Prof. Tomoyuki Miyamoto Profile

Prof. Tomoyuki Miyamoto

at Tokyo Institute of Technology

SPIE Involvement:

Conference Chair | Author

Proceedings Article | 13 March 2024 Poster + Paper

LED-based optical wireless power transmission through deep learning-enabled infrared spot recognition

Mingzhi Zhao, Tomoyuki Miyamoto

Proceedings Volume 12906, 129060M (2024) https://doi.org/10.1117/12.2692270

KEYWORDS: Optical transmission, Light emitting diodes, Solar cells, Liquid lenses, Collimation, Detection and tracking algorithms, Cameras

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Proceedings Article | 8 March 2024 Poster + Paper

Solar cell position, attitude determination by differential absorption imaging in optical wireless power transmission

Kaoru Asaba, Tomoyuki Miyamoto

Proceedings Volume 12881, 128810B (2024) https://doi.org/10.1117/12.3001449

KEYWORDS: Wireless energy transfer, Photovoltaics, Absorption, Solar cells, Optical imaging, Specular reflections, Image sensors, Error analysis, Transmitters, Semiconductors

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Proceedings Article | 9 May 2018 Paper

Optical wireless power transmission using VCSELs

Tomoyuki Miyamoto

Proceedings Volume 10682, 1068204 (2018) https://doi.org/10.1117/12.2309436

KEYWORDS: Solar cells, Vertical cavity surface emitting lasers, Wireless energy transfer, Light sources, Gallium arsenide, Light emitting diodes, Silicon, Safety

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Proceedings Article | 5 October 2006 Paper

High-temperature operation of a 1.2-µm single-transverse-mode highly strained GaInAs/GaAs QW laser

Shigeru Kanazawa, Kazutaka Takeda, Tomoyuki Miyamoto, Fumio Koyama

Proceedings Volume 6352, 63520L (2006) https://doi.org/10.1117/12.691841

KEYWORDS: Quantum wells, Temperature metrology, Continuous wave operation, Pulsed laser operation, Laser applications, Semiconductor lasers, Waveguide lasers, Near field, Waveguides, Laser development

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Proceedings Article | 28 August 2002 Paper

Long- and short-wavelength VCSELs

Tomoyuki Miyamoto, Kenichi Iga, Fumio Koyama

Proceedings Volume 10303, 103030F (2002) https://doi.org/10.1117/12.482618

KEYWORDS: Vertical cavity surface emitting lasers, Crystals, Optoelectronics, Head, Optical storage, Gallium arsenide, Quality systems, Reflectivity, Mirrors, Oxidation

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Proceedings Article | 4 June 2002 Paper

Temperature characteristics of 1.16 um highly strained GaInAs/GaAs VCSELs

Takashi Kondo, Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Proceedings Volume 4649, (2002) https://doi.org/10.1117/12.469248

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Gallium arsenide, Gallium, Crystals, Aluminum, Doping, Temperature metrology, Indium

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Proceedings Article | 9 July 2001 Paper

CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers

Tomoyuki Miyamoto, T. Kageyama, S. Makino, Yoshihiko Ikenaga, Fumio Koyama, Kenichi Iga

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432570

KEYWORDS: Annealing, Quantum wells, Nitrogen, Vertical cavity surface emitting lasers, Gallium arsenide, Crystals, Metalorganic chemical vapor deposition, Chlorine, Laser damage threshold, Quantum dots

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Proceedings Article | 9 November 1999 Paper

1.2-um GaInAs/GaAs lasers: are they useful for high-capacity single-mode fiber datacom?

Fumio Koyama, Dietmar Schlenker, Tomoyuki Miyamoto, Zibiao Chen, Kenichi Iga

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369409

KEYWORDS: Single mode fibers, Vertical cavity surface emitting lasers, Fiber lasers, Quantum wells, Data communications, Continuous wave operation, Modulation, Local area networks, Laser damage threshold, Data transmission

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Gigabit/s-LANs with 0.85 micrometers vertical cavity surface emitting lasers (VCSELs) are now going into the market. But, their link length is limited to be shorter than 500 m due to modal dispersion of employed multi-mode fibers and various modal problems should be considered in system design. The next step will be to develop long wavelength VCSELs matching to a single model fiber with longer link lengths of several km and higher data rates. Long wavelength single mode fiber datacom should be advantageous because of avoiding modal noise and relaxing eye safe issues. Recently, we demonstrated a 1.2 micrometers wavelength highly strained GaInAs/GaAs quantum well edge emitting laser, which exhibits reasonably low threshold and excellent temperature characteristics. The threshold current is as low as 13 mA for an as-cleaved 5 X 380 micrometers laser. A characteristic temperature T₀ under pulsed operating is as high as 140 K. This is the record high T₀ in 1.2-1.3 micrometers wavelength band. Even under 'heatsink-free' cw operations, T₀ was much higher than that of conventional 1.3 micrometers GaInAsP/InP systems. We can avoid thermoelectric coolers as well as heatsink itself, thus, an all-plastic mold package without heatsink may give us a drastic cost reduction. It is interesting to note than commercial standard single mode fibers are designed to locate a cut-off wavelength at around 1.2 micrometers for the purpose of production tolerance. A question arises: whether this 1.2 micrometers wavelength band can be utilized for single mode fiber datacom or not.We have demonstrated a 2 Gb/s-5km single mode fiber data transmission experiment using a fabricated 1.22 micrometers uncooled GaInAs/GaAs laser. We believe that the VCSEL technology may drastically improve the transmitter performances at this new wavelength band and this 1.2 micrometers Gigabit LAN may become realistic by extensive developments. In this paper, we would like to discuss a possibility of high speed datacom using a newly developed 1.2 micrometers highly strained GaInAs/GaAs lasers.

Showing 5 of 8 publications

Conference Committee Involvement (2)

Optical Power Delivery

25 January 2025 | San Francisco, California, United States

Optical Wireless and Fiber Power Transmission Conference (OWPT 2024)

22 April 2024 | Yokohama, Japan

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