Dr. Toni P. Pasanen Profile

Dr. Toni P. Pasanen

Senior Project Engineer at ElFys, Inc.

SPIE Involvement:

Author

Area of Expertise:

photodiodes , materials science , atomic layer deposition , nanostructures , silicon solar cells

Websites:

Company Website

Publications (4)

Proceedings Article | 14 March 2023 Poster + Paper

Spatial uniformity of black silicon induced junction photodiode responsivity

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni Pasanen, Hele Savin, Juha Toivanen, Mikko Juntunen

Proceedings Volume 12417, 1241713 (2023) https://doi.org/10.1117/12.2649636

KEYWORDS: Photodiodes, Black silicon, Silicon, Photometry

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Proceedings Article | 4 March 2022 Presentation + Paper

Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni Pasanen, Hele Savin, Mikko Juntunen

Proceedings Volume 11997, 119970C (2022) https://doi.org/10.1117/12.2609632

KEYWORDS: Photodiodes, Resistance, Silicon, Semiconductor lasers, Capacitance, Time metrology, Diodes, Device simulation, Semiconducting wafers

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Proceedings Article | 5 March 2021 Presentation + Paper

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Juha Heinonen, Antti Haarahiltunen, Michael Serue, Daria Kriukova, Ville Vähänissi, Toni Pasanen, Hele Savin, Mikko Juntunen

Proceedings Volume 11682, 1168207 (2021) https://doi.org/10.1117/12.2577128

KEYWORDS: Photodiodes, Silicon, Signal to noise ratio, Temperature metrology, Internal quantum efficiency

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Proceedings Article | 3 March 2020 Presentation + Paper

High-sensitivity NIR photodiodes using black silicon

Juha Heinonen, Antti Haarahiltunen, Michael Dov Serue, Ville Vähänissi, Toni Pasanen, Hele Savin, Lutz Werner, Mikko Juntunen

Proceedings Volume 11276, 112760G (2020) https://doi.org/10.1117/12.2544756

KEYWORDS: Photodiodes, External quantum efficiency, Silicon, Near infrared, Semiconducting wafers, Light scattering, Sensors, Digital signal processing, Reflectivity, Wafer-level optics

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