Dr. Trey Graves Profile

Dr. Trey Graves

Research Scientist at KLA Texas

SPIE Involvement:

Author

Publications (29)

Proceedings Article | 21 November 2023 Presentation + Paper

Presentation + Paper

Rigorous 3D probabilistic computational lithography and chip-level inspection for EUV stochastic failure detection

Eunju Kim, Wooseok Kim, Jonggwan Lee, Seongjong Kim, Sukyong Lee, Nohong Kwak, Mincheol Kang, Yongchul Jeong, Myungsoo Hwang, Chang-Min Park, Kyoil Koo, Seongtae Jeong, John Biafore, Mark Smith, Trey Graves, Anatoly Burov, Pradeep Vukkadala, Guy Parsey, Cao Zhang, Kunlun Bai, Janez Krek, Craig Higgins, Sergei Bakarian, Kyeongeun Ko, Roel Gronheid, Kaushik Sah, Andrew Cross, Yi Liu, Alessandro Vaglio Pret, Chris Walker, Vikram Tolani, George Hwa, Peter Hu, Chang Song, Alex Arkhipov, Loemba Bouckou, Chi-Ping Liu, Xiaochun Yang, Kana O'Hara, Donghwan Son

Proceedings Volume 12750, 127500C (2023) https://doi.org/10.1117/12.2687373

KEYWORDS: Stochastic processes, Inspection, Extreme ultraviolet, Computational lithography, Printing, Semiconducting wafers, Photoresist materials, Extreme ultraviolet lithography, Statistical analysis, Physical phenomena

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Proceedings Article | 26 March 2019 Presentation + Paper

Presentation + Paper

OPC strategies to reduce failure rates with rigorous resist model stochastic simulations in EUVL

Alessandro Vaglio Pret, Trey Graves, David Blankenship, Stewart Robertson, Patrick Lee, John Biafore

Proceedings Volume 10957, 109570J (2019) https://doi.org/10.1117/12.2515124

KEYWORDS: Stochastic processes, Failure analysis, Optical proximity correction, Model-based design, Computer simulations, Extreme ultraviolet lithography

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Proceedings Article | 3 October 2018 Presentation + Paper

Presentation + Paper

Non‐Gaussian CD distribution characterization for DRAM application in EUV lithography

Alessandro Vaglio Pret, Inhwan Lee, Mijung Lim, David Blankenship, Trey Graves, Stewart Robertson, John Biafore

Proceedings Volume 10809, 108090A (2018) https://doi.org/10.1117/12.2501820

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet lithography, Stochastic processes, Optical lithography, Extreme ultraviolet, Calibration, Photoresist processing

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Proceedings Article | 19 March 2018 Paper

Paper

Comparative stochastic process variation bands for N7, N5, and N3 at EUV

Alessandro Vaglio Pret, Trey Graves, David Blankenship, Kunlun Bai, Stewart Robertson, Peter De Bisschop, John Biafore

Proceedings Volume 10583, 105830K (2018) https://doi.org/10.1117/12.2299825

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Lithography, Computer simulations, Extreme ultraviolet, Chemically amplified resists, Photoresist materials

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Proceedings Article | 27 March 2017 Presentation + Paper

Presentation + Paper

Modeling and simulation of low-energy electron scattering in organic and inorganic EUV photoresists

Alessandro Vaglio Pret, Trey Graves, David Blankenship, John Biafore

Proceedings Volume 10146, 1014609 (2017) https://doi.org/10.1117/12.2261434

KEYWORDS: Photoresist materials, Scattering, Extreme ultraviolet lithography, Absorption, Data modeling, Modeling and simulation, Organic materials, Inorganic hybrid materials, Lithography, Nanoimprint lithography, Calibration, Extreme ultraviolet, Stochastic processes

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Proceedings Article | 3 October 2016 Paper

Paper

Quantifying imaging performance bounds of extreme dipole illumination in high NA optical lithography

Myungjun Lee, Mark Smith, John Biafore, Trey Graves, Ady Levy

Proceedings Volume 9985, 99850X (2016) https://doi.org/10.1117/12.2240904

KEYWORDS: Lithographic illumination, Nanoimprint lithography, Reticles, Optical lithography, Lithography, Scanners, Code division multiplexing, Artificial intelligence, Diffraction, Photomasks

