We present a new single-chip diaphragm-type Fabry-Perot microcavity pressure sensor with a novel single deeply corrugated diaphragm. Both analytical and experimental results have shown that some common issues, such as signal-averaging effect and cross-sensitivity to temperature with diaphragm-type Fabry-Perot microcavity pressure sensors, can be substantially alleviated by the proposed technique.
In this paper, the surface area of solar cell is determined by the capacitance measurements of MOS structure. The texture etching technology can be controlled according to the change of silicon surface area, furthermore, the textured silicon surface and interface characteristic of solar cell can be studied by measuring the relationship of capacitance and voltage for MOS structure.
CdTe thin films are obtained by on glass substrates by vacuum vapor deposition. This work mainly presents the optical and electrical characteristics of the CdTe films by varying stoichiometry of Cd and Te, doping-In and thermal treatment with N2. The variation of band gap and absorption coefficient is studied as well as the resistivity. The results show that the undoped-In samples have very high resistivity on which thermal treatment has little effect, which proves that the undoped CdTe thin film is high resistivity semiconductor. On the other hand, the resistivity of the doped-In samples decreases after thermal treatment. In general, the optical and electrical characteristics of the prepared CdTe thin film can be improved by proper doping and thermal treatment.
CdTe film can be prepared on the glass by vacuum vapor deposition. We change the stoichiometry of Cd:Te, dope In, and thermally treat the samples in N2. Then, the compositions, structure, and grain size are studied by XRD, SEM and AES. The results reveal that the surface morphology and microstructures of the samples are improved after thermal treatment, In is incorporated into CdTe, and forms CdTe:In. Moreover, the preferential growth orientation along <111> appears.
This paper presents the carrier distribution of MIS/IL solar cell in the strong inversion condition. The variation of the surface potential Vs with the fixed positive charge density Qs/q, energy structure and the sheet resistance have been calculated using Fermi statistics distribution. Based that, the MIS/IL solar cells are fabricated with the solar grade silicon material. Consequently, the difference of the solar cell performance before and after doping cesium is compared.
A newly designed thin-film thermopile infrared detector, which as an absorption layer and a sensitive area on two sides are fabricated using integrated-circuit technology. The device uses a series-connected thermocouples array whose `hot' junction are supported on a thin Myler film of 1 - 3 micrometers thickness. By a special method of fasting the shadow mask, the thermopile with 48 Bi-Sb couples for 2 X 2 mm2 area produces a responsivity of 50 - 70 V/W and relaxation time of about 70 ms.