Prof. Theodore D. Moustakas Profile

Prof. Theodore D. Moustakas

Joint Faculty Professor at Boston Univ Photonics Ctr

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Author

Publications (17)

Proceedings Article | 29 August 2017 Presentation + Paper

III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics

R. Paiella, H. Durmaz, F. Sudradjat, D. Nothern, G. Brummer, W. Zhang, J. Woodward, T. Moustakas

Proceedings Volume 10353, 103530I (2017) https://doi.org/10.1117/12.2274040

KEYWORDS: Terahertz radiation, Quantum wells, Photodetectors, Optoelectronics, Optoelectronic devices, Absorption, Semiconductor optoelectronics, Phonons, Crystals, Polarization

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Proceedings Article | 27 March 2013 Paper

Short period InN/nGaN superlattices: experiment versus theory

T. Suski, I. Gorczyca, G. Staszczak, X. Wang, N. Christensen, A. Svane, E. Dimakis, T. Moustakas

Proceedings Volume 8625, 86250J (2013) https://doi.org/10.1117/12.2004313

KEYWORDS: Indium nitride, Gallium nitride, Laser sintering, Superlattices, Quantum wells, Stereolithography, Gallium, Luminescence, Transition metals, Excitons

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Proceedings Article | 6 February 2012 Paper

Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations

Theodore Moustakas, Yitao Liao, Chen-kai Kao, Christos Thomidis, Anirban Bhattacharyya, Dipesh Bhattarai, Adam Moldawer

Proceedings Volume 8278, 82780L (2012) https://doi.org/10.1117/12.916213

KEYWORDS: Gallium, Aluminum nitride, External quantum efficiency, Gallium nitride, Light emitting diodes, Quantum wells, Nitrogen, Integrated optics, Deep ultraviolet, Electroluminescence

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Proceedings Article | 24 January 2011 Paper

Structural characterization of III-nitride materials and devices

David Smith, Lin Zhou, T. Moustakas

Proceedings Volume 7945, 79451E (2011) https://doi.org/10.1117/12.877470

KEYWORDS: Quantum wells, Indium nitride, Gallium nitride, Light emitting diodes, Diffraction, Transmission electron microscopy, Electron microscopes, Electron microscopy, Quantum dots, Interfaces

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Proceedings Article | 28 August 2010 Paper

Intersubband transitions in GaN-based quantum wells: a new materials platform for infrared device applications

Roberto Paiella, Kristina Driscoll, Yan Li, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Theodore Moustakas

Proceedings Volume 7808, 780807 (2010) https://doi.org/10.1117/12.861479

KEYWORDS: Quantum wells, Absorption, Waveguides, Infrared radiation, Ultrafast phenomena, Modulation, Switching, Transmittance, Fiber optic communications, Optical pumping

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Proceedings Article | 23 January 2010 Paper

Intersubband device applications of nitride quantum structures

Roberto Paiella, Kristina Driscoll, Yan Li, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Enrico Bellotti, Theodore Moustakas

Proceedings Volume 7608, 76080N (2010) https://doi.org/10.1117/12.836260

KEYWORDS: Quantum wells, Waveguides, Terahertz radiation, Switching, Gallium nitride, Modulation, Ultrafast phenomena, Gallium arsenide, Absorption, Luminescence

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Proceedings Article | 25 September 2007 Paper

Origin of the high photoconductive gain in AlGaN films

Theodore Moustakas, Mira Misra

Proceedings Volume 6766, 67660C (2007) https://doi.org/10.1117/12.736772

KEYWORDS: Gallium nitride, Sensors, Electrons, Photodetectors, Semiconductors, Aluminum, Gallium, Ultraviolet radiation, Silicon, Plasma

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Proceedings Article | 12 October 2006 Paper

Carrier localization and enhanced spontaneous emission due to plasma nanosheath formation in polar nanostructured materials

Spilios Riyopoulos, J. Cabalu, T. Moustakas

Proceedings Volume 6368, 63680M (2006) https://doi.org/10.1117/12.684935

KEYWORDS: Quantum wells, Polarization, Gallium nitride, Plasma, Nanostructuring, Luminescence, Doping, Internal quantum efficiency, Quantum efficiency, Transition metals

