Mr. Toru Koike Profile

Toru Koike

at Toshiba Corp

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Author

Publications (11)

Proceedings Article | 8 November 2012 Paper

Capability of model EBEYE M for EUV mask production

Masato Naka, Shinji Yamaguchi, Motoki Kadowaki, Toru Koike, Takashi Hirano, Masamitsu Itoh, Yuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Kenji Watanabe, Hiroshi Sobukawa, Takeshi Murakami, Kiwamu Tsukamoto, Takehide Hayashi, Ryo Tajima, Norio Kimura, Naoya Hayashi

Proceedings Volume 8522, 85220K (2012) https://doi.org/10.1117/12.964099

KEYWORDS: Inspection, Signal to noise ratio, Extreme ultraviolet, Particles, Photomasks, Performance modeling, Scanning electron microscopy, Defect detection, Image acquisition, Systems modeling

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According to the ITRS Roadmap [1], within a few years the EUV mask requirement for defect will be detection of defect size of less than 25 nm. Electron Beam (EB) inspection is one of the candidates to meet such a severe defect requirement. EB inspection system, Model EBEYE M※1, has been developed for EUV mask inspection. Model EBEYE M employs Projection Electron Microscope (PEM) technique and image acquisition technique to acquire image with Time Delay Integration (TDI) sensor while the stage moves continuously [2]. Therefore, Model EBEYE M has high performance in terms of sensitivity, throughput and cost. In a previous study, we showed the performance of Model EBEYE M for 2X nm in a development phase whose sensitivity in pattern inspection was around 20 nm and in particle inspection was 20 nm with throughput of 2 hours in 100 mm square [3], [4]. With regard to pattern inspection, Model EBEYE M for High Volume Manufacturing (HVM) is currently under development in the production phase. With regard to particle inspection, Model EBEYE M for 2X nm is currently progressing from the development phase to the production phase. In this paper, the particle inspection performance of Model EBEYE M for 2X nm in the production phase was evaluated. Capture rate and repeatability were used for evaluating productivity. The target set was 100% capture rate of 20 nm. 100% repeatability of 20 nm with 3 inspection runs was also set as a target. Moreover, throughput of 1 hour in 100 mm square, which was higher than for Model EBEYE M for 2X nm in the development phase, was set as a target. To meet these targets, electron optical conditions were optimized by evaluating the Signal-to-Noise Ratio (SNR). As a result, SNR of 30 nm PSL was improved 2.5 times. And the capture rate of 20 nm was improved from 21% with throughput of 2 hours to 100% with throughput of 1 hour. Moreover, the repeatability of 20 nm with 3 inspection runs was 100% with throughput of 1 hour. From these results, we confirmed that Model EBEYE M particle inspection mode could be available for EUV mask production.

Proceedings Article | 14 October 2011 Paper

Performance of EBeyeM for EUV mask inspection

Shinji Yamaguchi, Masato Naka, Takashi Hirano, Masamitsu Itoh, Motoki Kadowaki, Tooru Koike, Yuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Kenji Watanabe, Hiroshi Sobukawa, Takeshi Murakami, Tsutomu Karimata, Kiwamu Tsukamoto, Takehide Hayashi, Ryo Tajima, Norio Kimura, Naoya Hayashi

Proceedings Volume 8166, 81662F (2011) https://doi.org/10.1117/12.898790

KEYWORDS: Inspection, Extreme ultraviolet, Particles, Signal to noise ratio, Optical inspection, Scanning electron microscopy, Sensors, Image quality, Image acquisition, Electron microscopes

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According to the ITRS Roadmap, the EUV mask requirement for 2X nm technology node is detection of defect size of 20 nm. The history of optical mask inspection tools involves continuous efforts to realize higher resolution and higher throughput. In terms of productivity, considering resolution, throughput and cost, we studied the capability of EUV light inspection and Electron Beam (EB) inspection, using Scanning Electron Microscope (SEM), including prolongation of the conventional optical inspection. As a result of our study, the solution we propose is EB inspection using Projection Electron Microscope (PEM) technique and an image acquisition technique to acquire inspection images with Time Delay Integration (TDI) sensor while the stage is continually moving. We have developed an EUV mask inspection tool, EBeyeM, whole design concept includes these techniques. EBeyeM for 2X nm technology node has the following targets, for inspection sensitivity, defects whose size is 20 nm must be detected and, for throughput, inspection time for particle and pattern inspection mode must be less than 2 hours and 13 hours in 100 mm square, respectively. Performance of the proto-type EBeyeM was reported. EBeyeM for 2X nm technology node was remodeled in light of the correlation between Signal to Noise Ratio (SNR) and defect sensitivity for the proto-type EBeyeM. The principal remodeling points were increase of the number of incident electrons to TDI sensor by increasing beam current for illuminating optics and realization of smaller pixel size for imaging optics. This report presents the performance of the remodeled EBeyeM (=EBeyeM for 2X nm) and compares it with that of the proto-type EBeyeM. Performances of image quality, inspection sensitivity and throughput reveal that the EBeyeM for 2X nm is improved. The current performance of the EBeyeM for 2X nm is inspection sensitivity of 20 nm order for both pattern and particle inspection mode, and throughput is 2 hours in 100 mm square for particle inspection mode.

