Terrence E. Zavecz
President at TEA Systems Corp
SPIE Involvement:
Author | Instructor
Publications (17)

Proceedings Article | 30 October 2007 Paper
Proc. SPIE. 6730, Photomask Technology 2007
KEYWORDS: Reticles, Air contamination, Metrology, Wavefronts, Semiconducting wafers, Deep ultraviolet, Scanners, Lithography, Inspection, Contamination

Proceedings Article | 26 March 2007 Paper
Proc. SPIE. 6520, Optical Microlithography XX
KEYWORDS: Image processing, Manufacturing, Process modeling, Photomasks, Optical proximity correction, Reticles, Data modeling, Semiconducting wafers, Design for manufacturing, Metrology

Proceedings Article | 26 March 2007 Paper
Proc. SPIE. 6520, Optical Microlithography XX
KEYWORDS: Reticles, Semiconducting wafers, Photomasks, Image processing, Manufacturing, Data modeling, Scanners, Metrology, Finite element methods, Resolution enhancement technologies

Proceedings Article | 24 March 2006 Paper
Proc. SPIE. 6152, Metrology, Inspection, and Process Control for Microlithography XX
KEYWORDS: Reticles, Optical proximity correction, Process control, Wavefronts, Resolution enhancement technologies, Semiconducting wafers, Photomasks, Critical dimension metrology, Photoresist materials, Metrology

Proceedings Article | 14 March 2006 Paper
Proc. SPIE. 6155, Data Analysis and Modeling for Process Control III
KEYWORDS: Reticles, Semiconducting wafers, Scanners, Optical proximity correction, Photomasks, Critical dimension metrology, Image processing, Photoresist materials, Data modeling, Structural design

Showing 5 of 17 publications
Course Instructor
SC621: Lithography Control and Characterization
How ready are we to efficiently use the new metrics of film thickness, side-wall angle, profile, line-edge-roughness and focus? These are all variables familiar to us but never before have they been provided so abundantly and provided in so many formats! A decade ago many lithographers addressed the needs of production and process development with little or no automated metrology. Today it's common to have up to six or more types of metrology available for providing the raw data needed to control operations and adjust for product or process changes. Lithographers work in an industry that has lived by the precepts of statistical control. This course addresses advanced techniques for production control and tool characterization/ matching using focus, overlay and feature profile models. Models and their interactions for metrology, aberrations, process window and distortions will be addressed. Through theory, statistics and real data examples we will consider when to apply each as well as the advantages and potential pitfalls of the each technique. The course addresses and develops process, metrology and spatial models to measure these interactions from a control standpoint using both classic metrics and new techniques in focus, scatterometric and CD-SEM data implementation.
SC110: Model-based Exposure Tool Characterization, Matching, and APC Methods
How ready are you as a lithographer to meet the challenges of a technology confronted by increased technical challenges and dwindling operational margins? Optical lithography will carry the industry through the first decade of the new millennium. New tools such as variable numeric aperture, partial coherence, active lens stacks and individual control of scan, platen, chuck and optics tilt will allow the engineer to fine tune stepper and scanner performance as never before. Yet, these new tools also contribute unexpected interactions in the focus budget, aberrations and distortions present in lithography. Real time control of the production margin is best managed by a combination of experience-based models and performance simulation from sparse data metrology. But what criteria are best employed in these environments and how can the engineer control production without control-loop runaway? The next decade will require the lithographer to clearly understand key areas: equipment setup, tuning, calibration and matching; lens distortions that influence optical train performance and multiple tool matching; focal plane aberrations and their influence on critical dimension control; and the influence of the process and reticle tool-set on aberration and production control. This course addresses advanced techniques for lithography equipment characterization, optimization and matching. Through theory, statistics and real data examples we will consider when to apply each as well as the advantages and potential pitfalls of each technique.
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