Mr. Takashi Haraguchi Profile

Takashi Haraguchi

at Toppan Printing Co Ltd

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 10 May 2016 Paper

Paper

Novel EUV mask black border suppressing EUV and DUV OoB light reflection

Shin Ito, Yutaka Kodera, Norihito Fukugami, Toru Komizo, Shingo Maruyama, Genta Watanabe, Itaru Yoshida, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9984, 99840O (2016) https://doi.org/10.1117/12.2242624

KEYWORDS: Extreme ultraviolet, Photomasks, Deep ultraviolet, Extreme ultraviolet lithography, Reflectivity, Semiconducting wafers, Neodymium, Reflection, Ultraviolet radiation, Manufacturing

Read Abstract +

EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV reflectance (<0.05%) have been proposed; such an image border is referred to as a black border. In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light from the EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel BB called ‘Hybrid Black Border’ (HBB) has been developed to eliminate EUV and DUV OOB light reflection by applying optical design technique and special micro-fabrication technique. A new test mask with HBB is fabricated without any degradation of mask quality according to the result of CD performance in the main pattern, defectivity and cleaning durability. The imaging performance for N10 imaging structures is demonstrated on NXE:3300B in collaboration with ASML. This result is compared to the imaging results obtained for a mask with the earlier developed BB, and HBB has achieved ~3x improvement; less than 0.2 nm CD changes are observed in the corners of the die. A CD uniformity budget including impact of OOB light in the die edge area is evaluated which shows that the OOB impact from HBB becomes comparable with other CDU contributors in this area. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Proceedings Article | 18 March 2016 Paper

Paper

Novel EUV mask black border and its impact on wafer imaging

Yutaka Kodera, Norihito Fukugami, Toru Komizo, Genta Watanabe, Shin Ito, Itaru Yoshida, Shingo Maruyama, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9776, 977615 (2016) https://doi.org/10.1117/12.2218942

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Deep ultraviolet, Imaging systems, Semiconducting wafers, Reflectivity, Printing, Semiconductor manufacturing, Reflection, Manufacturing

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Proceedings Article | 14 October 2011 Paper

Paper

Attenuated phase-shift mask with high tolerance for 193nm radiation damage

Taichi Yamazaki, Ryohei Gorai, Yosuke Kojima, Takashi Haraguchi, Tsuyoshi Tanaka, Ryuji Koitabashi, Yukio Inazuki, Hiroki Yoshikawa

Proceedings Volume 8166, 81663V (2011) https://doi.org/10.1117/12.898984

KEYWORDS: Photomasks, Silica, Lithography, Opacity, Excimer lasers, Phase shifts, Critical dimension metrology, Chemical vapor deposition, Radiation effects, 193nm lithography

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Proceedings Article | 25 September 2010 Paper

Paper

Study and improvement approach to 193-nm radiation damage of attenuated phase-shift mask

Yoshifumi Sakamoto, Tomohito Hirose, Hitomi Tsukuda, Taichi Yamazaki, Yosuke Kojima, Hayato Ida, Takashi Haraguchi, Tsuyoshi Tanaka, Ryuji Koitabashi, Yukio Inazuki, Hiroki Yoshikawa

Proceedings Volume 7823, 782324 (2010) https://doi.org/10.1117/12.867710

KEYWORDS: Photomasks, Opacity, Lithography, Radiation effects, Silica, Transmission electron microscopy, Excimer lasers, 193nm lithography, Silicon, Oxidation

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Proceedings Article | 26 May 2010 Paper

Paper

Study of etching process for LER and resolution

Tomohiro Imoto, Yosuke Kojima, Norihito Fukugami, Takashi Haraguchi, Tsuyoshi Tanaka

Proceedings Volume 7748, 77480D (2010) https://doi.org/10.1117/12.866417

KEYWORDS: Line edge roughness, Etching, Photomasks, Chromium, Opacity, Semiconducting wafers, Inspection, Printing, Dry etching, Scanning electron microscopy

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Proceedings Article | 11 May 2009 Paper

