Dr. Theodore M. Bloomstein Profile

Dr. Theodore M. Bloomstein

Staff Member at MIT Lincoln Lab

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Author

Publications (20)

Proceedings Article | 5 November 2005 Paper

Vectorial effects in subwavelength mask imaging

Wen-Hao Cheng, Jeff Farnsworth, Theodore Bloomstein, Andrew Grenville

Proceedings Volume 5992, 599218 (2005) https://doi.org/10.1117/12.632372

KEYWORDS: Photomasks, Diffraction, Polarization, Pellicles, Chromium, Optical proximity correction, Binary data, Reticles, 3D modeling, Diffraction gratings

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Proceedings Article | 12 May 2005 Paper

A 157-nm immersion microstepper

M. Switkes, T. Bloomstein, M. Rothschild, E. Arriola, T. Morrison

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.602585

KEYWORDS: Lithography, Lens design, Semiconducting wafers, Photomasks, Liquids, Microfluidics, Actuators, Microfluidic imaging, Sensors, Immersion lithography

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Proceedings Article | 12 May 2005 Paper

Experimental measurements of diffraction for periodic patterns by 193-nm polarized radiation compared to rigorous EMF simulations

Marylyn Bennett, Andrew Grenville, Scott Hector, Shane Palmer, Leonardus Leunissen, Vicky Philipsen, Theodore Bloomstein, Dennis Hardy, Mordechai Rothschild, James Hilfiker

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600098

KEYWORDS: Photomasks, Diffraction, Sensors, Polarization, Binary data, Diffraction gratings, Phase shifts, Polarizers, Laser beam diagnostics, Attenuators

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Proceedings Article | 28 May 2004 Paper

Scattering in liquid immersion lithography

Michael Switkes, Theodore Bloomstein, Roderick Kunz, Mordechai Rothschild, J. Ruberti, T. Shedd, Michael Yeung

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534194

KEYWORDS: Liquids, Scattering, Immersion lithography, Rayleigh scattering, Interfaces, Water, Scatter measurement, Raman scattering, Semiconducting wafers, Lithography

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Proceedings Article | 28 May 2004 Paper

Photo-induced changes in 157-nm optical coatings

Vladimir Liberman, Theodore Bloomstein, Mordechai Rothschild, Stephen Palmacci, Jan Sedlacek, Andrew Grenville

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534190

KEYWORDS: Thin films, Surface roughness, Thin film coatings, Atomic force microscopy, Optical coatings, Spectroscopic ellipsometry, Data modeling, Ellipsometry, Fluorine, X-rays

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SPIE Journal Paper | 1 April 2004

Stereolithographic patterning of diazonaphthoquinone/novolac photoresist

Theodore Bloomstein, Stephen Palmacci, Roderick Kunz, Mordechai Rothschild

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1668270

KEYWORDS: Photoresist materials, Ozone, Picture Archiving and Communication System, Photoresist developing, Optical lithography, Coating, Modulation, Photoresist processing, Solids, Multilayers

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Proceedings Article | 26 June 2003 Paper

Contamination rates of optical surfaces at 157 nm: impurities outgassed from construction materials and from photoresists

Theodore Bloomstein, Jan Sedlacek, Stephen Palmacci, Dennis Hardy, Vladimir Liberman, Mordechai Rothschild

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485468

KEYWORDS: Oxygen, Contamination, Sulfur, Iodine, Photoresist materials, Antireflective coatings, Pulsed laser operation, Absorbance, Diffusion, Liquids

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Proceedings Article | 26 June 2003 Paper

Angle-resolved scattering measurements of polished surfaces and optical coatings at 157 nm

Theodore Bloomstein, Dennis Hardy, L. Gomez, Mordechai Rothschild

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485469

KEYWORDS: Scattering, Scatter measurement, Light scattering, Sensors, Point spread functions, Polishing, Antireflective coatings, Laser scattering, Atomic force microscopy, Surface roughness

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Proceedings Article | 30 July 2002 Paper

Contamination rates of optical surfaces at 157 nm in the presence of hydrocarbon impurities

Theodore Bloomstein, Vladimir Liberman, Mordechai Rothschild, Stephen Palmacci, D. Hardy, Jan Sedlacek

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474620

KEYWORDS: Contamination, Oxygen, Bioalcohols, Coating, Antireflective coatings, Absorption, Pulsed laser operation, Thin films, Fluorine, Silica

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Proceedings Article | 14 September 2001 Paper

Controlled contamination of optics under 157-nm laser irradiation

Theodore Bloomstein, Vladimir Liberman, Stephen Palmacci, Mordechai Rothschild

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435766

KEYWORDS: Contamination, Oxygen, Projection systems, Antireflective coatings, Laser irradiation, Ranging, Laser optics, Nitrogen, Coating, Optical components

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Proceedings Article | 14 September 2001 Paper

UV cleaning of contaminated 157-nm reticles

Theodore Bloomstein, Vladimir Liberman, Mordechai Rothschild, N. Efremow, D. Hardy, Stephen Palmacci

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435764

KEYWORDS: Oxygen, Reticles, Ultraviolet radiation, Lamps, Spectroscopy, Reflectivity, Surface roughness, Pellicles, Chromium, Silica

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Proceedings Article | 24 August 2001 Paper

Photoresist outgassing at 157 nm exposure

Stefan Hien, Steve Angood, Dominic Ashworth, Steve Basset, Theodore Bloomstein, Kim Dean, Roderick Kunz, Daniel Miller, Shashikant Patel, Georgia Rich

