This paper shows the latest challenges facing mask blank evolution to support leading-edge lithography processes. ArF immersion lithography has been employing multi-pass exposures to exceed the physical diffraction limit. These photomasks demand very accurate overlay, higher NILS and best CD uniformity for wider process window. The subject was considered from two perspectives from a mask blank producer, which are the mask-making perspective and the wafer lithography perspective. To improve the overlay, we introduced the dedicated CDL (Charge Dissipation Layer) for improving mask registration error. From the lithography resolution perspective, we have developed a high-transmittance phase-shifter film for higher NILS. CDU stability point of view, we described “Superior pattern fidelity CAR”, “High ArF durability SiN phase-shifter” and “Transparent etching stopper”. The industry decided to move to EUV lithography. But there are still many challenges for optical lithography.
To make photomasks with high overlay accuracy, “Charge Dissipation Layer (CDL)” materials have been developed. Commercialized CDL materials can reduce electro-static charging on the surface of resist during electron beam exposure. However, some side effects are introduced to the mask-making process. The resolution performance of chemically amplified resist (CAR) is degraded owing to acid diffusion from the CDL components to the resist surface. A newly developed CDL solved this problem by controlling the acid diffusion. A positive-tone CAR with the CDL showed no resolution degradation, and performance was maintained for over 30 days after coating CDL and resist. Furthermore, the CDL has been evaluated on a negative-tone CAR which is more sensitive to CDL.
A novel adhesion promoting material has been developed to prevent very small resist patterns from collapse. One target for the development of the material is to make an advanced negative-tone mask with 40 nm sub-resolution assist features (SRAF). The SRAF on photomasks has become shorter and shorter as well as narrowing. The 2-dimensional resist patterns easily collapse during the resist developing process. Resist under-coating material controlled the surface condition on a chrome absorber film, and it improved the resolution of the SRAF. As a result, SRAFs of 46nm width and 200nm length were achieved using the material. A negative-tone resist on the under-coating layer demonstrated 35 nm isolated line patterns on a mask without pattern collapse.
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