Dr. Tetsuro Hanawa Profile

Dr. Tetsuro Hanawa

Senior Engineer at Renesas Technology Corp

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 1 April 2009 Paper

Paper

Defect reduction in non-topcoat resist by selective segregation removal step

Takuya Hagiwara, Mamoru Terai, Takeo Ishibashi, Tomofumi Miyauchi, Shinya Hori, Teruhiko Kumada, Tomoya Kumagai, Atsushi Sawano, Kosuke Doi, Takeshi Matsunobe, Naoki Man, Hirofumi Seki, Yusaku Tanahashi, Tetsuro Hanawa

Proceedings Volume 7273, 727324 (2009) https://doi.org/10.1117/12.813643

KEYWORDS: Polymers, Photoresist processing, Semiconducting wafers, Lithography, Coating, Photomasks, Chemical analysis, Critical dimension metrology, Fluorine, Scanners

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Proceedings Article | 16 March 2009 Paper

Paper

A proposed image intensity expressing local irradiance

Shuji Nakao, Itaru Kanai, Shinroku Maejima, Mitsuru Okuno, Naohisa Tamada, Junjiro Sakai, Akira Imai, Tetsuro Hanawa, Kazuyuki Suko

Proceedings Volume 7274, 72742Z (2009) https://doi.org/10.1117/12.812203

KEYWORDS: Polarization, Photomasks, Electromagnetism, Image filtering, Diffraction, Optical lithography, Magnetism, Lithography, Apodization, Radiometric corrections

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Proceedings Article | 19 May 2008 Paper

Paper

Application of super-diffraction-lithography (SDL) for advanced logic

Shuji Nakao, Shinroku Maejima, Yuko Mitarai, Takuya Hagiwara, Sachiko Ogawa, Tetsuro Hanawa, Kazuyuki Suko

Proceedings Volume 7028, 70283G (2008) https://doi.org/10.1117/12.793123

KEYWORDS: Photomasks, Critical dimension metrology, Photography, Resolution enhancement technologies, Printing, Immersion lithography, Logic, Transmittance, Scanning electron microscopy, Image processing

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Proceedings Article | 26 March 2008 Paper

Paper

Improvements of adhesion and hydrophobicity of wafer bevel in water immersion lithography

Takeo Ishibash, Mamoru Terai, Takuya Hagiwara, Teruhiko Kumada, Tetsuro Hanawa, Yoko Takebe, Osamu Yokokoji, Tomoharu Fujiwara, Hiroshi Akiyama

Proceedings Volume 6923, 69231V (2008) https://doi.org/10.1117/12.771794

KEYWORDS: Semiconducting wafers, Coating, Silicon, Head-mounted displays, Immersion lithography, Manufacturing, Fluorine, Particles, Calcium, Prototyping

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Proceedings Article | 12 March 2008 Paper

Paper

Quasi-iso-focal hole pattern formation by Checker-Board PSM (CB-PSM)

S. Nakao, S. Maejima, A. Minamide, H. Saitoh, T. Hanawa, K. Suko

Proceedings Volume 6924, 692432 (2008) https://doi.org/10.1117/12.771615

KEYWORDS: Optical proximity correction, Photomasks, Opacity, Scanning electron microscopy, Photography, Optical lithography, Image transmission, Imaging systems, Image acquisition, Chromium

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Proceedings Article | 7 March 2008 Paper

Paper

Double patterning using dual spin-on Si containing layers with multilayer hard mask process

Mamoru Terai, Takeo Ishibashi, Masaaki Shinohara, Kazumasa Yonekura, Takuya Hagiwara, Tetsuro Hanawa, Teruhiko Kumada

Proceedings Volume 6924, 692420 (2008) https://doi.org/10.1117/12.771855

KEYWORDS: Etching, Double patterning technology, Silicon, Optical lithography, Coating, Photomasks, FT-IR spectroscopy, Photoresist processing, Silica, Scanning electron microscopy

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Proceedings Article | 2 April 2007 Paper

Paper

Mechanism of immersion specific defects with high receding-angle topcoat

Mamoru Terai, Teruhiko Kumada, Takeo Ishibashi, Takuya Hagiwara, Tetsuro Hanawa, Tomoyuki Ando, Takeshi Matsunobe, Kazuyuki Okada, Yuichi Muraji, Kazuhiro Yoshikawa, Naoki Man

Proceedings Volume 6519, 65191S (2007) https://doi.org/10.1117/12.711058

KEYWORDS: Water, Bridges, Immersion lithography, Semiconducting wafers, Digital watermarking, Surface properties, Polymers, Chemical analysis, Defect inspection, Standards development

