Prof. Tomislav Suligoj Profile

Prof. Tomislav Suligoj

at Univ of Zagreb

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Publications (2)

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Proceedings Article | 26 February 2019 Presentation + Paper

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Tihomir Knežević, Lis Nanver, Tomislav Suligoj

Proceedings Volume 10912, 109120Y (2019) https://doi.org/10.1117/12.2508829

KEYWORDS: Doping, Silicon, Photodiodes, Boron, Electrons, Sensors, Ultraviolet radiation, Ionization, Avalanche photodiodes

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PureB single-photon avalanche diodes (SPADs) were investigated with the aid of a newly developed TCAD-based numerical modeling method with which characteristics related to the avalanching behavior can be simulated. The p⁺ region forming the anode of the PureB p⁺n photodiode is extremely shallow, only a few nanometer deep, which is essential for obtaining a high photon detection efficiency (PDE) for near-, vacuum- and extreme-ultraviolet (NUV/VUV/EUV) light detection but when an implicit guard ring (GR) is implemented, the dark count rate (DCR) can, despite the GR, be deteriorated at the very sharp corners of the p⁺-region where there is a high concentration of the electric-field. By comparing measurements to simulations, the main mechanism dominating the DCR in the PureB SPADs was identified as band-to-band tunneling (BTBT) while trap-assisted-tunneling also plays a role when the perimeter breakdown is low. Increasing the dose of carriers in the enhancement region negatively impacts the total DCR of the device, but also shifts the origin of the dominant DCR contribution from perimeter to the active region. The simulations for optimization of the SPAD geometry predict that a modification of the n-doped epitaxial region of the PureB SPADs could decrease the DCR by almost two orders of magnitude. This is achieved by increasing the n-epi-layer thickness from 1 μm to 3 μm and lowering the doping from 10¹⁵ cm^-3 to 10¹⁴ cm^-3. A high electric field at the vertical pn junction in the active region can also be minimized by modifying the implantation parameters of the n-enhancement region thus keeping the BTBT contribution to the DCR sufficiently low.

Proceedings Article | 23 February 2018 Presentation + Paper

2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

Tihomir Knežević, Lis Nanver, Tomislav Suligoj

Proceedings Volume 10526, 105261K (2018) https://doi.org/10.1117/12.2290757

KEYWORDS: TCAD, Silicon, Avalanche photodiodes, Boron, Photodiodes, Phosphorus, Computer simulations, Sensors, Single photon detectors

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PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the “quasi-2D” (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the “ionization-integral 2D” (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.

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