Mr. Timothy Lin Profile

Timothy Lin

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Author

Publications (15)

SPIE Journal Paper | 2 December 2013

Impact of 14-nm photomask uncertainties on computational lithography solutions

John Sturtevant, Edita Tejnil, Timothy Lin, Steffen Schulze, Peter Buck, Franklin Kalk, Kent Nakagawa, GuoXiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

JM3, Vol. 13, Issue 01, 011004, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011004

KEYWORDS: Photomasks, Semiconducting wafers, 3D modeling, Optical proximity correction, Critical dimension metrology, Calibration, Photoresist materials, Computational lithography, Data modeling, Mathematical modeling

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Proceedings Article | 12 April 2013 Paper

Paper

The impact of 14-nm photomask uncertainties on computational lithography solutions

John Sturtevant, Edita Tejnil, Tim Lin, Steffen Schultze, Peter Buck, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 8683, 868307 (2013) https://doi.org/10.1117/12.2013748

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, 3D modeling, Calibration, Critical dimension metrology, Manufacturing, Process modeling, Data modeling, Computational lithography

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Proceedings Article | 30 June 2012 Paper

Paper

Mask process characterization of multiresolution writing

Timothy Lin, Jed Rankin, Yuki Fujita, Adam Smith, Emile Sahouria, Ahmad Elayat, Peter Thwaite, Steffen Schulze

Proceedings Volume 8441, 84411E (2012) https://doi.org/10.1117/12.978836

KEYWORDS: Photomasks, Inspection, Line edge roughness, Critical dimension metrology, Manufacturing, Source mask optimization, Semiconducting wafers, Diffusion, Visualization, Lithography

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Proceedings Article | 17 April 2012 Paper

Paper

Mask write time reduction: deployment of advanced approaches and their impact on established work models

S. Schulze, A. Elayat, T. Lin, E. Sahouria

Proceedings Volume 8352, 83520J (2012) https://doi.org/10.1117/12.923675

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Inspection, Semiconducting wafers, Manufacturing, Model-based design, Data processing, Resolution enhancement technologies, Forward error correction

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Proceedings Article | 14 October 2011 Paper

Paper

Assessment and comparison of different approaches for mask write time reduction

A. Elayat, T. Lin, E. Sahouria, S. Schulze

Proceedings Volume 8166, 816634 (2011) https://doi.org/10.1117/12.902443

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Inspection, Manufacturing, Semiconducting wafers, Optical alignment, Lithography, Model-based design, Forward error correction

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Proceedings Article | 14 October 2011 Paper

Paper

The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-contours from wafer and mask

Daisuke Hibino, Hiroyuki Shindo, Yutaka Hojyo, Thuy Do, Aasutosh Dave, Timothy Lin, Ir Kusnadi, John Sturtevant

Proceedings Volume 8166, 81661S (2011) https://doi.org/10.1117/12.898843

KEYWORDS: Optical proximity correction, Calibration, Photomasks, Data modeling, Semiconducting wafers, Scanning electron microscopy, Panoramic photography, Visualization, Process modeling, Cadmium

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Proceedings Article | 14 October 2011 Paper

Paper

Reducing shot count through optimization-based fracture

Timothy Lin, Emile Sahouria, Nataraj Akkiraju, Steffen Schulze

Proceedings Volume 8166, 81660T (2011) https://doi.org/10.1117/12.897779

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Photovoltaics, Resolution enhancement technologies, Optical proximity correction, Optimization (mathematics), Manufacturing, SRAF, Wafer-level optics

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Proceedings Article | 20 April 2011 Paper

Paper

The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-Contours from wafer and mask

Daisuke Hibino, Yutaka Hojyo, Hiroyuki Shindo, Thuy Do, Aasutosh Dave, Tim Lin, Ir Kusnadi, John Sturtevant

Proceedings Volume 7971, 79712G (2011) https://doi.org/10.1117/12.879030

KEYWORDS: Calibration, Optical proximity correction, Photomasks, Data modeling, Semiconducting wafers, Scanning electron microscopy, Cadmium, Panoramic photography, Visualization, Optical alignment

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Proceedings Article | 29 March 2011 Paper

Paper

Application of mask process correction (MPC) to monitor and correct mask process drift

Timothy Lin, Tom Donnelly, Gordon Russell, Sunwook Jung, Jiyoung Jeong

Proceedings Volume 7971, 797107 (2011) https://doi.org/10.1117/12.879119

KEYWORDS: Data modeling, Calibration, Photomasks, Critical dimension metrology, Process modeling, Manufacturing, Process control, Target detection, Feedback loops, Error analysis

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Proceedings Article | 16 March 2009 Paper

Paper

Model based mask process correction and verification for advanced process nodes

Timothy Lin, Tom Donnelly, Steffen Schulze

Proceedings Volume 7274, 72742A (2009) https://doi.org/10.1117/12.814362

KEYWORDS: Photomasks, Etching, Optical proximity correction, Process modeling, Data modeling, Semiconducting wafers, Lithography, SRAF, Calibration, Critical dimension metrology

