Dr. Thaddeus Dziura Profile

Dr. Thaddeus Dziura

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Publications (17)

Proceedings Article | 2 April 2014 Paper

Novel metrology methods for fast 3D characterization of directed self-assembly (DSA) patterns for high volume manufacturing

Chandra Sarma, Benjamin Bunday, Aron Cepler, Ted Dziura, JiHoon Kim, Guanyang Lin, Jian Yin

Proceedings Volume 9050, 90500O (2014) https://doi.org/10.1117/12.2046785

KEYWORDS: Semiconducting wafers, Scatterometry, Metrology, Polymethylmethacrylate, Bridges, Data modeling, Critical dimension metrology, Picosecond phenomena, Line edge roughness, Directed self assembly

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Proceedings Article | 2 April 2014 Paper

Spectroscopic critical dimension technology (SCD) for directed self assembly

Senichi Nishibe, Thaddeus Dziura, Venkat Nagaswami, Roel Gronheid

Proceedings Volume 9050, 90502U (2014) https://doi.org/10.1117/12.2046647

KEYWORDS: Single crystal X-ray diffraction, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Etching, Directed self assembly, Scatterometry, Silicon, Inspection, Polymethylmethacrylate

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Proceedings Article | 2 April 2010 Paper

Use of multiple azimuthal angles to enable advanced scatterometry applications

Matthew Sendelbach, Alok Vaid, Pedro Herrera, Ted Dziura, Michelle Zhang, Arun Srivatsa

Proceedings Volume 7638, 76381G (2010) https://doi.org/10.1117/12.846692

KEYWORDS: Metals, Scatterometry, Silicon, Transmission electron microscopy, Metrology, Semiconducting wafers, Critical dimension metrology, Data modeling, Back end of line, Semiconductors

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Proceedings Article | 24 March 2008 Paper

Opportunities and challenges for optical CD metrology in double patterning process control

Daniel Wack, John Hench, Leonid Poslavsky, John Fielden, Vera Zhuang, Walter Mieher, Ted Dziura

Proceedings Volume 6922, 69221N (2008) https://doi.org/10.1117/12.772997

KEYWORDS: Metrology, Process control, Etching, Critical dimension metrology, Systems modeling, Spectroscopy, Double patterning technology, Optical lithography, Performance modeling, Reflectometry

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Proceedings Article | 24 March 2008 Paper

Measurement of high-k and metal film thickness on FinFET sidewalls using scatterometry

Thaddeus Dziura, Benjamin Bunday, Casey Smith, Muhammad Hussain, Rusty Harris, Xiafang Zhang, Jimmy Price

Proceedings Volume 6922, 69220V (2008) https://doi.org/10.1117/12.773593

KEYWORDS: Semiconducting wafers, Metals, Scatterometry, Dielectrics, Tin, Metrology, Data modeling, Silicon, Oxides

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Proceedings Article | 24 March 2006 Paper

Scatterometry measurements of line end shortening structures for focus-exposure monitoring

Kelvin Hung, Yung Feng Cheng, Jie Wei Sun, Benjamin Szu-Min Lin, Steven Fu, Thaddeus Dziura, Marcelo Cusacovich, Walter Mieher

Proceedings Volume 6152, 61521W (2006) https://doi.org/10.1117/12.655746

KEYWORDS: Single crystal X-ray diffraction, Semiconducting wafers, Data modeling, Scatterometry, Finite element methods, Lithography, Metrology, Process control, Photoresist processing, Scatter measurement

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Proceedings Article | 17 May 2005 Paper

Feasibility of improving CD-SEM-based APC system for exposure tool by spectroscopic-ellipsometry-based APC system

Wen-Kuang Lin, Shih-Hsien Liao, Ronghao Tsai, Mike Yeh, Calvino Hsieh, Y. Yu, Benjamin Szu-Min Lin, Steven Fu, Thaddeus Dziura

Proceedings Volume 5755, (2005) https://doi.org/10.1117/12.598983

KEYWORDS: Critical dimension metrology, Single crystal X-ray diffraction, Etching, Scanners, Metrology, Process control, Spectroscopy, Control systems, Switching, Spectroscopic ellipsometry

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Lot-to-lot ADI CD data are generally used to tighten the variation of exposure energy of an exposure tool through an APC feedback system. With decreasing device size, the process window of an exposure tool becomes smaller and smaller. Therefore, whether the ADI CD can reveal the real behavior of a scanner or not becomes more and more a critical question, especially for the polysilicon gate layer. CD-SEM has generally been chosen as the metrology tool for this purpose. Because of the limitations of top-down CD-SEMs, an APC system could be easily misled by improper ADI CD data if the CD data were measured on a T-topped photo resist. ArF resist shrinkage and line edge roughness are also traditional causes for improper CD feedback if the user did not operate the CDSEM carefully. Another candidate for this APC application is spectroscopic-ellipsometry-based scatterometry technology, commonly referred to as SpectraCD. In recent studies, SpectraCD was proven to be able to reveal profile variation with excellent stability. The feasibility of improving a CDSEM-based APC system by a SpectraCD-based system in a high-volume manufacturing fab is therefore worthy of study. This study starts from an analysis of the historical data for the polysilicon ADI CD of a 130 nm product. Two different sets of CD measured from the two different metrology tools were analyzed. In the fab, CDSEM was the metrology tool chosen for the APC feedback. The CD data measured by SpectraCD over a 2 month timeframe were plotted as a CD trend chart of the specific exposure tool. There are several trend-ups and trend-downs observed, even though the overall CD range is small. After a series of analyses, the exposure tool has been proven to be quite stable and the CD data measured by SpectraCD also reveal the real behavior of the exposure tool correctly. The scanner is shown to have been misled by improper CD feedback. In comparison with CDSEM, the linearity of the correlation between ADI and AEI CDs, which represents the consistence of etch bias, can also be improved from 0.4 to 0.8 by SpectraCD. The root causes are still under investigation, but one suspected reason is related to resist profile. All the analysis results will be reported in this paper. The data provided sufficient motivation for switching the APC feedback system of the fab from a CDSEM-based system to a SpectraCD-based system. The results of the new APC system will also be discussed.

