We proposed recently a new RF-MBE method called droplet elimination by radical-beam irradiation (DERI) for growing high-quality InN-based III-nitride films. DERI consists of two growth processes: a metal-rich growth process (MRGP) and a droplet elimination process (DEP). In InGaN growth, Ga was preferentially and selectively captured from the Ga/In wetting layer and droplets during MRGP. Then, excess In was swept out from the growing InGaN surface. The swept In was transformed to InN, epitaxially grown on top of InGaN during DEP using nitrogen radical beam irradiation. By repeating this process, an InN/InGaN MQW structure was successfully fabricated. Thick and uniform InGaN films were also successfully obtained by additionally irradiating the same Ga beam flux as that in MRGP even during DEP. When the irradiated Ga/N* beam flux ratio in DEP was changed from that in MRGP, an InxGa1-xN/InyGa1-yN MQW structure was successfully fabricated.
A new growth method, named droplet elimination by radical-beam irradiation (DERI), consisting of a metal-rich growth
process (MRGP) and a droplet elimination process (DEP), was proposed for the growth of high-quality InN. The DERI
method was also developed to the growth of InGaN ternally alloys. A periodic InN/InGaN structure was successfully
fabricated using the phenomena that Ga was preferentially captured in a growing InGaN layer and In was forced outward
to the surface in the MRGP and that the swept In was transformed to epitaxial InN on the InGaN underlayer in DEP. The
DERI method enables the simple and reproducible growth of both high-quality InN film and peridic InN/InGaN structure
by using in situ monitoring techniques.