Dr. Swamy V. Muddu Profile

Dr. Swamy V. Muddu

Graduate Student Researcher

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Publications (7)

Proceedings Article | 15 March 2012 Paper

Design-of-experiments based design rule optimization

Abde Ali Kagalwalla, Swamy Muddu, Luigi Capodieci, Coby Zelnik, Puneet Gupta

Proceedings Volume 8327, 832709 (2012) https://doi.org/10.1117/12.918067

KEYWORDS: Statistical analysis, Manufacturing, Lithography, Design for manufacturability, Standards development, Statistical modeling, Astatine, Double patterning technology, 193nm lithography

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Proceedings Article | 19 May 2008 Paper

Predictive modeling of lithography-induced linewidth variation

Andrew Kahng, Swamy Muddu

Proceedings Volume 7028, 70280M (2008) https://doi.org/10.1117/12.793029

KEYWORDS: Optical proximity correction, Diffractive optical elements, Instrument modeling, Lithography, Diffusion, Computer simulations, Error analysis, Critical dimension metrology, Data modeling, Process modeling

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SPIE Journal Paper | 1 January 2008

Auxiliary pattern-based optical proximity correction for better printability, timing, and leakage control

Andrew Kahng, Swamy Muddu, Chul-Hong Park

JM3, Vol. 7, Issue 01, 013002, (January 2008) https://doi.org/10.1117/12.10.1117/1.2898504

KEYWORDS: Optical proximity correction, Critical dimension metrology, SRAF, Lithography, Model-based design, Semiconducting wafers, Resolution enhancement technologies, Standards development, Computer programming, Image processing

Proceedings Article | 14 March 2006 Paper

Modeling edge placement error distribution in standard cell library

Puneet Gupta, Andrew Kahng, Swamy Muddu, Sam Nakagawa

Proceedings Volume 6156, 61560S (2006) https://doi.org/10.1117/12.658580

KEYWORDS: Optical proximity correction, Lithography, Statistical analysis, Diffusion, Instrument modeling, Standards development, Error analysis, Photomasks, Optics manufacturing, Design for manufacturability

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Proceedings Article | 9 November 2005 Paper

Modeling OPC complexity for design for manufacturability

Puneet Gupta, Andrew Kahng, Swamy Muddu, Sam Nakagawa, Chul-Hong Park

Proceedings Volume 5992, 59921W (2005) https://doi.org/10.1117/12.633416

KEYWORDS: Optical proximity correction, Tolerancing, Information technology, Resolution enhancement technologies, Data modeling, Image quality standards, Optimization (mathematics), Design for manufacturability, Manufacturing, Performance modeling

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Increasing design complexity in sub-90nm designs results in increased mask complexity and cost. Resolution enhancement techniques (RET) such as assist feature addition, phase shifting (attenuated PSM) and aggressive optical proximity correction (OPC) help in preserving feature fidelity in silicon but increase mask complexity and cost. Data volume increase with rise in mask complexity is becoming prohibitive for manufacturing. Mask cost is determined by mask write time and mask inspection time, which are directly related to the complexity of features printed on the mask. Aggressive RET increase complexity by adding assist features and by modifying existing features. Passing design intent to OPC has been identified as a solution for reducing mask complexity and cost in several recent works. The goal of design-aware OPC is to relax OPC tolerances of layout features to minimize mask cost, without sacrificing parametric yield. To convey optimal OPC tolerances for manufacturing, design optimization should drive OPC tolerance optimization using models of mask cost for devices and wires. Design optimization should be aware of impact of OPC correction levels on mask cost and performance of the design. This work introduces mask cost characterization (MCC) that quantifies OPC complexity, measured in terms of fracture count of the mask, for different OPC tolerances. MCC with different OPC tolerances is a critical step in linking design and manufacturing. In this paper, we present a MCC methodology that provides models of fracture count of standard cells and wire patterns for use in design optimization. MCC cannot be performed by designers as they do not have access to foundry OPC recipes and RET tools. To build a fracture count model, we perform OPC and fracturing on a limited set of standard cells and wire configurations with all tolerance combinations. Separately, we identify the characteristics of the layout that impact fracture count. Based on the fracture count (FC) data from OPC and mask data preparation runs, we build models of FC as function of OPC tolerances and layout parameters.

Proceedings Article | 28 August 2003 Paper

Resist heating dependence on subfield scheduling in 50-kV electron beam maskmaking

Sergey Babin, Andrew Kahng, Ion Mandoiu, Swamy Muddu

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.512442

KEYWORDS: Critical dimension metrology, Photomasks, Distortion, Electron beams, Electron beam lithography, Semiconductors, Computer simulations, Ions, Electrochemical etching, Lanthanum

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Proceedings Article | 16 June 2003 Paper

Subfield scheduling for throughput maximization in electron-beam photomask fabrication

Sergey Babin, Andrew Kahng, Ion Mandoiu, Swamy Muddu

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484981

KEYWORDS: Photomasks, Critical dimension metrology, Distortion, Electron beams, Vestigial sideband modulation, Semiconductors, Mask making, Distance measurement, Ions, Electrochemical etching

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Showing 5 of 7 publications

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