A new photomask technology with the Advanced Binary Film (ABF) by HOYA has been established. The film of
relatively low thickness is expected to show the best lithography performance. The simple film structure of thin film of
chemically amplified resist, as a mask layer for etching, on the thin ABF film enables us to obtain sub-50nm small
features in a photomask. The thinness of the film also helps to avoid pattern collapse in cleaning steps. The photomask
with ABF expecting the best currently available lithography performance shows the best achievable durability for use in
ArF lithography process steps and the best attainable feasibility in the fabrication process steps for leading edge
photomasks.
Mask specifications of the pitch splitting type double patterning for 22nm node and beyond in logic
devices have been discussed. The influences of the mask CD error and the mask induced overlay
error on wafer CD have been investigated in both cases of bright field and dark filed. The
specification for intra-layer overlay alignment is much smaller than inter-layer one. The specification
of mask CD uniformity for dark is more challenging. In order to overcome the technology gap
between single patterning and double patterning, many things will have to be improved.
Damage to minute features of 45nm-node device masks occurred during megasonic cleaning.
Since we were obliged to weaken the mechanical effect of megasonics in order to prevent the collapse of minute
features, we could not obtain acceptable cleaning results.
In order to manage the minute features, there is a need to develop a new mechanical cleaning method that
causes less damage, but does not compromise the ability to remove particles. Cleaning using a two-fluid nozzle
is a promising candidate. We investigated the two-fluid nozzle and compared it with megasonic cleaning, and
we confirmed that the two-fluid nozzle achieved acceptable cleaning results without damaging 45nm-node
device masks. Furthermore, for 32nm-node device masks, we have improved the two-fluid nozzle in terms of
the cleaning energy distribution.
KEYWORDS: Line edge roughness, Photomasks, Electron beams, Reticles, Chemical analysis, Diffusion, Electronics, Scanning electron microscopy, Process engineering, Chemically amplified resists
We achieved highly accurate Local CD in the vicinity of 1nm with the newly developed low sensitivity
chemically amplified resist (CAR) for the e-beam reticle writer, EBM-6000. We applied shot noise model to
estimate Line Edge Roughness (LER). According to the estimation result, LER is improved by increasing the
threshold dosage. We evaluated the performance of newly developed low sensitivity CAR. Local CD
accuracy, LER, pattern resolution and drawing time are evaluated. We concluded that the performance with
the low sensitivity CAR was good enough to produce photomasks for 45nm half pitch (HP) devices.
The performance of electron beam reticle writer EBM-5000(NFT) was examined with higher
current density. The current density was raised up to 70A/cm2 against to its standard current density
50A/cm2, and sufficiently good results were obtained with that operating condition. We concluded
that the performance with that operating condition was good enough to produce photomasks for
65nm node devices.
The severe mask specification makes mask cost increase drastically. Especially, the increase in the mask cost deals ASIC businesses a fatal blow due to its small chip volume per product. Pattern writing cost has always occupied the main part of the prime mask cost and the emphasis of this is still increasing. This paper reports on a Photomask Repeater strategy to be a solution for reducing mask cost in pattern writing, comparing with conventional EB system.
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