Writing magnetic random-access memory (MRAM) by ultrafast and energy-efficient spin-orbit torque (SOT) has been impeded by the orthogonality between spin polarization and thermally stable perpendicular magnetic anisotropy (PMA). Previously proposed approaches to break this symmetry increase the fabrication complexity, are highly sensitive to the SOT current duration and magnitude, or increase the switching energy. To overcome these challenges, we exploit the precessional nature of the field-like SOT to propose a toggle PMA SOT-MRAM with simple structure that is controlled by a unidirectional SOT current. The proposed MRAM achieves field-free and energy-efficient switching that is robust to variations in the SOT current magnitude and duration with greater than 50% tolerance demonstrated through micromagnetic simulation. The deformation-free structure provides efficient data read-out and can be leveraged for directional writing through a simple XOR between the stored and incoming bits.
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