Prof. Thorvald G. Andersson Profile

Prof. Thorvald G. Andersson

at Chalmers Univ of Technology

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 26 November 2007 Paper

Intersubband photonic devices by group-III nitrides

P. Holmström, X. Liu, H. Uchida, T. Aggerstam, A. Kikuchi, K. Kishino, S. Lourdudoss, T. Andersson, L. Thylén

Proceedings Volume 6782, 67821N (2007) https://doi.org/10.1117/12.754372

KEYWORDS: Quantum wells, Gallium nitride, Absorption, Modulators, Aluminum nitride, Quantum well infrared photodetectors, Silicon, Waveguides, Switches, Terahertz radiation

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Proceedings Article | 21 February 2007 Paper

GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 µm intersubband absorption

T. Aggerstam, T. Andersson, P. Holmström, P. Jänes, X. Liu, S. Lourdudoss, L. Thylén

Proceedings Volume 6479, 64791E (2007) https://doi.org/10.1117/12.695457

KEYWORDS: Gallium nitride, Absorption, Quantum wells, Aluminum nitride, Sapphire, Modulators, FT-IR spectroscopy, Atomic force microscopy, Silicon, Solids

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Proceedings Article | 11 June 2003 Paper

Pinning of Landau levels in open two dimensional electron systems

V. Popov, Yu Dubrovskii, E. Vdovin, Yu Khanin, Jean-Claude Portal, D. Maude, Thorvald Andersson, S. Wang

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.513915

KEYWORDS: Magnetism, Diodes, Physics, Thermodynamics, Electron transport, Solids, Microelectronics, Luminescence, Spectroscopy, Nanostructures

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Proceedings Article | 19 November 1993 Paper

Carrier lifetimes in periodically delta-doped MQW structures

Anders Larsson, Bjorn Jonsson, Ola Sjolund, Jeffrey Cody, Thorvald Andersson, S. Wang, Ulf Sodervall, Daniel Rich, Joseph Maserjian

Proceedings Volume 1985, (1993) https://doi.org/10.1117/12.162781

KEYWORDS: Quantum wells, Nonlinear optics, Ions, Mass spectrometry, Transmission electron microscopy, Electron beams, Absorption, Modulation

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Proceedings Article | 3 September 1992 Paper

Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained InxGa1-xAs/GaAs (x>0.36) single quantum wells

S. Wang, Thorvald Andersson, M. Ekenstedt

Proceedings Volume 1675, (1992) https://doi.org/10.1117/12.137628

KEYWORDS: Quantum wells, Temperature metrology, 3D modeling, Physics, Gallium arsenide, Superlattices, Luminescence, Molecular beam epitaxy, Cladding, Heterojunctions

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Proceedings Article | 1 March 1991 Paper

Measurements of the InxGa1-xAs/GaAs critical layer thickness

Thorvald Andersson, M. Ekenstedt, Vladimir Kulakovskii, S. Wang, J. Yao

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24412

KEYWORDS: Quantum wells, 3D modeling, Diffraction, Optoelectronic devices, Luminescence, Chemical species, Gallium arsenide, Interfaces, Excitons, Transmission electron microscopy

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Showing 5 of 6 publications

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