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Proceedings Article | 25 October 2005 Paper

Enhanced light extraction through nano-textured GaN interfaces via supercritical angle scattering

Spilios Riyopoulos, J. Cabalu, T. Moustakas

Proceedings Volume 6013, 60130G (2005) https://doi.org/10.1117/12.629518

KEYWORDS: Interfaces, Scattering, Light scattering, Gallium nitride, Ray tracing, Feature extraction, Reflection, Diffusion, Absorption, Dielectrics

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Proceedings Article | 25 March 2005 Paper

Nitride LEDs based on flat and wrinkled quantum wells

Jasper Cabalu, Christos Thomidis, Ian Friel, Theodore Moustakas

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.588360

KEYWORDS: Gallium nitride, Quantum wells, Luminescence, Light emitting diodes, Internal quantum efficiency, Quantum efficiency, Reflectivity, Excitons, Interfaces, Atomic force microscopy

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In this paper we propose a new type of nitride LED structure based on “wrinkled” rather than flat Multiple Quantum Wells (MQWs) grown along the polar [0001] direction. We show that this novel approach of employing “wrinkled” MQWs leads to the improvement of both the internal quantum efficiency as well the extraction efficiency. Identical GaN/AlGaN MQWs with well and barrier widths of 7 nm, were grown on both the textured and the smooth GaN templates by plasma-assisted MBE and their optical properties were evaluated by photoluminescence (PL) and cathodoluminescence (CL) measurements. The PL spectra of the smooth and “wrinkled” MQWs have significant differences. The PL from the smooth quantum wells has a single peak at 396 nm, consistent with the expected red-shift from the PL spectra of the bulk GaN films due to the quantum confined Stark effect (QCSE). The PL peak from the wrinkled QWs occurs at 358 nm, which is blue-shifted with respect to the PL spectra of the bulk GaN films, a result consistent with QWs having a square configuration. Furthermore, we found that the integrated photoluminescence intensity from the “wrinkled” multiple quantum wells (WMQWs) was about 700 times higher than that of the smooth MQWs. We attribute this significant enhancement of the photoluminescence from the WMQWs partly to enhancement in light extraction through the textured surface and partly to enhanced spontaneous emission rate. We believe that the increase in the internal quantum efficiency is due to the reduction of the QCSE, since the quantum wells are not perpendicular to polar [0001] direction. Further enhancement in internal quantum efficiency is expected due to quantum carrier confinement from "wedge" electronic eigen-modes. The latter has its origin to the transition in the carrier behavior from 2D to 1D due to the V-shaped intersecting planes of the quantum wells, and thus the "wedges" behave as quantum wires, which cause localization and trapping of excitons.

Proceedings Article | 28 August 2002 Paper

Growth of wide-bandgap nitride semiconductors by MBE

T. Moustakas

Proceedings Volume 10303, 1030302 (2002) https://doi.org/10.1117/12.482615

KEYWORDS: Semiconductors, Gallium nitride, Silicon carbide, Nitrogen, Magnesium, Electrons, Aluminum, Gallium, Indium gallium nitride, Superlattices

