Dr. Tim Fühner Profile

Dr. Tim Fühner

Consultant - Software Engineer at Siemens EDA

SPIE Involvement:

Author

Area of Expertise:

computational lithography , artificial intelligence , optimization

Websites:

Company Website

Publications (38)

Proceedings Article | 22 February 2021 Presentation

Validation of machine learning OPC compact models for advanced manufacturing

Moongyu Jeong, Marco Guajardo, Cheng-En Wu, Song-haeng Lee, Tim Fuehner, Lena Zavyalova, Li-Jin Chen, Hua Song, Kevin Lucas

Proceedings Volume 11614, 116140R (2021) https://doi.org/10.1117/12.2584940

KEYWORDS: Optical proximity correction, Machine learning, Data modeling, Manufacturing, Critical dimension metrology, Semiconductors, Photomasks, Semiconducting wafers, Optical lithography, Neural networks

Read Abstract +

Proceedings Article | 26 March 2019 Presentation + Paper

Impact of EUV absorber variations on wafer patterning

Lawrence Melvin, Yudhishthir Kandel, Tim Fühner, Ulrich Welling, Emily Gallagher, Andreas Frommhold, Yoshitake Shusuke

Proceedings Volume 10957, 109570N (2019) https://doi.org/10.1117/12.2515511

KEYWORDS: SRAF, Photomasks, Semiconducting wafers, Optical proximity correction, Extreme ultraviolet, Atomic force microscopy, Critical dimension metrology, Optical lithography, Data modeling, Multilayers

Read Abstract +

Proceedings Article | 19 March 2018 Presentation + Paper

Impact of EUV mask absorber sidewall angle on patterning robustness

Lawrence Melvin, Yudhishthir Kandel, Tim Fühner, Weimin Gao

Proceedings Volume 10583, 1058314 (2018) https://doi.org/10.1117/12.2296865

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Near field, Optical lithography, Manufacturing, Extreme ultraviolet lithography, Light scattering, Scattering

Read Abstract +

Proceedings Article | 23 March 2016 Paper

An integrated source/mask/DSA optimization approach

Tim Fühner, Przemysław Michalak, Ulrich Welling, Juan Carlos Orozco-Rey, Marcus Müller, Andreas Erdmann

Proceedings Volume 9780, 97800M (2016) https://doi.org/10.1117/12.2222170

KEYWORDS: Directed self assembly, Interfaces, Photomasks, Optimization (mathematics), Lithography, Manufacturing, Bridges, Electroluminescence, Critical dimension metrology, Image segmentation

Read Abstract +

Proceedings Article | 31 March 2014 Paper

Rigorous simulation and optimization of the lithography/directed self-assembly co-process

Tim Fühner, Ulrich Welling, Marcus Müller, Andreas Erdmann

Proceedings Volume 9052, 90521C (2014) https://doi.org/10.1117/12.2047381

KEYWORDS: Monte Carlo methods, Cadmium, Lithography, Critical dimension metrology, Polymers, Polymethylmethacrylate, Interfaces, Computer simulations, Molecular interactions, Directed self assembly

Read Abstract +

SPIE Journal Paper | 2 December 2013

Application of artificial neural networks to compact mask models in optical lithography simulation

Viviana Agudelo, Tim Fühner, Andreas Erdmann, Peter Evanschitzky

JM3, Vol. 13, Issue 01, 011002, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011002

KEYWORDS: Photomasks, Diffraction, Artificial neural networks, Data modeling, Optical lithography, Systems modeling, Lithography, Polarization, Neurons, Optical simulations

Read Abstract +

Proceedings Article | 22 May 2013 Paper

Defect parameters retrieval based on optical projection images

Dongbo Xu, Sikun Li, Xiangzhao Wang, Tim Fühner, Andreas Erdmann

Proceedings Volume 8789, 87890J (2013) https://doi.org/10.1117/12.2018210

KEYWORDS: Photomasks, 3D modeling, Defect detection, Lithography, Monochromatic aberrations, Projection systems, Integrated optics, Nanostructures, Lithographic illumination, Optics manufacturing

Read Abstract +

Proceedings Article | 12 April 2013 Paper

Application of artificial neural networks to compact mask models in optical lithography simulation

