Stacking technique of nanopattern array is gathering attention to fabricate next generation data storage such as plasmon
memory. This technique provides multi- overlaid nanopatterns which made by nanoimprint lithography. In the structure,
several metal nanopatterned layer and resin layer as a spacer are overlaid alternately. The horizontal position of
nanopatterns to under nanopatterns and thickness of resin layer as spacer should be controlled accurately, because these
parameters affect reading performance and capacity of plasmon memory. In this study, we developed new alignment
mark to fabricate multi- overlaid nanopatterns. The alignment accuracy with the order of 300 nm was demonstrated for
Ag nanopatterns in 2 layers. The alignment mark can measure the thickness of spacer. The relationship of spacer
thickness and position of scale bar on the alignment mark was measured. The usefulness of the alignment mark for highdensity
plasmon memory is shown.
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