Paper

Fine pattern fabrication property of binary mask and attenuated phase shift mask

Taichi Yamazaki, Yosuke Kojima, Mitsuharu Yamana, Takashi Haraguchi, Tsuyoshi Tanaka

Proceedings Volume 7379, 73791V (2009) https://doi.org/10.1117/12.824307

KEYWORDS: SRAF, Chromium, Photomasks, Inspection, Image resolution, Phase shifts, Optical simulations, Binary data, Semiconducting wafers, Glasses

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Proceedings Article | 17 October 2008 Paper

Paper

Challenges for the quality control of assist features for 45nm node technology and beyond

Lin Wang, Todd Lukanc, Makoto Takahashi, Hung-Eil Kim, Khoi Phan, Taichi Yamazaki, Yosuke Kojima, Wataru Nozaki, Takashi Haraguchi, Yoshimitsu Okuda

Proceedings Volume 7122, 71220Z (2008) https://doi.org/10.1117/12.800916

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Optical proximity correction, Line edge roughness, Chromium, Photoresist processing, Resolution enhancement technologies, Reticles, SRAF

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Proceedings Article | 19 May 2008 Paper

Paper

MoSi absorber photomask for 32nm node

Toshio Konishi, Yosuke Kojima, Hiroyuki Takahashi, Masato Tanabe, Takashi Haraguchi, Matthew Lamantia, Yuichi Fukushima, Yoshimitsu Okuda

Proceedings Volume 7028, 702803 (2008) https://doi.org/10.1117/12.796010

KEYWORDS: Photomasks, Chromium, Semiconducting wafers, Air contamination, Lithography, Nanoimprint lithography, Printing, Critical dimension metrology, Binary data, Dry etching

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Proceedings Article | 11 May 2007 Paper

Paper

Improvement of CD variation control for attenuated phase-shift mask

Mikio Takagi, Takashi Mizoguchi, Yosuke Kojima, Tadashi Saga, Takashi Haraguchi, Yuichi Fukushima, Tsuyoshi Tanaka, Yoshimitsu Okuda, Yukio Inazuki, Hiroki Yoshikawa, Satoshi Okazaki

Proceedings Volume 6607, 66070B (2007) https://doi.org/10.1117/12.728924

KEYWORDS: Chromium, Critical dimension metrology, Photomasks, Etching, Printing, Semiconducting wafers, Manufacturing, Mass attenuation coefficient, Metals, Molybdenum

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Proceedings Article | 20 October 2006 Paper

Paper

High-transmission attenuated phase-shift mask for ArF immersion lithography

Yosuke Kojima, Takashi Mizoguchi, Takashi Haraguchi, Toshio Konishi, Yoshimitsu Okuda

Proceedings Volume 6349, 63491V (2006) https://doi.org/10.1117/12.686998

KEYWORDS: Optical proximity correction, Transmittance, Photomasks, Polarization, Scanners, Resolution enhancement technologies, Lithography, Immersion lithography, Phase shifting, Semiconducting wafers

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Proceedings Article | 20 May 2006 Paper

Paper

Evaluating films for high transmission attenuated phase shift masks

Satoru Nemoto, Toru Komizo, Yasutaka Kikuchi, Emily Gallagher, Jason Benz, Michael Hibbs, Takashi Haraguchi

Proceedings Volume 6283, 628322 (2006) https://doi.org/10.1117/12.681767

KEYWORDS: Etching, Reflection, Quartz, Photomasks, Phase shifts, Phase measurement, Inspection, Surface roughness, Scanning electron microscopy, Radium

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Proceedings Article | 19 May 2006 Paper

Paper

Study of mask induced polarization effects on att.PSM in immersion lithography

Takashi Mizoguchi, Yousuke Kojima, Mikio Takagi, Tadashi Saga, Takashi Haraguchi, Toshio Konishi, Yuuichi Fukushima, Tsuyoshi Tanaka, Yoshimitsu Okuda

Proceedings Volume 6283, 62831E (2006) https://doi.org/10.1117/12.681878

KEYWORDS: Nanoimprint lithography, Photomasks, Polarization, Refractive index, Immersion lithography, Mass attenuation coefficient, Lithographic illumination, Lithography, Quartz, Printing