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Proceedings Article | 2 April 2007 Paper

Paper

Development of high-performance multi-layer resist process with hardening treatment

Yoshiharu Ono, Takeo Ishibashi, Atsumi Yamaguchi, Tetsuro Hanawa, Masahiro Tadokoro, Kazunori Yoshikawa, Kazumasa Yonekura, Keiko Matsuda, Takeshi Matsunobe, Yasushi Fujii, Takeshi Tanaka

Proceedings Volume 6519, 65192O (2007) https://doi.org/10.1117/12.707615

KEYWORDS: System on a chip, Plasma treatment, Refractive index, Etching, Reflectivity, Carbon, Plasma, FT-IR spectroscopy, Raman spectroscopy, Photoresist processing

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Proceedings Article | 26 March 2007 Paper

Paper

OPC-free on-grid fine random hole pattern formation utilizing double resist patterning with double RETs

Shuji Nakao, Shinroku Maejima, Takeshi Yamamoto, Yoshiharu Ono, Junjiro Sakai, Atsumi Yamaguchi, Akira Imai, Tetsuro Hanawa, Kazuyuki Sukoh

Proceedings Volume 6520, 65203W (2007) https://doi.org/10.1117/12.711055

KEYWORDS: Optical lithography, Scanning electron microscopy, Photography, Double patterning technology, Photomasks, Photoresist processing, Resolution enhancement technologies, Argon, Ion implantation, Current controlled current source

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Proceedings Article | 22 March 2007 Paper

Paper

Defect transfer from immersion exposure process to post processing and defect reduction using novel immersion track system

Osamu Miyahara, Takeshi Shimoaoki, Shinya Wakamizu, Junichi Kitano, Yoshiharu Ono, Shinroku Maejima, Tetsuro Hanawa, Kazuyuki Suko

Proceedings Volume 6519, 651924 (2007) https://doi.org/10.1117/12.711354

KEYWORDS: Etching, Immersion lithography, Photoresist processing, Semiconducting wafers, Lithography, Thin film coatings, Scanning electron microscopy, Defect inspection, Photography, Lens design

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As a promising way to scale down semiconductor devices, 193-nm immersion exposure lithography is being developed at a rapid pace and is nearing application to mass production. This technology allows the design of projection lens with higher numerical aperture (NA) by filling the space between the projection lens and the silicon wafer with a liquid (de-ionized water). However, direct contact between the resist film and water during exposure creates a number of process risks. There are still many unresolved issues and many problems to be solved concerning defects that arise in 193-nm immersion lithography. The use of de-ionized water during the exposure process in 193-nm immersion lithography can lead to a variety of problems. For example, the trapping of microscopic air bubbles can degrade resolution, and residual water droplets left on the wafer surface after immersion exposure can affect resolution in the regions under those droplets. It has also been reported that the immersion of resist film in de-ionized water during exposure can cause moisture to penetrate the resist film and dissolve resist components, and that immersion can affect critical dimensions as well as generate defects. The use of a top coat is viewed as one possible way to prevent adverse effects from the immersion of resist in water, but it has been reported that the same problems may occur even with a top coat and that additional problems may be generated, such as the creation of development residues due to the mixing of top coat and resist. To make 193-nm immersion lithography technology practical for mass production, it is essential that the above defect problems be solved. Importance must be attached to understanding the conditions that give rise to residual defects and their transference in the steps between lithography and the etching/cleaning processes. In this paper, we use 193-nm immersion lithography equipment to examine the transference (traceability) of defects that appear in actual device manufacturing. It will be shown that defect transfer to the etching process can be significantly reduced by the appropriate use of defect-reduction techniques.

Proceedings Article | 20 October 2006 Paper

Paper

A novel Alt-PSM structure: isn't this an embedded Atten-PSM?

S. Nakao, K. Hosono, S. Maejima, K. Narimatsu, T. Hanawa, K. Suko

Proceedings Volume 6349, 63492Q (2006) https://doi.org/10.1117/12.692820

KEYWORDS: Photomasks, Critical dimension metrology, Phase shifts, Image transmission, Chromium, Quartz, Printing, Logic devices, Scanning electron microscopy, Image quality

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Proceedings Article | 11 April 2006 Paper

Paper

Studies on immersion defects using mimic immersion experiments

Tetsuro Hanawa, Toshifumi Suganaga, Takeo Ishibashi, Shinroku Maejima, Koichiro Narimatsu, Kazuyuki Suko, Mamoru Terai, Teruhiko Kumada, Junichi Kitano

