Prof. Tamotsu Hashizume Profile

Prof. Tamotsu Hashizume

at Hokkaido Univ

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Author

Publications (3)

Proceedings Article | 5 March 2021 Presentation + Paper

HfSiOx-gate GaN MOS-HEMTs for RF power transistor

Tamotsu Hashizume, Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato

Proceedings Volume 11686, 1168628 (2021) https://doi.org/10.1117/12.2577403

KEYWORDS: Field effect transistors, Transistors, Molybdenum, Gallium nitride, Personal digital assistants, Atomic layer deposition, Interfaces, Diodes, Dielectrics, Chemical species

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Proceedings Article | 26 February 2016 Paper

Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions

Taketomo Sato, Yusuke Kumazaki, Masaaki Edamoto, Masamichi Akazawa, Tamotsu Hashizume

Proceedings Volume 9748, 97480Y (2016) https://doi.org/10.1117/12.2211964

KEYWORDS: Etching, Field effect transistors, Transistors, Interfaces, Gallium nitride, Heterojunctions, Electrochemical etching, Oxides, Scanning electron microscopy, Atomic force microscopy, Oxidation, Electrodes, Transmission electron microscopy

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Proceedings Article | 19 February 2009 Paper

Surface control of GaN alloys for photonic and electronic devices

Tamotsu Hashizume, Nanako Shiozaki, Kota Ohi

Proceedings Volume 7216, 72160U (2009) https://doi.org/10.1117/12.807587

KEYWORDS: Field effect transistors, Gallium nitride, Electrodes, Control systems, Capacitance, Radiation effects, Photonic devices, Electronic components, Oxides, Oxidation

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