We have developed a 389-nm frequency-doubled nanosecond-pulsed coherent light source with injection seeding for nuclear polarization of 3He atoms with 23S→33P and then suggested four kinds of spectroscopic methods with the injection-seeded light source. With this light source, we have conducted saturated absorption spectroscopy of metastable 3He atoms. As a result, an accurate resonance frequency of 770682 GHz and a dip width of 1.7 GHz of metastable 3He atoms are obtained. Therefore, the linewidth of our injection-seeded light source can be estimated at 65 MHz or 1.7 GHz. Our light source has potential for the polarization of 3He due to high-peak power and narrow linewidth of the injection-seeded light source.
We have developed the advanced technology for the frequency stabilization of a nanosecond deep-ultraviolet coherent
light source toward manipulating semiconductor atoms by injection locking with a single-frequency Ti:sapphire laser. In
order to stabilize injection seeding, we utilized the small change of the build-up time of the slave-laser pulse. The injection-locked laser can acquire significant performances of both narrow linewidth and high peak power. As a result, the fluctuation of the wavelength decreases from 2.1 GHz to 10 MHz due to the injection seeding. The laser performance indicates various potentials useful for manipulating semiconductor atoms.
We investigate optical properties of semiconductor atoms by absorption and
emission spectroscopies. Each of 3PJ' - 3P°J transitions except for J'=0 (the total angular
momentum of the ground state) is confirmed in broad emission spectra in a hollow-cathode
discharge in which negative electrodes incorporate semiconductor atoms that are evaporated
in the discharge. For finer spectroscopies, the 3P1 - 3P°0 cyclic transition for laser cooling of
silicon atoms at 252 nm is investigated in absorption spectra with a single-frequency tunable
deep-UV coherent light source, which has a high potential for controlling their nuclear spins.
A frequency-tripled nanosecond pulsed Ti:sapphire laser injection-seeded by a cw single-frequency
Ti:sapphire laser has been developed. The single-frequency stability of this light source is demonstrated
successfully by matching between the optical frequency of the seed laser and the cavity frequency of the
slave laser with build-up time electronics. It is also discussed with fluctuations of the wavelength of the
Ti:sapphire laser and the optogalvanic signal of silicon atoms. This unique light source opens the door to
silicon atom optics, which is capable of manipulating atoms isotopically for novel material processing.