One of main issues of EUV lithography is to reduce so-called shadowing effect attributed to
oblique incidence of EUV light on a mask. In order to mitigate shadowing, a thinner absorber
layer thickness for EUV mask is preferred. In order to realize EUV masks with thinner
absorber stack, we introduced SnO film as a high absorptive material for EUV light. Thorough
actual measurement of EUV reflectance and subsequent data fitting to theoretical curve, we
confirmed that SnO has large k (extinction coefficient) value. As a result, SnO absorber can
do with about a half thickness compared to Ta-based absorber having the same OD value.
Using SnO film, we designed a binary mask consisting of SnO/CrN-buffer pattern and an
att.PSM consisting of SnO/Ru-shifter pattern. SnO has also considerable transparency in the
range of DUV wavelength for use of defect inspection. We confirmed both binary mask and
att.PSM have low reflectance in the range of DUV wavelength even without top AR coating.
The att.PSM can realize appropriate reflectance (nearby 6%) at a phase shift of 180 deg with the
total patterned (SnO/Ru) thickness of below 41 nm even with 6 nm thick SiN top coating.
Furthermore, we evaluated dry etched cross sectional profile of the binary mask and the att.PSM.
The initial etch profiles look encouraging.
We evaluated TaSix-based bi-layer absorber on ZrSi-based buffer for EUV mask, especially
considering the possibility of ZrSi-based film as a combined buffer and capping layer. Since
ZrSi-based film has both high dry-etching resistance and EUV transparency, it has potentiality to
work as a combined capping and buffer layer. AFM machining repair of bi-layer TaSix absorber
on ZrSi-based buffer can be performed to good profile. Printing evaluation showed that
over-repair into buffer layer did not affect significantly to wafer CD. FIB (10keV) repair of
bi-layer TaSix absorber on ZrSi-based buffer needs improvement for side-wall profile and
distinguishable evaluation from implanted Ga+ effect in more detail. Effect of FIB (10keV) scan
with ordinary repair process seems to be at least smaller than 10%.
We evaluated and optimized Ta-based absorber added by Si for EUV mask. Consequently, we
confirmed TaSix based bi-layer absorber stack has the following performances; It has amorphous
morphology without columnar structure advantageous to fabricate fine pattern with smaller line edge
roughness. In order to realize better position accuracy, it has low internal stress capable to control.
As an optical property, it has low DUV reflectance at 257nm which facilitates to perform defect
inspection. As it can be etched anisotropcally by conventional halogen gases without using hard
mask, we achieved almost vertical sidewall profile of 120nm lines and spaces pattern and promising
CD control accuracy.
ArF lithography which is a leading technology for 100nm node device fabrication is approaching the stage of practical use, where resolution enhancement techniques (RET) represented by attenuated phase shift mask (att.PSM) are expected to be used from the beginning. ON the other hand, in order to obtain higher depth of focus and resolution, it is said that att.PSM with high transmittance (HT-PSM) will be adopted to KrF and ArF lithography. We have developed zirconium silicon oxide (ZrSiO) att.PSM and reported its utilities toward practical use of ArF lithography. In this paper, we present examination results of possibility of ZrSiON att.PSM to be applied to HT-PSM for KrF and ArF lithography. Consequently, we confirmed the possibility and effectiveness of ZrSiON for HT-PSM as follows; ZrSiON films are convenient to control optical properties required for HT-PSM because of its distribution of optical constants (n;refractive index, k;extinction coefficient) with deposition conditions. Bi- layer HT-PSM having transmittance of 15% for ArF of KrF lithography show such good spectral transmittance that they can be inspected with currently available inspection tool. ZrSiON blanks are also proved to have high durability against cleaning chemicals of not only acid but alkali. Moreover, ZrSiON shifter has good dry-etching durability against Cr dry-etching stacked on ZrSiON film, which makes it easy to control phase angle in fabricating tri-tone-type HT-PSM.
Attenuated phase shifting mask (att-PSM) is one of the key technologies for 130 nm and below device fabrication. We have proposed zirconium silicon oxide (ZrSiO) as a suitable material for next-generation att-PSM material. Through our optimization process both for film deposition and dry etching condition, we confirmed that we could control its phase shift and transmittance precisely. Because of its low film stress, we could neglect registration degradation. From its excellent spectral property, we can apply currently available defect inspection systems. Defect repair is easily performed by gas assisted etching. Further, we were successful to make high-transmittance material (16 %) at ArF laser source even keeping inspectability.
We have investigated new materials for 157nm attenuated phase-shifting mask (Att-PSM). The structure of the Att-PSM is based on the bi-layer film in which a transparent film (TF) is deposited on an absorptive film (AF) on quartz substrate. We evaluated the optical property and the durability against F2 laser irradiation for 157nm Att-PSM materials, for which we prepared the modified ZrSixOy films and SiOx film as a TF and the Cr film and the modified ZrSixOy films as an AF. For a TF, the SiOx and modified ZrSixOy films achieve high transparency and robust durability against F2 laser light. For an AF, the Cr film achieves robust irradiation durability. Furthermore, we investigated the feasibility of defect inspection in consideration of the various combinations of TF and AF. From the calculation of the transmittance at inspection wavelength (193nm and 248nm), it is expected that the defect inspection is feasible in the combination of the SiOx or ZrSixOy transparent films with any absorptive film.