Viviana Agudelo, Tim Fühner, Andreas Erdmann, Peter Evanschitzky

Proceedings Volume 8683, 868317 (2013) https://doi.org/10.1117/12.2011132

KEYWORDS: Photomasks, Diffraction, Artificial neural networks, Systems modeling, Optical lithography, Lithography, Performance modeling, Imaging systems, Data modeling, Optical simulations

Read Abstract +

Proceedings Article | 1 April 2013 Paper

Modeling studies on alternative EUV mask concepts for higher NA

Andreas Erdmann, Tim Fühner, Peter Evanschitzky, Jens Timo Neumann, Johannes Ruoff, Paul Gräupner

Proceedings Volume 8679, 86791Q (2013) https://doi.org/10.1117/12.2011432

KEYWORDS: Photomasks, Image quality standards, Nanoimprint lithography, Lithography, Molybdenum, Binary data, Optical proximity correction, Extreme ultraviolet, Silicon, Multilayers

Read Abstract +

Proceedings Article | 13 March 2012 Paper

Mutual source, mask and projector pupil optimization

Tim Fühner, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 8326, 83260I (2012) https://doi.org/10.1117/12.916529

KEYWORDS: Electroluminescence, Projection systems, Optical lithography, Current controlled current source, SRAF, Wavefronts, Monochromatic aberrations, Genetic algorithms, Optimization (mathematics)

Read Abstract +

Proceedings Article | 13 March 2012 Paper

Evaluation of various compact mask and imaging models for the efficient simulation of mask topography effects in immersion lithography

Viviana Agudelo, Peter Evanschitzky, Andreas Erdmann, Tim Fühner

Proceedings Volume 8326, 832609 (2012) https://doi.org/10.1117/12.916344

KEYWORDS: Photomasks, Diffraction, Optical filters, 3D modeling, Polarization, Calibration, Solids, Projection systems, Immersion lithography, Lithography

Read Abstract +

Proceedings Article | 5 October 2011 Paper

Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects

Andreas Erdmann, Peter Evanschitzky, Feng Shao, Tim Fühner, Gian Lorusso, Eric Hendrickx, Mieke Goethals, Rik Jonckheere, Tristan Bret, Thorsten Hofmann

Proceedings Volume 8171, 81710M (2011) https://doi.org/10.1117/12.896813

KEYWORDS: Calibration, Photomasks, Data modeling, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Diffusion, Semiconducting wafers, Projection systems

Read Abstract +

Proceedings Article | 23 May 2011 Paper

Image simulation of projection systems in photolithography

P. Evanschitzky, T. Fühner, A. Erdmann

Proceedings Volume 8083, 80830E (2011) https://doi.org/10.1117/12.895029

KEYWORDS: Photomasks, Lithography, Diffraction, Projection systems, Computer simulations, Photoresist materials, Imaging systems, Polarization, Semiconducting wafers, Extreme ultraviolet

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Compensation of mask induced aberrations by projector wavefront control

Peter Evanschitzky, Feng Shao, Tim Fühner, Andreas Erdmann

Proceedings Volume 7973, 797329 (2011) https://doi.org/10.1117/12.879207

KEYWORDS: Projection systems, Photomasks, Monochromatic aberrations, Wavefronts, Diffraction, Imaging systems, Extreme ultraviolet, Lithography, Semiconducting wafers, EUV optics

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Accuracy and performance of 3D mask models in optical projection lithography

Viviana Agudelo, Peter Evanschitzky, Andreas Erdmann, Tim Fühner, Feng Shao, Steffen Limmer, Dietmar Fey

Proceedings Volume 7973, 79730O (2011) https://doi.org/10.1117/12.879053

KEYWORDS: Photomasks, 3D modeling, Diffraction, Polarization, Systems modeling, Performance modeling, Lithography, Lithographic illumination, Projection lithography, Projection systems

Read Abstract +

Proceedings Article | 10 March 2010 Paper

Topography-aware BARC optimization for double patterning

Shijie Liu, Tim Fühner, Feng Shao, Aliaksandr Barenbaum, Johannes Jahn, Andreas Erdmann

