Mr. Thomas Ott Profile

Thomas Ott

at Hochschule Ulm

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Proceedings Article | 24 September 2013 Paper

Long term endurance test and contact degradation of CIGS solar cells

Thomas Ott, Francillina Schönberger, Thomas Walter, Dimitrios Hariskos, Oliver Kiowski, Raymund Schäffler

Proceedings Volume 8825, 88250J (2013) https://doi.org/10.1117/12.2024132

KEYWORDS: Copper indium gallium selenide, Temperature metrology, Solar cells, Diodes, Sun, Reliability, External quantum efficiency, Interfaces, Thin film solar cells, Electroluminescence

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CIGS is the most promising technology for thin-film solar cells with record efficiencies of 20.4 % on laboratory scale and 17.8 % aperture area efficiency on a 900 cm² module. Another important factor besides the cell efficiency is the reliability and long term stability of the manufactured modules, which can be assessed by accelerated ageing. In this contribution the accelerated ageing of CIGS mini modules has been investigated. Therefore, modules were dark annealed under dry heat conditions at different temperatures. During the endurance test a positive or negative bias was applied to the cells. In regular intervals the IV- and CV-characteristics were measured at room temperature. After an overall stress time of 3500 h the IV-characteristics were determined under different illumination conditions (intensity, spectral illumination). Our previous publications suggest a barrier at the back contact to explain the observed parameter drifts. This contribution is focused on the influence of different bias conditions during the endurance test on the generation of a back diode and on the change of the acceptor concentration. These parameter drifts have an impact on the open circuit voltage, fill factor and on the appearance of a cross over between dark and illuminated IV-characteristics. The interpretation of the observed parameter drifts was supported by SCAPS simulations based on the above mentioned back barrier model. As an outcome of the simulations signatures for the existence of a back barrier diode were established. IVmeasurements, temperature dependent V_oc measurements and SunsV_oc measurements are helpful means to detect such back diodes.

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