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We present a framework to analyze the performance of optical imaging in a hyper numerical aperture (NA) immersion lithography scanner. We investigate the method to quantify imaging performance by computing upperand lower-bounds on the threshold normalized image log-slope (NILS) and the depth of focus (DOF) in conjunction with the traditional image quality metrics such as the mask error enhancement factor (MEEF) and the linearity for various different pitches and line to space (LS) duty cycles. The effects of the interaction between the light illumination and the feature size are extensively characterized based on the aerial image (AI) behavior in particular for the extreme dipole illumination that is one of the commonly used off-axis illuminations for sub-100nm logic and memory devices, providing resolution near the physical limit of an optical single patterning step. The proposed aerial imaging-based DOF bounds are compared to the results obtained from an experimentally calibrated resist model, and we observed good agreement. In general, the extreme dipole illumination is only optimal for a single particular pitch, therefore understanding the through-pitch imaging performance bound, which depends on the illumination shape, pattern size, and process conditions, is critically important. We find that overall imaging performance varies depending upon the number of diffracted beams passing through the scanner optics. An even number of beams provides very different trends compared to the results from an odd-number of beams. This significant non-linear behavior occurs in certain pitch regions corresponding to 3 beam interference imaging. In this region the imaging performance and the pattern printability become extremely sensitive to the LS duty cycle. In addition, there is a notable tradeoff between the DOF and the NILS that is observed in the problematic 3-beam region and this tradeoff eventually affects the achievable process window (PW). Given the practical real world constraints such as the design rules and target design restrictions, computing upper- and lower-bounds of the through-pitch DOF and NILS will be especially useful for both lithographers and metrology target designers in understanding this complex behavior, as well as helping in the design of optimal targets used for applications including alignment, overlay control, and process control in high volume semiconductor manufacturing.

Proceedings Article | 24 March 2016 Paper

Paper

Gaining insight into effective metrology height through the use of a compact CDSEM model for lithography simulation

Chao Fang, Trey Graves, Alessandro Vaglio Pret, Stewart Robertson, Mark Smith

Proceedings Volume 9778, 97780B (2016) https://doi.org/10.1117/12.2219776

KEYWORDS: Metrology, Lithography, Scanning electron microscopy, Computer simulations, Optical lithography, Manufacturing, Photoresist processing, Calibration, Inspection, Monte Carlo methods, 3D metrology, Critical dimension metrology, 3D acquisition, Stochastic processes

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Proceedings Article | 20 March 2015 Paper

Paper

DSA graphoepitaxy calibrations for contact hole multiplication

Trey Graves, Alessandro Vaglio Pret, Stewart Robertson, Mark Smith, Jan Doise, Joost Bekaert, Roel Gronheid

Proceedings Volume 9425, 94250Y (2015) https://doi.org/10.1117/12.2086137

KEYWORDS: Calibration, Polymethylmethacrylate, 3D modeling, Data modeling, Scanning electron microscopy, Systems modeling, Optimization (mathematics), Optical lithography, Process control, Directed self assembly

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Proceedings Article | 31 March 2014 Paper

Paper

Topographic and other effects on EUV pattern fidelity

Chandra Sarma, Trey Graves, Mark Neisser, Stewart Robertson

Proceedings Volume 9052, 905206 (2014) https://doi.org/10.1117/12.2047920

KEYWORDS: Extreme ultraviolet, Critical dimension metrology, Photomasks, Electrons, Transistors, Optical proximity correction, Deep ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography

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Proceedings Article | 1 April 2013 Paper

Paper

Evaluating the effect of EUV multilayer buried defects on feature printability using a stochastic resist model

Trey Graves, John Biafore, Mark Smith, Stewart Robertson, Chao Fang

Proceedings Volume 8679, 86791Z (2013) https://doi.org/10.1117/12.2011369

KEYWORDS: Stochastic processes, Extreme ultraviolet, Photomasks, Line width roughness, Lithography, Extreme ultraviolet lithography, Line edge roughness, Semiconducting wafers, Reflectivity, Light scattering

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Proceedings Article | 8 April 2011 Paper

Paper

Impact of mask line roughness in EUV lithography

Alessandro Vaglio Pret, Roel Gronheid, Trey Graves, Mark Smith, John Biafore

Proceedings Volume 7969, 79691T (2011) https://doi.org/10.1117/12.879463

KEYWORDS: Photomasks, Line edge roughness, Extreme ultraviolet lithography, Stochastic processes, Extreme ultraviolet, Metrology, Diffraction, Lithography, Data modeling, Semiconducting wafers

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SPIE Journal Paper | 1 April 2011

Mask absorber roughness impact in extreme ultraviolet lithography

Alessandro Vaglio Pret, Roel Gronheid, Trey Graves, Mark Smith, John Biafore

JM3, Vol. 10, Issue 02, 023012, (April 2011) https://doi.org/10.1117/12.10.1117/1.3599077

KEYWORDS: Photomasks, Line edge roughness, Extreme ultraviolet lithography, Metrology, Stochastic processes, Extreme ultraviolet, Lithography, Diffraction, Photoresist processing, Data modeling

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Proceedings Article | 29 March 2011 Paper

Paper

Comprehensive EUV lithography model

Mark Smith, Trey Graves, John Biafore, Stewart Robertson, Cheolkyun Kim, James Moon, Jaeheon Kim, Cheolkyu Bok, Donggyu Yim