Proceedings Volume 6153, 61531O (2006) https://doi.org/10.1117/12.655568

KEYWORDS: Thin film coatings, Immersion lithography, Lithography, Semiconducting wafers, Scanners, Photoresist processing, Contamination, Defect inspection, Chemical analysis, Absorption

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Proceedings Article | 29 March 2006 Paper

Paper

Newly developed RELACS materials and process for 65 nm nodes

Mamoru Terai, Teruhiko Kumada, Takeo Ishibashi, Tetsuro Hanawa, Noboru Satake, Yusuke Takano

Proceedings Volume 6153, 61532I (2006) https://doi.org/10.1117/12.651242

KEYWORDS: Semiconducting wafers, Lithography, Etching, Photoresist processing, Polymers, Materials processing, Resolution enhancement technologies, Resistance, Optical lithography, Photomasks

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Proceedings Article | 29 March 2006 Paper

Paper

Studies of the mechanism for immersion specific defects

Takeo Ishibashi, Tetsuro Hanawa, Toshifumi Suganaga, Koichiro Narimatsu, Kazuyuki Suko, Mamoru Terai, Teruhiko Kumada, Tomoyuki Ando

Proceedings Volume 6153, 61533I (2006) https://doi.org/10.1117/12.654756

KEYWORDS: Ions, Semiconducting wafers, Chemical analysis, Statistical analysis, Immersion lithography, Technetium, Contamination, Photoresist processing, Adsorption, Neodymium

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Proceedings Article | 21 March 2006 Paper

Paper

Verification of optical proximity effect in immersion lithography

Toshifumi Suganaga, Shinroku Maejima, Tetsuro Hanawa, Takeo Ishibashi, Shuji Nakao, Seiichiro Shirai, Koichiro Narimatsu, Kazuyuki Suko, Kenichi Shiraishi, Yuki Ishii, Tomoyuki Ando, Katsumi Ohmori

Proceedings Volume 6154, 61544K (2006) https://doi.org/10.1117/12.655526

KEYWORDS: Immersion lithography, Technetium, Lithography, Resonance energy transfer, Polymers, Manufacturing, Scanners, Scanning electron microscopy, Optics manufacturing, Optical coatings

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Proceedings Article | 28 June 2005 Paper

Paper

Requirements for mask technology from the view point of SOC and FLASH memory trends

Akira Imai, Noboyuki Yoshioka, Tetsuro Hanawa, Koichiro Narimatsu, Kunihiro Hosono, Kazuyuki Suko

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617033

KEYWORDS: Photomasks, Design for manufacturing, Lithography, Semiconductors, System on a chip, Maskless lithography, Optical proximity correction, Semiconducting wafers, Polarization, Design for manufacturability

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Proceedings Article | 7 July 1997 Paper

Paper

Estimation of optical proximity effect caused by mask fabrication error

Kazuya Kamon, Tetsuro Hanawa, Koichi Moriizumi

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276045

KEYWORDS: Photomasks, Mask making, Error analysis, Optical proximity correction, Lithography, Spindles, Opacity, Beam shaping, Laser systems engineering, Binary data

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Proceedings Article | 7 June 1996 Paper

Paper

Fast and accurate optical proximity correction based on aerial image simulation

Tetsuro Hanawa, Kazuya Kamon, Akihiro Nakae, Shuji Nakao, Koichi Moriizumi

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240929

KEYWORDS: Optical proximity correction, Photomasks, Semiconducting wafers, Critical dimension metrology, Binary data, Diffraction, Optical lithography, Lithographic illumination, Imaging systems, Scanning electron microscopy

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Proceedings Article | 15 September 1993 Paper

Paper

Study on the over-top-coating suppressing surface insoluble layer generation for chemical amplification resist

Teruhiko Kumada, Youko Tanaka, Akemi Ueyama, Shigeru Kubota, Hiroshi Koezuka, Tetsuro Hanawa, Hiroaki Morimoto

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154764

KEYWORDS: Coating, Polymers, Natural surfaces, Diffusion, Excimer lasers, Water, Chemical species, Photoresist processing, X-rays, Photoemission spectroscopy

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Proceedings Article | 1 July 1991 Paper

Paper

Improvement of focus and exposure latitude by the use of phase-shifting masks for DUV applications

Maaike Op de Beeck, Akira Tokui, Masato Fujinaga, Nobuyuki Yoshioka, Kazuya Kamon, Tetsuro Hanawa, Katsuhiro Tsukamoto

Proceedings Volume 1463, (1991) https://doi.org/10.1117/12.44781

KEYWORDS: Phase shifts, Photomasks, Metals, Lithium, Optical lithography, Quartz, Mask making, Computer aided design, Deep ultraviolet, Electron beam lithography

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Showing 5 of 20 publications

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