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Proceedings Article | 17 March 2008 Paper

Paper

Inverse lithography as a DFM tool: accelerating design rule development with model-based assist feature placement, fast optical proximity correction and lithographic hotspot detection

Steve Prins, James Blatchford, Simon Chang, Lewis Flanagin, Scott Jessen, Sean O'Brien, Guangming Xiao, Timothy Lin, Thuc Dam, Bob Gleason

Proceedings Volume 6925, 69250E (2008) https://doi.org/10.1117/12.774581

KEYWORDS: Lithography, SRAF, Photomasks, Logic, Optical proximity correction, Lithographic illumination, Printing, Critical dimension metrology, Design for manufacturing, Model-based design

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Design rule (DR) development strategies were fairly straightforward at earlier technology nodes when node-on-node scaling could be accommodated easily by reduction of λ/NA. For more advanced nodes, resolution enhancement technologies such as off-axis illumination and sub-resolution assist features have become essential for achieving full shrink entitlement, and DR restrictions must be implemented to comprehend the inherent limitations of these techniques (e.g., forbidden pitches) and the complex and unanticipated 2D interactions that arise from having a large number of random geometric patterns within the optical ambit. To date, several factors have limited the extent to which 2D simulations could be used in the DR development cycle, including exceedingly poor cycle time for optimizing OPC and SRAF placement recipes per illumination condition, prohibitively long simulation time for characterizing the lithographic process window on large 2D layouts, and difficulty in detecting marginal lithographic sites using simulations based on discrete cut planes. We demonstrate the utility of the inverse lithography technology technique [1] to address these limitations in the novel context of restrictive DR development and design for manufacturability for the 32nm node. Using this technique, the theoretically optimum OPC and SRAF treatment for each layout are quickly and automatically generated for each candidate illumination condition, thereby eliminating the need for complex correction and placement recipes. "Ideal" masks are generated to explore physical limits and subsequently "Manhattanized" in accordance with mask rules to explore realistic process limits. Lithography process window calculations are distributed across multiple compute cores, enabling rapid full-chip-level simulation. Finally, pixel-based image evaluation enables hot-spot detection at arbitrary levels of resolution, unlike the 'cut line' approach. We have employed the ILT technique to explore forbidden-pitch contact hole printing in random logic. Simulations from cells placed in random context are used to evaluate the effectiveness of restricting pitches in contact hole design rules. We demonstrate how this simulation approach may not only accelerate the design rule development cycle, but also may enable more flexibility in design by revealing overly restrictive rules, or reduce the amount of hot-spot fixing required later in the design phase by revealing where restrictions are needed.

Proceedings Article | 26 March 2007 Paper

Paper

SRAF placement and sizing using inverse lithography technology

Timothy Lin, Frederic Robert, Amandine Borjon, Gordon Russell, Catherine Martinelli, Andrew Moore, Yves Rody

Proceedings Volume 6520, 65202A (2007) https://doi.org/10.1117/12.712369

KEYWORDS: SRAF, Photomasks, Manufacturing, Image quality, Lithography, Diffractive optical elements, Computer simulations, Lithographic illumination, Printing, Optical lithography

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Proceedings Article | 20 October 2006 Paper

Paper

Inverse lithography technology at low k1: placement and accuracy of assist features

Andrew Moore, Timothy Lin, Yong Liu, Gordon Russell, Linyong Pang, Daniel Abrams

Proceedings Volume 6349, 63494T (2006) https://doi.org/10.1117/12.693039

KEYWORDS: Photomasks, SRAF, Lithography, Semiconductors, Manufacturing, Computer simulations, Phase shifts, Tolerancing, Resolution enhancement technologies, Chemical elements

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Proceedings Article | 20 March 2006 Paper

Paper

Enhancing DRAM printing process window by using inverse lithography technology (ILT)

Chih-Wei Chu, Becky Tsao, Karl Chiou, Snow Lee, Jerry Huang, Yong Liu, Timothy Lin, Andrew Moore, Linyong Pang

Proceedings Volume 6154, 61543O (2006) https://doi.org/10.1117/12.657015

KEYWORDS: Photomasks, Lithography, Image quality, Semiconductors, Semiconducting wafers, Printing, Scanning electron microscopy, Light sources, Quality measurement, Manufacturing

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Proceedings Article | 8 November 2005 Paper

Paper

Inverse lithography technology: verification of SRAM cell pattern

Artur Balasinski, Andrew Moore, Nader Shamma, Timothy Lin, Hee-hong Yang

Proceedings Volume 5992, 599230 (2005) https://doi.org/10.1117/12.632344

KEYWORDS: Photomasks, Lithography, Optical proximity correction, Silicon, Calibration, Scanning electron microscopy, Semiconducting wafers, Semiconductors, Optical inspection, Reticles

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Showing 5 of 15 publications

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