Mr. Tenghui Ouyang Profile

Tenghui Ouyang

at Sun Yat-sen Univ

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Proceedings Article | 10 October 2020 Poster

MoTe2-based 2D avalanche photodetector with low dark current

Tenghui Ouyang, Chen Huanjun

Proceedings Volume 11556, 115560Y (2020) https://doi.org/10.1117/12.2575319

KEYWORDS: Avalanche photodetectors, Photodetectors, Electrodes, Electroluminescent displays, Optoelectronic devices

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Two-dimensional (2D)-material-based photodetectors have recently received great attention due to their potential as ultrathin and ultra-highly integrated devices. In this study, we demonstrated the application of MoTe2 as electrode material for photodetectors. An all-2D photodetector based on WS2 and MoTe2 is fabricated. Owing to the large Schottky barrier formed between WS2 and MoTe2, the avalanche eﬀect can be realized because a large electrical ﬁeld can be applied across the MoTe2–WS2–MoTe2 junctions before breakdown. Additionally, because of the existence of Schottky barrier, the dark current of device is greatly reduced. As a result, we achieved the enhanced performance of the ultrathin all-2D photodetector, with a photoresponsivity of 6.02 AW-1, an external quantum eﬃciency of 1406%, an avalanche gain of 587, and a low dark current of 93 pA in the broadband spectrum range from visible-to-NIR wavelengths.

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