A strategy for sub-100 nm technology nodes is to maximize the use of high-speed deep-UV laser pattern generators, reserving e-beam tools for the most critical photomask layers. With a 248 nm excimer laser and 0.82 NA projection optics, the Sigma7500 increases the application space of laser pattern generators. A programmable spatial light modulator (SLM) is imaged with partially coherent optics to compose the photomask pattern. Image profiles are enhanced with phase shifting in the pattern generator, and features below 200 nm are reliably printed. The Sigma7500 extends the SLM-based architecture with improvements to CD uniformity and placement accuracy, resulting from an error budget-based methodology. Among these improvements is a stiffer focus stage design with digital servos, resulting in improved focus stability. Tighter climate controls and improved dose control reduce drift during mask patterning. As a result, global composite CD uniformity below 5 nm (3σ) has been demonstrated, with placement accuracy below 10 nm (3σ) across the mask. Self-calibration methods are used to optimize and monitor system performance, reducing the need to print test plates. The SLM calibration camera views programmed test patterns, making it possible to evaluate image metrics such as CD uniformity and line edge roughness. The camera is also used to characterize image placement over the optical field. A feature called ProcessEqualizerTM has been developed to correct long-range CD errors arising from process effects on production photomasks. Mask data is sized in real time to compensate for pattern-dependent errors related to local pattern density, as well as for systematic pattern-independent errors such as radial CD signatures. Corrections are made in the pixel domain in the advanced adjustments processor, which also performs global biasing, stamp distortion compensation, and corner enhancement. In the Sigma7500, the mask pattern is imaged with full edge addressability in each writing pass, providing the means of additionally improving write time by reducing the number of exposure passes. Photomask write time is generally under two hours in the 2-pass mode, compared to three hours with 4-pass writing. With a through-the-lens alignment system and both grid matching and pattern matching capabilities, the tool is also suitable for 2nd layer patterning in advanced PSM applications. Improvements in alignment algorithms and writing accuracy have resulted in first-to-second level overlay below 15 nm (mean+3σ).
As photomask pattern complexity continues to increase, it becomes more challenging to control write times of shaped e-beam tools. This raises the related concerns of increased mask costs and extended mask cycle times. A strategy for sub-100 nm technology nodes is to use high-speed DUV laser pattern generators for as many layers as possible, reserving e-beam tools for only the most critical layers. With 248 nm optics and high-NA partially coherent imaging, the Sigma7500 increases the application space available to laser pattern generators. Image profiles are steepened with phase shifting methods, and pattern fidelity is improved with on-line corner enhancement. In the Sigma architecture, mask patterns are imaged with full fidelity and addressability in each writing pass. Because of this, the Sigma7500 provides additional means to improve write time by reducing the number of exposure passes. Platform improvements have resulted in a 2-pass writing accuracy that meets the 4-pass specification of the previous system. Write time is typically under two hours in 2-pass mode, compared to approximately three hours for 4-pass. The Sigma7500 can generally be used for all binary mask layers at the 90 nm technology node, and for about half the layers at 45 nm. The ProcessEqualizerTM function addresses long range CD errors arising from mask process effects. Mask data is sized in real time to compensate for process errors related to local pattern density, and also to correct for static process CD signatures. With a through-the-lens alignment system and both grid matching and pattern matching capabilities, the tool is also suited to 2nd layer patterning for advanced phase shifting mask (PSM) applications down to 45 nm, with extendibility to 32 nm. Process integration is facilitated by the use of standard FEP-171 chemically amplified resist (CAR).
Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level alignment system accuracy, resolution, pattern fidelity, critical dimension (CD) uniformity and registration. Optical mask writers have the advantage of process simplicity for this application, as they do not require a discharge layer. This paper discusses how the mask writer properties affect the error budget for printing the second level. A deep ultraviolet (DUV) mask writer with a spatial light modulator (SLM) is used in the experimental part of the paper. Partially coherent imaging optics at the 248 nm wavelength provide improved resolution over previous systems, and pattern fidelity is optimized by a real-time corner enhancement function. Lithographic performance is compared to the requirements for second level exposure of advanced PSM. The results indicate sufficient capability and stability for 2nd level alternating PSM patterning at the 65 nm and 45 nm nodes.