Proceedings Volume 7640, 76403C (2010) https://doi.org/10.1117/12.846441

KEYWORDS: Modulation, Reflectivity, Refractive index, Double patterning technology, Lithography, Optimization (mathematics), Manufacturing, Optical properties, Genetic algorithms, Critical dimension metrology

Read Abstract +

SPIE Journal Paper | 1 January 2010

Mask diffraction analysis and optimization for extreme ultraviolet masks

Andreas Erdmann, Peter Evanschitzky, Tim Fühner

JM3, Vol. 9, Issue 01, 013005, (January 2010) https://doi.org/10.1117/12.10.1117/1.3302124

KEYWORDS: Photomasks, Diffraction, Extreme ultraviolet, Refractive index, Monochromatic aberrations, Extreme ultraviolet lithography, Lithographic illumination, Lithography, Wavefronts, Electromagnetism

Read Abstract +

SPIE Journal Paper | 1 October 2009

Efficient simulation and optimization of wafer topographies in double patterning

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

JM3, Vol. 8, Issue 04, 043070, (October 2009) https://doi.org/10.1117/12.10.1117/1.3275723

KEYWORDS: Semiconducting wafers, Photomasks, Diffraction, Waveguides, Lithography, Refractive index, Computer simulations, Optical proximity correction, Reflectivity, Photoresist materials

Read Abstract +

Proceedings Article | 30 September 2009 Paper

Efficient analysis of three dimensional EUV mask induced imaging artifacts using the waveguide decomposition method

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

Proceedings Volume 7488, 74882C (2009) https://doi.org/10.1117/12.833464

KEYWORDS: Photomasks, Diffraction, Waveguides, Extreme ultraviolet, Optical proximity correction, Extreme ultraviolet lithography, Lithographic illumination, Lithography, 3D image processing, Stereoscopy

Read Abstract +

Proceedings Article | 17 June 2009 Paper

Lithography simulation: modeling techniques and selected applications

Andreas Erdmann, Tim Fühner, Feng Shao, Peter Evanschitzky

Proceedings Volume 7390, 739002 (2009) https://doi.org/10.1117/12.829409

KEYWORDS: Lithography, Photomasks, Photoresist materials, Diffraction, Semiconducting wafers, Computer simulations, Double patterning technology, Photoresist developing, Optimization (mathematics), Absorption

Read Abstract +

Proceedings Article | 27 May 2009 Paper

Extended Abbe approach for fast and accurate lithography imaging simulations

P. Evanschitzky, A. Erdmann, T. Fühner

Proceedings Volume 7470, 747007 (2009) https://doi.org/10.1117/12.835168

KEYWORDS: Photomasks, Computer simulations, Diffraction, Imaging systems, Lithography, Semiconducting wafers, Polarization, Performance modeling, Systems modeling, Superposition

Read Abstract +

Proceedings Article | 18 March 2009 Paper

Mask diffraction analysis and optimization for EUV masks

Andreas Erdmann, Peter Evanschitzky, Tim Fühner

Proceedings Volume 7271, 72711E (2009) https://doi.org/10.1117/12.814119

KEYWORDS: Photomasks, Diffraction, Refractive index, Extreme ultraviolet, Monochromatic aberrations, Extreme ultraviolet lithography, Lithographic illumination, Lithography, Wavefronts, Electromagnetism

Read Abstract +

Proceedings Article | 16 March 2009 Paper

Efficient simulation and optimization of wafer topographies in double patterning

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

Proceedings Volume 7274, 72740O (2009) https://doi.org/10.1117/12.814176

KEYWORDS: Semiconducting wafers, Photomasks, Diffraction, Lithography, Waveguides, Refractive index, Double patterning technology, Optical proximity correction, Reflectivity, Photoresist materials

Read Abstract +

Proceedings Article | 16 March 2009 Paper

Exploration of linear and non-linear double exposure techniques by simulation

John Petersen, Robert Greenway, Tim Fühner, Peter Evanschitzky, Feng Shao, Andreas Erdmann

Proceedings Volume 7274, 72741V (2009) https://doi.org/10.1117/12.814411

KEYWORDS: Remote sensing, Double patterning technology, Optical lithography, Current controlled current source, Superposition, Lithography

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Simulation-based EUV source and mask optimization

