KEYWORDS: Metrology, 3D metrology, Line width roughness, Transmission electron microscopy, Etching, Critical dimension metrology, Line edge roughness, 3D modeling, Process control, Transistors
The logic and memory semiconductor device technology strives to follow the aggressive ITRS roadmap. The ITRS calls
for increased 3D metrology to meet the demand for tighter process control at 45nm and 32nm nodes. In particular, gate
engineering has advanced to a level where conventional metrology by CD-SEM and optical scatterometry (OCD) faces
fundamental limitations without involvement of 3D atomic force microscope (3D-AFM or CD-AFM). This paper reports
recent progress in 3D-AFM to address the metrology need to control gate dimension in MOSFET transistor formation.
3D-AFM metrology measures the gate electrode at post-etch with the lowest measurement uncertainty for critical gate
geometry, including linewidth, sidewall profile, sidewall angle (SWA), line width roughness (LWR), and line edge
roughness (LER). 3D-AFM enables accurate gate profile control in three types of metrology applications: reference
metrology to validate CD-SEM and OCD, inline depth or 3D monitoring, or replacing TEM for 3D characterization for
engineering analysis.
Continuing demand for high performance microelectronic products propelled integrated circuit technology into 45 nm
node and beyond. The shrinking device feature geometry created unprecedented challenges for dimension metrology in
semiconductor manufacturing and research and development. Automated atomic force microscope (AFM) has been used
to meet the challenge and characterize narrower lines, trenches and holes at 45nm technology node and beyond. AFM is
indispensable metrology techniques capable of non-destructive full three-dimensional imaging, surface morphology
characterization and accurate critical dimension (CD) measurements. While all available dimensional metrology
techniques approach their limits, AFM continues to provide reliable information for development and control of
processes in memory, logic, photomask, image sensor and data storage manufacturing. In this paper we review up-todate
applications of automated AFM in every mentioned above semiconductor industry sector. To demonstrate benefits
of AFM at 45 nm node and beyond we compare capability of automated AFM with established in-line and off-line
metrologies like critical dimension scanning electron microscopy (CDSEM), optical scatterometry (OCD) and
transmission electronic microscopy (TEM).
KEYWORDS: Metrology, Atomic force microscopy, Line width roughness, Line edge roughness, Scanners, Critical dimension metrology, Actuators, Silicon, Profiling, 3D metrology
Critical dimension atomic force microscope (CD-AFM or 3D-AFM) is an important metrology technique for full three-dimensional measurements of linewidth CD and sidewall shape. Recent improvements in the 3D-AFM platform design, including high-precision/low-drift sample stages and high resolution optics, have been coupled with 'enhanced CD' (eCD) scan mode and novel AFM tip design. Especially, the eCD mode features a fast scanning actuator system (FA) and a bottom corner transitional rescan algorithm (TRS). The actuation system utilizes high gain feedback electronics and high bandwidth piezoelectric actuator to pull away a slender tip much faster from a small trench sidewall. The transitional rescan algorithm detects a rising sidewall before rescanning the transition for better bottom corner profiling. The paper presents evaluation data to show these enhancements resulted in improved measurement capability for small trenches required for shrinking device size, better sidewall profiling, more accurate bottom CD and LWR/LER measurement, faster scan speed, and less tip wear [1]. All the improvements ensure 3D-AFM continues to have the lowest measurement uncertainty among all other dimension metrology techniques.
KEYWORDS: Atomic force microscopy, Etching, Metrology, Semiconducting wafers, Dry etching, Process control, 3D metrology, Manufacturing, Scanning electron microscopy, Plasma etching
In advanced DRAM manufacturing, the process scaling to increase memory cell density creates a difficult challenge for
conventional optical or SEM metrology tools to characterize wafer surface profiles after plasma etching. Dry plasma
etch processes are used to form critical contact plugs within a stacked capacitor DRAM cell, two of which will be
discussed in this article. One contact plug connects a buried digit line to an active area in array, while another contact
plug connects a capacitor container to an active area through the first plug. In both cases, the etched surface structure
features a complex three-dimensional (3D) topography with a minimum space at ~50nm (see Figure 1). Etch profiles are
directly related to the DRAM yield and must be monitored inline. Scanning probe based atomic force microscopy
(AFM) is particularly beneficial for this type of dimension measurements. This article presents the methodology and
recent results of applying AFM as inline metrology for contact etch control at 70nm node and below. AFM is an
advanced, high-resolution 3D imaging tool. It provides nondestructive and direct in-die measurements of the active
circuit region on product wafers at the contact etch steps and other critical process layers. Calculated automatically from
AFM images, the dry etch depth is used as inline metrology for process control and is a critical metric for process
optimization.
KEYWORDS: Atomic force microscopy, Etching, Critical dimension metrology, 3D metrology, Metrology, Copper, Semiconducting wafers, Scanning electron microscopy, Process control, Transmission electron microscopy
Accurate, precise, and rapid three-dimensional (3D) characterization of patterning processes in integrated
circuit development and manufacturing is critical for successful volume production. As process tolerances and circuit
geometries shrink with each technology node, the precision, accuracy, and capability requirements for dimension and
profile metrology intensify. The present work adopts the scanning probe based technology, 3D atomic force
microscopy (AFM), to address current and next-generation critical dimension (CD) metrology needs for device features
at a variety of process steps. Fast, direct, and non-destructive 3D profile characterization of patterning processes is a
primary benefit of CD AFM metrology. The CD AFM utilizes a deep trench (DT) mode for narrow and deep trenches,
and a CD mode for linewidth and sidewall profiling. The 3D capability enables one tool for many applications where
conventional scanning electron microscopy (SEM), scatterometry, and stylus profiler tools fall short: Gate etch/resist
linewidth and sidewall cross-section profile, etch depth for high aspect ratio via, STI etch depth, 3D analysis for
MUGFET multi-gate devices, pitch/CD/sidewall angle (SWA) verification for scatterometry targets, and post-CMP
active recess. The AFM is an efficient tool for inline monitoring, rapid process improvement/development, and is a
complementary addition to the dimension metrology family.
KEYWORDS: Atomic force microscopy, Critical dimension metrology, Photomasks, Etching, Metrology, Quartz, 3D metrology, Scanning electron microscopy, Process control, Silicon
The critical dimension (CD) specification of photomask for semiconductor integrated circuit patterning at a 90nm node and below is becoming unprecedentedly stringent. To meet the tight ITRS roadmap requirement, reticle makers have to rely heavily on advanced dimension metrology to characterize and control the processes of novel materials, new structures, and shrinking mask enhancement features. This paper evaluates a new generation of atomic force microscopy (AFM) for imaging and measuring the full three-dimensional (3D) shape of features. Cross-section sidewall profile, linewidth, and depth of etched mask features are evaluated at different steps of the mask making process. The impact of AFM probe characterization on the metrology capability to achieve nanoscale precision and accuracy is quantified. Tip shape parameters and tip wear are evaluated for a variety of mask materials for depth, linewidth, and sidewall profile measurements. The scanning probe based technique provides an absolute and direct measure of mask features anywhere within a plate, regardless of the material characteristics. Representative results on linewidth (for CD control), depth (for phase shift control), and sidewall profile (etch profile control) of etched masks are presented. The CD AFM data can help engineers better characterize and analyze the process and improve process control for mask development and manufacturing.
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