We have reported that Zirconium Silicon Oxide (ZrSiO) film is one of the most promising materials for attenuated phase shift mask (att. PSM) for ArF excimer laser lithography. In this paper, we report on practical mask characteristics of ZrSiO att.PSM through its fabrication process. Optical constants (refractive index n/extinction coefficient k) of ZrSiO sputtered films vary continuously according to Ar/O2 flow ratios. A reasonable solution to improve spectroscopic property including transmittance at inspection wavelength can be obtained by a bi-layer structure, consisting of two films having different optical constants, that is absorptive film (AF) and transmissive film (TF). By selecting a pair of appropriate optical constants and adjusting thickness of each layer, we developed the bi-layer structure suitable for optical and other required properties. ZrSiO films are etched by chlorine-based gases, especially AF (bottom layer) dry etching using BCl3 gas has high selectivity to quartz substrate. By optimizing dry etching conditions, cross sectional profile has been attained to over 80 deg, moreover no remarkable residues and edge roughness can be seen. These masks are confirmed to have sufficient tolerance to conventional cleaning process by monitoring the change of transmittance or reflectance curve. Consequently, both transmittance and phase shift through fabrication process approached the required specification, plus or minus 0.3% and plus or minus 2 deg, respectively. Inspection or measurement tools for conventional masks are also applicable. In addition, ZrSiO att.PSM is proved to have sufficient durability for ArF excimer laser irradiation.
We propose zirconium silicon oxide (ZrSiO) film as a powerful candidate for attenuated phase-shift mask (Att-PSM) materials. A bi-layer structure of this material with an absorptive film (AF) and a transparent film (TF) can effectively control the transmittance and phase. We confirmed the durability of the ZrSiO film in ArF laser irradiation. The lifetime with the change in transmittance and phase after irradiation at 30 kJ(DOT)cm-2 is equivalent to a total dose of 3 years in future ArF exposure systems. We investigated the resolution performance of the Att-PSM with ZrSiO film for a 130 nm pattern. The depth of focus with the Att-PSM was larger than that of the binary mask. Therefore, an Att-PSM with ZrSiO is promising for developing a 130-nm-technology node with ArF lithography. Controllability of the critical dimension on the wafer is discussed from the viewpoint of the mask error factor (MEF).
This paper reports optimization of Zirconium-Silicon-Oxide (ZrSiO) films for attenuated phase shift mask (Att.PSM) concerning Zr/Si compound ratio. ZrSiO films were deposited by RF magnetron co-sputtering in Ar mixed with O2 gas using separated dual cathode of Zr and Si. Researched were the relationships between chemical durabilities, optical property, and Zr/Si compound ratio determined with XPS analysis. As a result, it was confirmed that controllability of optical property, chemical durabilities, and spectroscopic property would be improved by optimizing Zr/Si compound ratio. Consequently, by composing appropriate optical constants and thickness of bi-layer ZrSiO films, various transmitting Att.PSM can be obtained.
An aptitude for attenuated phase shift mask (AttPSM) blank of zirconium silicon oxide (ZrSiO) films for excimer laser lithography use was evaluated. ZrSiO films were deposited by dc or rf sputtering in Ar mixed with 02 gas using ZrSi2 target. Since optical constants of ZrSiO films vary with sputtering parameters, their bi-layer structures can fulfill optical quality required AttPSM. They have high durability to heating conc. H2SO4 independent of their optical constants. Internal stress varies from initial compression to tensile side by annealing to obtain conveniently a low stressed blank. Sheet resistance and surface roughness are sufficiently small to fabricate AttPSM pattern including sub- micron features. They are etched by chlorine-based gases, resulting in high dry etch selectivity to quartz substrate. Although they are expected to have potential in durability to excimer laser, it should be evaluated under the conditions similar to exposure system.
X-ray mask distortion can be attributed to the absorber stress, and the fabrication process associated with membrane stress and mask structure. Fabrication process induced distortion is greatly influenced by the sequence of each step, that is e-beam writing, bulk-Si etching (back- etching), and frame mounting. On fabricating x-ray mask, final back-etching process (consisting of e-beam writing onto frame mounted blank, succeeding back-etching) is thought to be comparatively practical and feasible. We evaluated x-ray mask distortion caused by final back-etching step for several masks containing structural features. Simulated results on the basis of elastic theory predicted that absorber pattern making after half back-etching or minimizing the area of tensile stressed membrane reduces the in-plane distortion caused by back-etching step. In addition, the experimentally obtained results demonstrated that pattern pitch (2.5 mm) deviation (3 (sigma) ) was suppressed down to 30 nm, which was within the repeatability of measurement system.
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