Proceedings Article | 29 September 2010 Paper

Development of EB inspection system EBeyeM for EUV mask

Takashi Hirano, Shinji Yamaguchi, Masato Naka, Masamitsu Itoh, Motoki Kadowaki, Tooru Koike, Yuuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Hiroshi Sobukawa, Takeshi Murakami, Kiwamu Tsukamoto, Takehide Hayashi, Kenji Watanabe, Norio Kimura, Naoya Hayashi

Proceedings Volume 7823, 78232C (2010) https://doi.org/10.1117/12.864208

KEYWORDS: Inspection, Extreme ultraviolet, Prototyping, Particles, Photomasks, Optical inspection, Defect inspection, Defect detection, Electron microscopes, Scanning electron microscopy

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Proceedings Article | 2 April 2010 Paper

Characterization of cross sectional profile of nanostructure line grating using small angle x-ray scattering

Y. Ishibashi, T. Koike, Y. Yamazaki, Y. Ito, Y. Okazaki, K. Omote

Proceedings Volume 7638, 763812 (2010) https://doi.org/10.1117/12.848193

KEYWORDS: Transmission electron microscopy, X-rays, Silicon, Metrology, Critical dimension metrology, Diffraction, Scattering, Nondestructive evaluation, Nanostructures, Reflection

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SPIE Journal Paper | 1 October 2006

Evaluation of producer's and consumer's risks in scatterometry and scanning electron microscopy metrology for inline critical dimension metrology

Masafumi Asano, Takahiro Ikeda, Toru Koike, Hideaki Abe

JM3, Vol. 5, Issue 04, 043006, (October 2006) https://doi.org/10.1117/12.10.1117/1.2397034

KEYWORDS: Scanning electron microscopy, Scatterometry, Metrology, Critical dimension metrology, Monte Carlo methods, Inspection, Stereolithography, Manufacturing, Time metrology, Optical proximity correction

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Proceedings Article | 24 March 2006 Paper

Inline CD metrology with combined use of scatterometry and CD-SEM

Masafumi Asano, Takahiro Ikeda, Toru Koike, Hideaki Abe

Proceedings Volume 6152, 61521V (2006) https://doi.org/10.1117/12.656326

KEYWORDS: Scatterometry, Critical dimension metrology, Metrology, Scanning electron microscopy, Monte Carlo methods, Inspection, Time metrology, Statistical analysis, Optics manufacturing, Line edge roughness

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Proceedings Article | 10 May 2005 Paper

Usage of profile information obtained with scatterometry

Toru Koike, Masafumi Asano, Toru Mikami, Yuichiro Yamazaki

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600325

KEYWORDS: Scatterometry, Photoresist materials, Critical dimension metrology, Metrology, Silicon, Atomic force microscopy, Data modeling, Process control, Scatter measurement, Semiconducting wafers

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Proceedings Article | 10 May 2005 Paper

Sampling plan optimization for CD control in low k1 lithography

Masafumi Asano, Toru Koike, Toru Mikami, Hideaki Abe, Takahiro Ikeda, Satoshi Tanaka, Shoji Mimotogi

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600370

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Error analysis, Lithography, Neptunium, Metrology, Statistical analysis, Manufacturing, Reticles, Process control

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Proceedings Article | 29 June 1998 Paper

Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography

Masafumi Asano, Yumiko Maruyama, Toru Koike, Kenji Chiba, Eishi Shiobara, Takahiro Ikeda

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312447

KEYWORDS: Photoresist processing, Image processing, Lithography, Critical dimension metrology, Etching, Excimer lasers, Scanning electron microscopy, Reactive ion etching, Lithographic illumination, Geometrical optics

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Proceedings Article | 29 June 1998 Paper

Resist edge roughness with reducing pattern size

Eishi Shiobara, Daisuke Kawamura, Kentaro Matsunaga, Toru Koike, Shoji Mimotogi, Tsukasa Azuma, Yasunobu Onishi

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312421

KEYWORDS: Edge roughness, Solids, Photography, Excimer lasers, Radium, Laser scanners, 3D scanning, Scanning electron microscopy, Microelectronics, Quenching (fluorescence)

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Proceedings Article | 24 July 1996 Paper

Focused ion-beam imaging of defects on deep-UV single-layer halftone masks

Hiroko Nakamura, Haruki Komano, Kazuyoshi Sugihara, T. Koike, Iwao Higashikawa

Proceedings Volume 2793, (1996) https://doi.org/10.1117/12.245222

KEYWORDS: Image filtering, Halftones, Digital filtering, Deep ultraviolet, Ion beams, Transmittance, Optical filters, Silicon, Chromium, Quartz

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Showing 5 of 11 publications

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