Prof. Tsumoru Shintake Profile

Prof. Tsumoru Shintake

at Okinawa Institute of Science and Technology Graduate Univ

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Proceedings Article | 26 August 2024 Paper

Can we improve the energy efficiency of EUV lithography?

Tsumoru Shintake

Proceedings Volume 13177, 131770M (2024) https://doi.org/10.1117/12.3035018

KEYWORDS: Mirrors, Light sources and illumination, Extreme ultraviolet, Projection systems, Diffraction, Semiconducting wafers, Mirror surfaces, Design, Extreme ultraviolet lithography, Partial coherence

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This paper discusses a simple, low-cost, highly efficient two-mirror projector with a simplified illumination system. The EUV source power can be reduced by 1/10 compared to the current six-mirror EUV projector system. The required EUV power is 20 watts for process speed of 100 wafers per hour. The proposed in-line projector achieves 0.2 NA (20 mm field) and 0.3 NA (10 mm field), which can be assembled in a cylindrical tube configuration similar to a DUV projector, providing superior mechanical stability and easier assembly/maintenance. The EUV light is introduced in front of the mask through two narrow cylindrical mirrors located on both side of the diffraction cone, providing average normal illumination and reducing the mask 3D effect. The simplified illumination system provides symmetric quadrupole off-axis illumination, bypassing central obscuration and improving spatial resolution, also realizing Köhler illumination. The theoretical resolution limit is 24 nm (20 mm field), image reduction factor x5 and Object Image Distance (OID) 2000 mm. With the curved surface mask, the tool height can be reduced to (OID) 1500 mm, which provides resolution 16 nm (10 mm field). It will be suitable for small die size chip production for mobile applications as well as the latest chiplet technology.

Proceedings Article | 1 December 2022 Presentation + Paper

Proposal of plane-parallel resonator configuration for high-NA EUV lithography

Tsumoru Shintake

Proceedings Volume 12292, 1229209 (2022) https://doi.org/10.1117/12.2642903

KEYWORDS: Photomasks, Mirrors, Diffraction, Semiconducting wafers, Lithography, Extreme ultraviolet lithography

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The mask pattern is created on the multilayer reflection mirror in the EUV lithography. This is the origin of the issues such as the absorber shadowing (mask-3D) and contrast loss at high-NA tool. To solve these issues, this paper presents conceptual discussions on a new configuration which employs rotating mirror (precession beam) to illuminate the mask from normal direction with small tilt angle matches to the numerical aperture: 8.3 deg at 0.55 NA and 11.3 deg at 0.71 NA, both angles are acceptable for multi-layer mirror of the mask. Unlike current EUV machine design, all optical components are axial symmetric and aligned on axis (in-line), and thus form a plane-parallel resonator configuration. xand y-magnifications are same 4x, and full-field 33 mm x 26 mm may be possible at high-NA as high as 0.71. Annular slit at the back focal plane acts as Fourier spatial filter, which removes 3D components, thus resulting image becomes longitudinally projected mask pattern without shadows. The system becomes a both-side telecentric camera, providing long depth-of-focus and high contrast image. As the objective mirror, Schwarzschild objective or Wolter telescope will be a suitable candidate. Wolter telescope is axisymmetric and lighter than conventional solid concave mirror, therefore, a larger diameter mirror can be fabricated in high precession. After the objective mirror, all diffractions have the same angles to the axis (cone beam) including the illumination beam. A new concept “the generalized interference lithography” will be introduced as the working principle of pattern writing on the wafer.

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