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436834

KEYWORDS: Fluorine, Polymers, Contamination, Oxygen, Photoresist materials, Plasma, Absorption, Silicon, Vacuum ultraviolet, Molecules

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Contamination of optical elements during photoresist exposure is a serious issue in optical lithography. The outgassing of photoresist has been identified as a problem at 248nm and 193nm in production because the organic films that can be formed on an exposure lens can cause transmission loss and sever image distortion. At these exposure energies, the excitation of the photo acid generator, formation of acid, and cleavage of the protecting group are highly selective processes. At 157nm, the exposure energy is much higher (7.9 eV compared to 6.4 eV at 193nm) and it is known from laser ablation experiments that direct laser cleavage of sigma bonds occurs. The fragments formed during this irradiation can be considered as effective laser deposition precursors even in the mid ppb level. In this study, methods to quantify photoresist outgassing at 157 nm are discussed. Three criteria have been set up at International SEMATECH to protect lens contamination and to determine the severity of photoresist outgassing. First, we measured film thickness loss as a function of exposure dose for a variety of materials. In a second test we studied the molecular composition of the outgassing fragments with an exposure chamber coupled to a gas chromatograph and a mass spectrometer detector. Our third method was a deposition test of outgassing vapors on a CaF₂ proof plate followed by analysis using VUV and X-ray photoelectron spectroscopies (XPS). With this technique we found deposits for many different resists. Our main focus is on F- and Si- containing resists. Both material classes form deposits especially if these atoms are bound to the polymer side chains. Whereas the F-containing films can be cleaned off under 157nm irradiation, cleaning of Si-containing films mainly produces SiO₂. Our cleaning studies of plasma deposited F-containing organic films on SiO₂ did not indicate damage of this surface by the possible formation of HF. Despite that we strongly recommend engineering measures to overcome contamination by resist, such as optimizing the purge flow between the final lens element and wafer surface or utilization of a lens pellicle.

Proceedings Article | 5 July 2000 Paper

Interference lithography at 157 nm

Michael Switkes, Theodore Bloomstein, Mordechai Rothschild

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389007

KEYWORDS: Lithography, Spatial coherence, Optical lithography, Photoresist materials, Silicon, Deep ultraviolet, Line edge roughness, Photoresist processing, Mirrors, Laser sources

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Proceedings Article | 5 July 2000 Paper

Laser cleaning of optical elements in 157-nm lithography

Theodore Bloomstein, Mordechai Rothschild, Vladimir Liberman, D. Hardy, N. Efremow, Stephen Palmacci

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388993

KEYWORDS: Oxygen, Absorption, Polymers, Polymer thin films, Nitrogen, Polymethylmethacrylate, Lithography, Thin films, Optical components, Vacuum ultraviolet

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Proceedings Article | 2 June 2000 Paper

Determination of optical properties of thin films and surfaces in 157-nm lithography

Vladimir Liberman, Theodore Bloomstein, Mordechai Rothschild

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386457

KEYWORDS: Reflection, Thin films, Data modeling, Lithography, Silicon, Absorption, Vacuum ultraviolet, Silicon films, Optical properties, Dielectrics

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Proceedings Article | 25 June 1999 Paper

Mechanical distortions in advanced optical reticles

Andrew Mikkelson, Roxann Engelstad, Edward Lovell, Theodore Bloomstein, Mark Mason

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351143

KEYWORDS: Photomasks, Chromium, Silica, Reticles, Magnesium fluoride, Mask making, Device simulation, Etching, Electron beam lithography, Transmittance

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Proceedings Article | 25 June 1999 Paper

Thermomechanical distortions of advanced optical reticles during exposure

Jaehyuk Chang, Amr Abdo, Byung-Kyu Kim, Theodore Bloomstein, Roxann Engelstad, Edward Lovell, William Beckman, John Mitchell

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351144

KEYWORDS: Reticles, Silica, Heat flux, Thermal modeling, Performance modeling, Convection, Photomasks, Calcium, Thermography, Optical lithography

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Proceedings Article | 25 June 1999 Paper

Optical materials and coatings at 157 nm

Theodore Bloomstein, Vladimir Liberman, Mordechai Rothschild, D. Hardy, Russell Goodman

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351106

KEYWORDS: Absorption, Silica, Optical coatings, Photomasks, Spectroscopy, Pellicles, Contamination, Thin films, Optical components, Magnesium fluoride

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Proceedings Article | 11 June 1999 Paper

Outlook for 157-nm resist design

Roderick Kunz, Theodore Bloomstein, D. Hardy, Russell Goodman, Deanna Downs, Jane Curtin

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350200

KEYWORDS: Absorbance, Absorption, Polymers, Lithography, Electrons, Photons, Extreme ultraviolet, Manufacturing, Chromophores, Etching

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Proceedings Article | 31 July 1998 Paper

Laser micromachining of silicon: a new technique for fabricating terahertz imaging arrays

Christopher Walker, Aimee Hungerford, Gopal Narayanan, Christopher Groppi, Theodore Bloomstein, Stephen Palmacci, Margaret Stern, Jane Curtin

Proceedings Volume 3357, (1998) https://doi.org/10.1117/12.317377

KEYWORDS: Waveguides, Silicon, Terahertz radiation, Etching, Computer aided design, Micromachining, Fabrication, Semiconductor lasers, Bolometers, Imaging arrays

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Showing 5 of 20 publications

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