Tim Fühner, Andreas Erdmann, Peter Evanschitzky

Proceedings Volume 7122, 71221Y (2008) https://doi.org/10.1117/12.801436

KEYWORDS: Photomasks, Refractive index, Optimization (mathematics), Reflectivity, Chromium, Extreme ultraviolet, Source mask optimization, Extreme ultraviolet lithography, Lithographic illumination, Genetic algorithms

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Optimization of mask absorber stacks and illumination settings for contact hole imaging

Andreas Erdmann, Tim Fühner, Peter Evanschitzky

Proceedings Volume 7028, 70283L (2008) https://doi.org/10.1117/12.793128

KEYWORDS: Photomasks, Lithography, Genetic algorithms, Optimization (mathematics), Polarization, Phase shifts, Binary data, Algorithm development, Computer simulations, Inspection

Read Abstract +

Proceedings Article | 1 April 2008 Paper

A simulation study on the impact of lithographic process variations on CMOS device performance

Tim Fühner, Christian Kampen, Ina Kodrasi, Alexander Burenkov, Andreas Erdmann

Proceedings Volume 6924, 692453 (2008) https://doi.org/10.1117/12.772768

KEYWORDS: Lithography, Device simulation, Critical dimension metrology, CMOS devices, Photomasks, TCAD, Instrument modeling, Computer simulations, Transistors, Silicon

Read Abstract +

Proceedings Article | 1 April 2008 Paper

Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios

Andreas Erdmann, Peter Evanschitzky, Tim Fühner, Thomas Schnattinger, Cheng-Bai Xu, Chuck Szmanda

Proceedings Volume 6924, 692452 (2008) https://doi.org/10.1117/12.772741

KEYWORDS: Semiconducting wafers, Lithography, Refractive index, Double patterning technology, Photomasks, Computer simulations, Optical properties, Photoresist processing, Nonlinear optics, Superposition

Read Abstract +

SPIE Journal Paper | 1 July 2007

Direct optimization approach for lithographic process conditions

Tim Fühner, Andreas Erdmann, Sebastian Seifert

JM3, Vol. 6, Issue 03, 031006, (July 2007) https://doi.org/10.1117/12.10.1117/1.2785031

KEYWORDS: Photomasks, Lithography, Genetic algorithms, Lithographic illumination, Binary data, Optimization (mathematics), Manufacturing, Critical dimension metrology, Image processing, Computer simulations

Read Abstract +

Proceedings Article | 27 March 2007 Paper

The impact of the mask stack and its optical parameters on the imaging performance

Andreas Erdmann, Tim Fühner, Sebastian Seifert, Stephan Popp, Peter Evanschitzky

Proceedings Volume 6520, 65201I (2007) https://doi.org/10.1117/12.709351

KEYWORDS: Photomasks, Diffraction, Refractive index, Polarization, Semiconducting wafers, Phase shifts, Lithography, Standards development, Binary data, Imaging systems

Read Abstract +

Proceedings Article | 27 March 2007 Paper

Dr.LiTHO: a development and research lithography simulator

Tim Fühner, Thomas Schnattinger, Gheorghe Ardelean, Andreas Erdmann

Proceedings Volume 6520, 65203F (2007) https://doi.org/10.1117/12.709535

KEYWORDS: Visualization, Lithography, Data modeling, Human-machine interfaces, Computer programming, Computer simulations, Computer programming languages, C++, Data conversion, Photoresist materials

Read Abstract +

Proceedings Article | 19 May 2006 Paper

Rigorous mask modeling using waveguide and FDTD methods: an assessment for typical hyper-NA imaging problems

Andreas Erdmann, Peter Evanschitzky, Giuseppe Citarella, Tim Fühner, Peter De Bisschop

Proceedings Volume 6283, 628319 (2006) https://doi.org/10.1117/12.681872

KEYWORDS: Photomasks, Finite-difference time-domain method, Waveguides, Diffraction, Computer simulations, Polarization, Optical proximity correction, Lithography, Electromagnetism, 3D modeling

Read Abstract +

Proceedings Article | 20 March 2006 Paper

Efficient optimization of lithographic process conditions using a distributed, combined global/local search approach