Phase shifting mask (PSM) development activity is increasing as 193nm optical lithography is extended beyond the 90nm technology node. The requirements on second level mask patterning of advanced PSM have for many applications exceeded the capability of i-line pattern generators, and it is natural for deep-ultraviolet (DUV) pattern generators to be employed for this task. The Sigma7300 DUV mask writer has the attributes required for advanced PSM applications: high resolution, tight CD uniformity and pattern placement, an accurate alignment system, and grid matching to first level exposures. The paper reports system performance for the parameters that constitute the error budget for second level patterning and shows that the mask writer is suitable for second level patterning of advanced PSMs. The alignment system employs the same laser and optics that are used for system calibration and exposure, including a CCD camera that links system calibration to alignment. As a result overlay performance is stable, and is shown to be independent of alignment mark image contrast changes due to different mask materials or resist thicknesses. The mask process uses a conventional chemically amplified resist, and does not require the use of charge dissipating top layers. Combined with throughput that is essentially independent of pattern complexity, DUV pattern generation provides a high yield solution for second level patterning of advanced PSMs for the 65nm and 45nm nodes.
This paper treats a for the semiconductor industry somewhat different application: The first-ever manufacture of Diffractive Optical Elements (DOE’s) as directly written multilevel diffractive micro-reliefs using the DUV SLM-based Sigma7300 Mask. The reliefs were manufactured in the DUV Chemically Amplified Resist (CAR) FEP-171. This particular application is of direct interest since DOE’s are already incorporated in the Sigma7300 system. The design and manufacture are demonstrated with (1.) A Fan-out element and (2.) A logotype generator. The first attempts, reported here, resulted in a Fan-out element with diffraction efficiency of 64% compared to the theoretical design of 88%.
Airborne molecular contamination (AMC) in the form of bases, acids and condensable organic and inorganic substances threaten both costly and sensitive optics and mask pattern formation in the chemically amplified resists (CAR) used for both E-beam and laser lithography. This is particularly so for mask pattern generators due to the relatively long writing times. In the development work of the SLM-based DUV-laser mask pattern generator Sigma7300, AMC aspects have been taken into consideration from an early stage. That includes e.g. analysis and selection of construction materials and development of handling methods as well as application of chemical filtering systems. Tool manufacturer and filter supplier have together specified and designed efficient hybrid filtration systems for use in Sigma7300. This paper describes AMC aspects specific for mask pattern generators, the successful design actions of the Sigma7300 and verifying analyses of the processes.
One of the sub-functions in the Micronic Sigma 7300 mask writer is the 2:nd layer alignment system for writing of phase shift masks. The strategy chosen for performing PSM alignment is to use the DUV writing laser together with the spatial light modulator (SLM) to create a light stamp image, which is reflected on the first layer alignment marks. The reflected image is captured and measured with a DUV-sensitive CCD camera. Using the writing laser has many benefits since there is no position offsets coming from misalignment of multiple laser sources. The anti-reflection (AR) function in chemically amplified resists (CAR), bottom anti-reflex coatings (BARC) and top anti-reflex coatings (TARC) reduces reflectance for 248 nm incoming light. This could reduce the signal strength and accuracy of the alignment system as the 248 nm laser is used for the alignment. The paper focuses mainly on two issues, image contrast at different resist thicknesses and image contrast when AR coatings are used. The algorithm measuring the fist layer alignment mark positions is also described. The studies of this and results of the final PSM alignment system show that Micronic has found an efficient way of dealing with these issues.
Critical dimension control is becoming more and more critical in the mask making industry as the exposure wavelength goes down. For laser pattern generators, the move from traditional DNQ/Novolak based towards DUV chemically amplified resist processing was initially troublesome. The relative long total exposure time of pattern generators in contrast to wafer steppers, in combination with thick quartz substrates with relatively low heat capacity, may result in
reduced lithographic performance due to excessive diffusion of photogenerated acid. The photoresist polymer architecture play a large role in determining the acid diffusion characteristics and thereby also the image fidelity and resolution. In the Sigma7300 laser pattern generator the image is created by the spatial light modulator, which acts as a reflective computer-controlled reticle. By adopting a proper writing strategy, the negative effects of acid diffusion could be reduced. One component in the Sigma writing strategy is to expose the pattern in several passes that allows for dose compensation as well as averaging schemes to reduce CD errors. By adjusting the dose per pass and by keeping track of the delay times between each shot as well as the exposure path, a better control of the linewidth may be achieved for certain photoresist chemistry. In this study we present results from investigations of AZ DX 1100P and FEP-171 resists using different writing strategies.
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