Proceedings Volume 7969, 796906 (2011) https://doi.org/10.1117/12.879766

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Data modeling, Photomasks, Calibration, Extreme ultraviolet, Point spread functions, Lithography, Photoresist materials, Stochastic processes

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Proceedings Article | 26 March 2010 Paper

Paper

Reflectivity metrics for optimization of anti-reflection coatings on wafers with topography

Mark Smith, Trey Graves, John Biafore, Stewart Robertson

Proceedings Volume 7639, 763935 (2010) https://doi.org/10.1117/12.846540

KEYWORDS: Reflectivity, Semiconducting wafers, Diffraction, Critical dimension metrology, Antireflective coatings, Oxides, Double patterning technology, Lithography, Photomasks, Coating

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Proceedings Article | 10 March 2010 Paper

Paper

The impact of optical non-idealities in litho-litho-etch processing

Stewart Robertson, Michael Reilly, Trey Graves, Mark Smith, John Biafore

Proceedings Volume 7640, 76400G (2010) https://doi.org/10.1117/12.846553

KEYWORDS: Refractive index, Photoresist processing, Coating, Optical properties, Photoresist materials, Refraction, Semiconducting wafers, Scattering, Double patterning technology, Interfaces

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Proceedings Article | 10 March 2010 Paper

Paper

Methods for benchmarking photolithography simulators: part V

Trey Graves, Mark Smith, Sanjay Kapasi

Proceedings Volume 7640, 764033 (2010) https://doi.org/10.1117/12.846376

KEYWORDS: Performance modeling, Semiconducting wafers, Optical lithography, Oxides, Lithography, Standards development, Photomasks, Double patterning technology, Computer simulations, Polymers

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Proceedings Article | 1 April 2009 Paper

Paper

Statistical simulation of resist at EUV and ArF

John Biafore, Mark Smith, Chris Mack, James Thackeray, Roel Gronheid, Stewart Robertson, Trey Graves, David Blankenship

Proceedings Volume 7273, 727343 (2009) https://doi.org/10.1117/12.813551

KEYWORDS: Photons, Extreme ultraviolet, Quantum efficiency, Absorption, Line width roughness, Stochastic processes, Extreme ultraviolet lithography, Monte Carlo methods, Data modeling, Lithography

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Proceedings Article | 1 April 2009 Paper

Paper

Simulation of optical lithography in the presence of topography and spin-coated films

Stewart Robertson, Michael Reilly, Trey Graves, John Biafore, Mark Smith, Damien Perret, Vladimir Ivin, Sergey Potashov, Mikhail Silakov, Nikolay Elistratov

Proceedings Volume 7273, 727340 (2009) https://doi.org/10.1117/12.813557

KEYWORDS: Semiconducting wafers, Coating, Silicon, Photoresist materials, Lithography, Scanning electron microscopy, Etching, Optical lithography, Reflectivity, Natural surfaces

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Proceedings Article | 16 March 2009 Paper

Paper

Investigating the impact of topography on pitch splitting double patterning using rigorous physical simulation

Stewart Robertson, Trey Graves, John Biafore, Mark Smith

Proceedings Volume 7274, 72740P (2009) https://doi.org/10.1117/12.813566

KEYWORDS: Double patterning technology, Etching, Photoresist processing, Metals, Oxides, Photomasks, Photoresist materials, Tin, Semiconducting wafers, Lithography

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Proceedings Article | 4 April 2008 Paper

Paper

Rigorous physical modeling of a materials-based frequency doubling lithography process

Stewart Robertson, John Biafore, Trey Graves, Mark Smith

Proceedings Volume 6923, 69230I (2008) https://doi.org/10.1117/12.772736

KEYWORDS: Double patterning technology, Image processing, Photoresist processing, Semiconducting wafers, Lithography, Process modeling, Refractive index, Photomasks, Second-harmonic generation, Manufacturing

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Proceedings Article | 4 March 2008 Paper

Paper

RET selection using rigorous, physics-based computational lithography

Sanjay Kapasi, Trey Graves, Mark Smith, Stewart Robertson, Chris Sallee

Proceedings Volume 6925, 69251D (2008) https://doi.org/10.1117/12.772872

KEYWORDS: Resolution enhancement technologies, Binary data, Optical proximity correction, Computational lithography, Fiber optic illuminators, Photoresist processing, Semiconducting wafers, Calibration, Lithography, Electroluminescence

