask inspection beyond 0.25 NA

Kenneth Goldberg, Iacopo Mochi, Patrick Naulleau, Hakseung Han, Sungmin Huh

Proceedings Volume 7122, 71222E (2008) https://doi.org/10.1117/12.801529

KEYWORDS: Photomasks, Extreme ultraviolet, Monochromatic aberrations, Inspection, Imaging systems, Contrast transfer function, Extreme ultraviolet lithography, Mirrors, Optical alignment, CCD cameras

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Proceedings Article | 3 April 2008 Paper

Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool

Patrick Naulleau, Christopher Anderson, Jerrin Chiu, Kim Dean, Paul Denham, Kenneth Goldberg, Brian Hoef, Sungmin Huh, Gideon Jones, Bruno LaFontaine, Andy Ma, Dimitra Niakoula, Joo-on Park, Tom Wallow

Proceedings Volume 6921, 69213N (2008) https://doi.org/10.1117/12.773833

KEYWORDS: Line edge roughness, Monochromatic aberrations, Extreme ultraviolet, Photomasks, Printing, Lithography, Extreme ultraviolet lithography, Semiconducting wafers, Projection systems, Wafer-level optics

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Proceedings Article | 27 March 2008 Paper

Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials

Sungmin Huh, Hoon Kim, Gisung Yoon, Jaehyuck Choi, Han-Shin Lee, Dong Gun Lee, Byungsup Ahn, Hwan-Seok Seo, Dongwan Kim, Seoung Sue Kim, Han Ku Cho, Takeo Watanabe, Hiroo Kinoshita

Proceedings Volume 6921, 692115 (2008) https://doi.org/10.1117/12.772412

KEYWORDS: Photomasks, Carbon, Contamination, Ruthenium, Extreme ultraviolet lithography, Silicon, Critical dimension metrology, Reflectivity, Extreme ultraviolet, Semiconducting wafers

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Proceedings Article | 20 October 2006 Paper

The specification of the 45-nm node photomask repair process

Moon Gyu Sung, Sungmin Huh, Byung Cheol Cha, Sungwoon Choi, Woosung Han

Proceedings Volume 6349, 63494H (2006) https://doi.org/10.1117/12.686509

KEYWORDS: Photomasks, Transmittance, Polarization, Critical dimension metrology, Diffractive optical elements, Solids, Etching, Scanning electron microscopy, Semiconducting wafers, Quartz

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Proceedings Article | 20 October 2006 Paper

EUV mask pattern inspection for memory mask fabrication in 45-nm node and below

Do Young Kim, Seong Yong Cho, Hun Kim, Sung Min Huh, Dong Hoon Chung, Byung Chul Cha, Jung Woo Lee, Seong Woon Choi, Woo Sung Han, Ki Hun Park, Eun Ji Kim, Zhengyu Guo, Ellen Quach, David Gee, Tom Brown, Aditya Dayal

Proceedings Volume 6349, 63492L (2006) https://doi.org/10.1117/12.686488

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, EUV optics, Extreme ultraviolet lithography, Deep ultraviolet, Reticles, Defect detection, Binary data, Current controlled current source

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Proceedings Article | 20 August 2004 Paper

New approach for quartz dry etching using hardmask for sub-90-nm photomask technology

Sungmin Huh, Ki-Sung Yoon, Il-Yong Jang, Jung-Hyun Hwang, In-Kyun Shin, Sung-Woon Choi, Woo-Sung Han

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557675

KEYWORDS: Quartz, Etching, Photomasks, Dry etching, Chromium, Diffractive optical elements, Polymers, Resolution enhancement technologies, Phase shifts, Ions

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Proceedings Article | 28 August 2003 Paper

Phase defect printability analysis for chromeless phase lithography technology

Sungmin Huh, JoHyung Park, Dong-Hoon Chung, Chang-Hwan Kim, In-Kyun Shin, Sung-Woon Choi, Jung-Min Sohn

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504395

KEYWORDS: Photomasks, Inspection, Quartz, Dry etching, Finite-difference time-domain method, Lithography, Defect inspection, Semiconducting wafers, Mask making, Defect detection

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Showing 5 of 27 publications

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