Tim Fühner, Stephan Popp, Christoph Dürr, Andreas Erdmann

Proceedings Volume 6154, 61543S (2006) https://doi.org/10.1117/12.656197

KEYWORDS: Photomasks, Genetic algorithms, Optimization (mathematics), Critical dimension metrology, Lithography, Lithographic illumination, Image analysis, Evolutionary algorithms, Computer programming, Algorithm development

Read Abstract +

Proceedings Article | 12 May 2005 Paper

Improved mask and source representations for automatic optimization of lithographic process conditions using a genetic algorithm

Tim Fuhner, Andreas Erdmann

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599410

KEYWORDS: Photomasks, Optimization (mathematics), Genetic algorithms, Lithography, Lithographic illumination, Critical dimension metrology, Computer programming, Optical proximity correction, Resolution enhancement technologies, Computer simulations

Read Abstract +

Intuitive design of the lithographic process becomes increasingly complicated in the regime of off-axis illumination and optical proximity correction. Therefore, new optimization procedures have to be introduced to facilitate the search for ideal process settings. This paper proposes mutual optimization of illumination and mask geometries using an automatic optimization approach based on a genetic algorithm. As presented elsewhere, this optimization procedure has been applied to different mask representations. It has been found that a blend of a fully parameterized and a pixel-based representation, i.e., a rectangle representation, leads to highly innovative solutions, but can still maintain an acceptable convergence behavior. This representation is revisited and its main principles and limitations are shortly discussed. The main focus of this paper is on a refinement of the source geometry representation. In previous versions, the general illumination setup had to be prespecified. Merely its parameters (e.g, inner and outer radius of annular illumination, number, offset, and radius of poles for multipole illumination) were optimized. In this work, the source is represented by a sector/track definition, which allows different sections of the illumination to have different transmission values. The obtained illumination geometry is transferred into a pixel-based representation, processable by the utilized Fraunhofer IISB in-house lithography simulator. The illumination shapes achieved with the proposed approach can, for example, be produced by diffractive optics elements (DOEs). Various merit criteria determine the imaging performance of both the mask and the source settings. As the merit or fitness function plays one of the central roles in the proposed optimization scheme, individual fitness criteria and their transformation into an objective function are revisited and shortly explained. New results for both dense and chain contact hole layouts, and a comparison with former results validate the proposed approach and illustrate its further potentials.

Proceedings Article | 2 November 2004 Paper

Genetic algorithms for geometry optimization in lithographic imaging systems

Tim Fuehner, Andreas Erdmann, Thomas Schnattinger

Proceedings Volume 5558, (2004) https://doi.org/10.1117/12.560085

KEYWORDS: Photomasks, Genetic algorithms, Optimization (mathematics), Manufacturing, Lithography, Critical dimension metrology, Imaging systems, Lithographic illumination, Binary data, Resolution enhancement technologies

Read Abstract +

Proceedings Article | 28 May 2004 Paper

Toward automatic mask and source optimization for optical lithography

Andreas Erdmann, Tim Fuehner, Thomas Schnattinger, Bernd Tollkuehn

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.533215

KEYWORDS: Photomasks, Lithography, Optimization (mathematics), Critical dimension metrology, Genetic algorithms, Manufacturing, Binary data, Resolution enhancement technologies, Optical lithography, Lithographic illumination

Read Abstract +

Proceedings Article | 31 December 2003 Paper

Mask and source optimization for lithographic imaging systems

Andreas Erdmann, Richard Farkas, Tim Fuehner, Bernd Tollkuehn, Gabriela Kokai

Proceedings Volume 5182, (2003) https://doi.org/10.1117/12.504732

KEYWORDS: Photomasks, Lithography, Critical dimension metrology, Genetic algorithms, Binary data, Lithographic illumination, Optimization (mathematics), Resolution enhancement technologies, Manufacturing, Projection systems

Read Abstract +

Proceedings Article | 12 June 2003 Paper

Will Darwin's law help us to improve our resist models?

Bernd Tollkuhn, Tim Fuehner, Daniela Matiut, Andreas Erdmann, Armin Semmler, Bernd Kuechler, Gabriella Kokai

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485078

KEYWORDS: Genetic algorithms, Diffusion, Computer simulations, Optimization (mathematics), Finite element methods, Calibration, Data modeling, Performance modeling, Lithography, Chemically amplified resists

Read Abstract +

Showing 5 of 38 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years