Proceedings Article | 12 May 2005 Paper

Proximity matching for 193 nm scanner using scatterometry

WenZhan Zhou, Jin Yu, James Lo, Johnson Liu, Henry Tjhin, Thaddeus Dziura

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601574

KEYWORDS: Single crystal X-ray diffraction, Scanners, Scatterometry, Optical proximity correction, Data modeling, Diffusion, Photoresist processing, Optical lithography, Spectroscopy, Physics

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Proceedings Article | 24 May 2004 Paper

Spectroscopic ellipsometry-based scatterometry for depth and linewidth measurements of polysilicon-filled deep trenches

Thomas Hingst, Manfred Moert, Peter Reinig, Elke Backen, Rene Dost, Peter Weidner, John Hopkins, Ted Dziura, Assim Elazami, Regina Freed

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535646

KEYWORDS: Scatterometry, Oxides, Atomic force microscopy, Semiconducting wafers, 3D metrology, Silicon, Process control, Scatter measurement, 3D modeling, Etching

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Proceedings Article | 24 May 2004 Paper

Capability of spectroscopic ellipsometry-based profile metrology for detecting the profile excursion of polysilicon gate

Mike Yeh, Shu-Ping Fang, Bo-Jau Tsau, Chih-Chung Huang, Benjamin Lin, Steven Fu, Jay Chen, Regina Freed, Ted Dziura, Mike Slessor

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536269

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Metrology, Etching, Spectroscopic ellipsometry, Cadmium, Scanning electron microscopy, Transistors, Atomic force microscopy, Single crystal X-ray diffraction

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Proceedings Article | 1 July 2003 Paper

Advanced process control for polysilicon gate etching using integrated optical CD metrology

Gowri Kota, Jorge Luque, Vahid Vahedi, Ashok Khathuria, Thaddeus Dziura, Ady Levy

Proceedings Volume 5044, (2003) https://doi.org/10.1117/12.487635

KEYWORDS: Critical dimension metrology, Etching, Scanning electron microscopy, Semiconducting wafers, Process control, Transistors, Metrology, Wafer-level optics, Cadmium, Integrated optics

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Proceedings Article | 16 July 2002 Paper

Spectroscopic CD metrology for sub-100-nm lithography process control

Walter Mieher, Thaddeus Dziura, Xuemei Chen, Paola DeCecco, Ady Levy

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473424

KEYWORDS: Single crystal X-ray diffraction, Semiconducting wafers, Photoresist processing, Lithography, Critical dimension metrology, Process control, Metrology, Spectroscopy, Wafer testing, Reticles

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Proceedings Article | 2 June 1994 Paper

Effect of active-region size on the high-speed modulation of vertical-cavity surface-emitting lasers with lateral injection

Thaddeus Dziura, Y. Yang, Mr. Fernandez, S. Wang

Proceedings Volume 2147, (1994) https://doi.org/10.1117/12.177212

KEYWORDS: Modulation, Diffusion, Data modeling, Vertical cavity surface emitting lasers, Capacitance, Instrument modeling, Resistance, Zinc, Mirrors, Ions

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Proceedings Article | 1 June 1994 Paper

Wafer scale testing of vertical cavity surface-emitting laser arrays

Thaddeus Dziura, S. Wang

Proceedings Volume 2148, (1994) https://doi.org/10.1117/12.176642

KEYWORDS: Vertical cavity surface emitting lasers, Semiconducting wafers, Modulation, Near field, Wafer testing, Wafer-level optics, Laser development, Photonic integrated circuits, Field effect transistors, Data storage

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Proceedings Article | 2 December 1992 Paper

Modulation characteristics of vertical-cavity surface-emitting lasers

S. Wang, Thaddeus Dziura, Y. Yang

Proceedings Volume 1703, (1992) https://doi.org/10.1117/12.138403

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Resistance, Laser damage threshold, Distortion, Semiconducting wafers, Diffusion, Laser development, Zinc, Gallium arsenide

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Proceedings Article | 1 July 1991 Paper

Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser

Y. Yang, Thaddeus Dziura, S. Wang, Mr. Fernandez, G. Du, Shyh Wang

Proceedings Volume 1418, (1991) https://doi.org/10.1117/12.43836

KEYWORDS: Gallium arsenide, Continuous wave operation, Quantum wells, Semiconductor lasers, Zinc, Mirrors, Resistance, Diffusion, Laser applications, Laser damage threshold

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Proceedings Article | 1 June 1990 Paper

High-modulation-rate potential for surface emitter laser diode arrays

Thaddeus Dziura, Y. Yang, S. Wang

Proceedings Volume 1217, (1990) https://doi.org/10.1117/12.18151

KEYWORDS: Semiconductor lasers, Modulation, Optoelectronics, Mirrors, Semiconducting wafers, Signal processing, Antennas, Photonic integrated circuits, Liquid phase epitaxy, Vertical cavity surface emitting lasers

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Showing 5 of 17 publications

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