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Proceedings Article | 5 September 2001 Paper

Paper

ZrSiON as a material for high-transmittance attenuated PSM

Koichiro Kanayama, Takashi Haraguchi, Tsukasa Yamazaki, Toshihiro Ii, Tadashi Matsuo, Nobuhiko Fukuhara, Tadashi Saga, Yusuke Hattori, Takashi Ooshima, Masao Otaki

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438336

KEYWORDS: Transmittance, Chromium, Lithography, Phase shifts, Inspection, Atrial fibrillation, Etching, Resolution enhancement technologies, Silicon, Sputter deposition

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Proceedings Article | 22 January 2001 Paper

Paper

Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography

Toshihiro Ii, Tadashi Saga, Yusuke Hattori, Takashi Ohshima, Masao Otaki, Masahide Iwakata, Takashi Haraguchi, Koichiro Kanayama, Tsukasa Yamazaki, Nobuhiko Fukuhara, Tadashi Matsuo

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410706

KEYWORDS: Transmittance, Phase shifts, Photomasks, Lithography, Atrial fibrillation, Inspection, Etching, Dry etching, Defect inspection, Resistance

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Proceedings Article | 22 January 2001 Paper

Paper

Materials for an attenuated phase-shifting mask in 157-nm lithography

Takahiro Matsuo, Toshio Onodera, Toshiro Itani, Hiroaki Morimoto, Takashi Haraguchi, Koichiro Kanayama, Tadashi Matsuo, Masao Otaki

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410703

KEYWORDS: Transmittance, Chromium, Laser irradiation, Atrial fibrillation, Vacuum ultraviolet, Phase shifts, Photomasks, Lithography, Defect inspection, Quartz

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Proceedings Article | 30 December 1999 Paper

Paper

Development of ZrSiO attenuated phase-shift mask for ArF excimer laser lithography

Nobuhiko Fukuhara, Takashi Haraguchi, Koichiro Kanayama, Tadashi Matsuo, Susumu Takeuchi, Kozue Tomiyama, Tadashi Saga, Yusuke Hattori, Takashi Ooshima, Masao Otaki

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373291

KEYWORDS: Reflectivity, Transmittance, Photomasks, Phase shifts, Inspection, Dry etching, Excimer lasers, Lithography, Etching, Sputter deposition

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Proceedings Article | 30 December 1999 Paper

Paper

ZrSiO: a new and robust material for attenuated phase-shift mask in ArF lithography

Toshio Onodera, Takahiro Matsuo, Keisuke Nakazawa, Junji Miyazaki, Tohru Ogawa, Hiroaki Morimoto, Takashi Haraguchi, Nobuhiko Fukuhara, Tadashi Matsuo, Masao Otaki, Susumu Takeuchi

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373329

KEYWORDS: Lithographic illumination, Resolution enhancement technologies, Photomasks, Lithography, Reticles, Transmittance, Critical dimension metrology, Silicon films, Semiconducting wafers, Oxygen

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Proceedings Article | 1 September 1998 Paper

Paper

Optimization of Zr-Si compound films for attenuated PSM

Takashi Haraguchi, Tadashi Matsuo, Susumu Takeuchi

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328843

KEYWORDS: Zirconium, Phase shifts, Spectroscopy, Transmittance, Silicon, Optical properties, Photomasks, Chemical analysis, Argon, X-rays

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Proceedings Article | 28 July 1997 Paper

Paper

Zr-based films for attenuated phase-shift mask

Tadashi Matsuo, Kinji Ohkubo, Takashi Haraguchi, Kohsuke Ueyama

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277280

KEYWORDS: Phase shifts, Excimer lasers, Etching, Annealing, Resistance, Sputter deposition, Dry etching, Photomasks, Silicon, Surface roughness

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Showing 5 of 19 publications

Conference Committee Involvement (1)

Photomask and NGL Mask Technology X

16 April 2003 | Yokohama, Japan

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