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This paper reviews progress in the heteroepitaxial growth of Ill-Nitride semiconductors. The growth of wurtzite and zinc-blende allotropic forms of GaN on various substrates with hexagonal and cubic symmetry respectively were discussed. In particular we addressed the growth on the various faces of sapphire, 6H-SiC and (001) Si. It has been shown that the kinetics of growth by plasma-MBE or ammonia-MBE are different. Specifically, in plasma-assisted MBE smooth films are obtained under group-III rich conditions of growth. On the other hand in ammonia-MBE smooth films are obtained under nitrogen rich conditions of growth. High quality films were obtained on 6H-SiC without the employment of any buffer. The various nucleation steps used to improve the two dimensional growth as well as to control the film polarity were discussed. The n- and p-doping of GaN were addressed. The concept of increasing the solubility of Mg in GaN by simultaneously bombarding the surface of the growing film with a flux of electrons (co-doping GaN with Mg and electrons) was discussed. The influence of the strength of Al-N, Ga-N and In-N bonds on the kinetics of growth of nitride alloys was pointed out. Specifically, it was shown that in both the nitrogen-rich and group-III rich growth regimes, the incorporation probability of aluminum is unity for the investigated temperature range of 750-800° C. On the other hand the incorporation probability of gallium is constant but less than unity only in the nitrogen-rich regime of growth. In the group-III regime the incorporation probability of gallium decreases monotonically with the total group-III flux, due to the competition with aluminum for the available active nitrogen. Alloy phenomena such as phase separation and atomic ordering and the influence of these phenomena to the optical properties were addressed. InGaN alloys are thermodynamically unstable against phase separation. At compositions above 30% they tend to undergo partial phase separation. Furthermore, InGaN alloys were found to undergo 1x1 monolayer cation ordering. AlGaN alloys do not show evidence of phase separation but they were found to undergo multiple type of superlattice ordering. Under nitrogen-rich growth conditions they show one monolayer periodicity, while under group-III rich growth it was found that the structure is a superposition of a seven monolayer and twelve monolayer superlattices. Finally, the growth of heterostructures and MQWs and the use of the MBE method for the fabrication of optical, electronic and electromechanical devices were discussed.

Proceedings Article | 14 July 2000 Paper

Group-III nitride VCSEL structures grown by molecular beam epitaxy

HockMin Ng, Theodore Moustakas

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391418

KEYWORDS: Reflectivity, Vertical cavity surface emitting lasers, Mirrors, Sapphire, Gallium nitride, Molecular beam epitaxy, Indium gallium nitride, Scanning electron microscopy, Silver, Refractive index

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Proceedings Article | 13 April 2000 Paper

GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substrates

Anand Sampath, E. Iliopoulos, K. Seth, Y. Fedyunin, Mira Misra, HockMin Ng, Phil Lamarre, Ze'ev Feit, Theodore Moustakas

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382132

KEYWORDS: Gallium nitride, Diodes, Sapphire, Error control coding, Photodiodes, Nickel, Epitaxial lateral overgrowth, Gold, Visible radiation, Absorption

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Proceedings Article | 13 April 2000 Paper

GaN Schottky diode ultraviolet detectors grown by molecular beam epitaxy

Mira Misra, Anand Sampath, E. Iliopoulos, Theodore Moustakas

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382135

KEYWORDS: Diodes, Gallium nitride, Sensors, Photodiodes, Reactive ion etching, Metals, Etching, Doping, Ultraviolet radiation, Molecular beam epitaxy

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Proceedings Article | 15 June 1995 Paper

Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy

Mira Misra, Theodore Moustakas, Robert Vaudo, Rajminder Singh, Kanai Shah

Proceedings Volume 2519, (1995) https://doi.org/10.1117/12.211915

KEYWORDS: Sensors, Gallium nitride, X-rays, Ultraviolet detectors, Ultraviolet radiation, X-ray detectors, Molecular beam epitaxy, Photons, Photodiodes, Transmittance

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Proceedings Article | 20 November 1992 Paper

Characterization of electron cyclotron resonance plasmas for diamond deposition

Shu Jin, Richard Molnar, Donald Jong, Theodore Moustakas

Proceedings Volume 1759, (1992) https://doi.org/10.1117/12.130760

KEYWORDS: Plasmas, Diamond, Microwave radiation, Magnetism, Oxygen, Carbon, Etching, Hydrogen, Temperature metrology, Emission spectroscopy

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Proceedings Article | 20 November 1992 Paper

Properties of optically smooth diamond thin films produced by ECR-PACVD

Shu Jin, Marco Fanciulli, Donald Jong, Yi-Wu He, Theodore Moustakas

Proceedings Volume 1759, (1992) https://doi.org/10.1117/12.130766

KEYWORDS: Diamond, Aluminum, Silicon, Microwave radiation, Magnetism, Scanning electron microscopy, Thin films, Crystals, Absorption, Raman spectroscopy

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Showing 5 of 17 publications

Conference Committee Involvement (1)

GaN Materials and Devices

23 January 2006 | San Jose, California, United States

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