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Over the past several years, choosing the best Resolution Enhancement Technique (RET) has become more and more difficult. The RET implementation team is faced with an ever increasing number of variables to attempt to optimize. Also, for a given node, there are now more layers designated as critical pattern layers requiring RET. As design rules become more aggressive, and scanners have more process parameters such as polarization and focus drilling, RET must be optimized across a larger number of variables than before. Sorting through the best combination of all of the available process parameters could potentially require the number of wafer experiments to increase exponentially. Rigorous, physics-based computational lithography is the perfect tool for executing the large number of experiments, virtually, culling out dramatically the actual number of physical wafer experiments required for verification. Ideally, first pass RET selection needs to be made as early as possible in the technology cycle, well before the equipment is available. Traditional OPC tools, which require wafer process data to set up are not suited to this task, as they can only be used after the equipment has been installed and a stable, established process exists. Rigorous physical and chemical models, such as those found in PROLITH, are better suited to early RET selection and optimization but the Windows platform, where PROLITH is used, is computationally too slow for the massive number of calculations required. In this study, we focus on the RET selection process for a set of "typical" critical test patterns, using KLATencor's other rigorous, physics-based computational lithography tool, LithoWare. LithoWare combines the accuracy of rigorous physical and chemical models with the computational power of distributed computing on Linux. We examine the use of cluster computing in optimizing the illuminators using model based OPC and process window analysis for critical contact hole (CH) patterns. We use the results to propose a comprehensive RET selection strategy to meet the user requirements of 45nm and 32 nm development.

Proceedings Article | 26 March 2007 Paper

Paper

Lithographic characterization of evanescent-wave imaging systems

Trey Graves, Mark Smith, Stewart Robertson

Proceedings Volume 6520, 65203G (2007) https://doi.org/10.1117/12.712350

KEYWORDS: Lithography, Immersion lithography, Solids, Imaging systems, Photoresist processing, Photomasks, Fiber optic illuminators, Critical dimension metrology, Liquids, Interferometry

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Proceedings Article | 26 March 2007 Paper

Paper

The modeling of double patterning lithographic processes

Stewart Robertson, Trey Graves, Mark Smith, John Biafore

Proceedings Volume 6520, 65200J (2007) https://doi.org/10.1117/12.714137

KEYWORDS: Double patterning technology, Etching, Lithography, Prototyping, Reticles, Oxides, Optical lithography, Light wave propagation, Semiconducting wafers, Photoresist materials

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Proceedings Article | 23 March 2007 Paper

Paper

Mechanistic simulation of line-edge roughness

John Biafore, Mark Smith, Stewart Robertson, Trey Graves

Proceedings Volume 6519, 65190Y (2007) https://doi.org/10.1117/12.712868

KEYWORDS: Diffusion, Particles, Line edge roughness, Polymers, Stochastic processes, Photoresist materials, Fractal analysis, Molecules, Optical lithography, Critical dimension metrology

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Proceedings Article | 20 March 2006 Paper

Paper

Methods for benchmarking photolithography simulators: part IV

Trey Graves, Mark Smith, Chris Mack

Proceedings Volume 6154, 61542X (2006) https://doi.org/10.1117/12.660031

KEYWORDS: Performance modeling, Lithography, Optical lithography, Polymers, Photomasks, Calculus, Imaging systems, Computer simulations, Optical proximity correction, Diffusion

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Proceedings Article | 5 November 2005 Paper

Paper

Methods for benchmarking photolithography simulators: Part III

Mark Smith, Trey Graves, Jeffrey Byers, Chris Mack

Proceedings Volume 5992, 59925H (2005) https://doi.org/10.1117/12.634465

KEYWORDS: Photomasks, Diffraction, Maxwell's equations, Lithography, Computer simulations, Quartz, Diffraction gratings, Finite-difference time-domain method, Dielectric polarization, Optical lithography

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Proceedings Article | 5 November 2005 Paper

Paper

The impact of attenuated phase shift mask topography on hyper-NA lithography

Chris Mack, Mark Smith, Trey Graves

Proceedings Volume 5992, 59920Z (2005) https://doi.org/10.1117/12.632510

KEYWORDS: Photomasks, Diffraction, Phase shifts, Lithography, Transmittance, Error analysis, Quartz, Polarization, Tellurium, Reticles

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Proceedings Article | 12 May 2005 Paper

Paper

Methods for benchmarking photolithography simulators: part III

Mark Smith, Trey Graves, Jeffrey Byers, Chris Mack

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601518

KEYWORDS: Photomasks, Diffraction, Maxwell's equations, Lithography, Computer simulations, Quartz, Diffraction gratings, Optical lithography, Dielectrics, Transmittance

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Proceedings Article | 12 May 2005 Paper

Paper

The impact of mask topography on binary reticles at the 65nm node

Mark Smith, Trey Graves, Jeffrey Byers, Chris Mack

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601523

KEYWORDS: Photomasks, Maxwell's equations, Reticles, Binary data, Cadmium, Optical proximity correction, Optical properties, Fiber optic illuminators, Lithography, Scattering

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Showing 5 of 29 publications

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