As extreme ultraviolet lithography (EUVL) enters high volume manufacturing (HVM), the integrated circuit (IC) industry considers actinic patterned mask inspection (APMI) to be the last major EUV mask infrastructure gap. For over 20 years, there have been calls for an APMI tool for both the final qualification of EUV masks in the mask shop and for the requalification of EUV masks in the wafer fab1. Actinic, in this context, is matching the 13.5 nm scanner wavelength to that of the inspection tool so that all types of EUV mask defects can be detected. In order to enable EUVL HVM, we have developed and introduced the world’s first commercially available APMI tool. Actinic inspection enables HVM EUVL by ensuring that the EUV mask going to the EUV scanner is free from EUVprintable defects that may have been overlooked during EUV blank manufacturing or occurred during EUV mask manufacturing, cleaning and use. In this paper we will review EUV mask defect requirements from the maskshop and fab perspective, as well as capabilities of different inspection methods available for HVM. Further, we will provide an overview of the history of APMI tool development and highlight challenges and successes made when designing major components for the tool. APMI enables reliable detection of all classes of EUV-printable mask defects: small absorber defects, phase and amplitude defects in the multi-layer, In this paper, inspection performance of the APMI tool will be reviewed using representative cases from programmed defect masks with designs resembling real production cases. Finally, we will provide an outlook for the next steps in tool development including Die-to-Database inspection, throughpellicle inspection and platform extendibility to high NA EUVL.
As extreme ultraviolet (EUV) lithography enters high volume manufacturing, the semiconductor industry has considered a lithography-wavelength-matched actinic patterned mask inspection (APMI) tool to be a major remaining EUV mask infrastructure gap. Now, an actinic patterned mask inspection system has been developed to fill this gap. Combining experience gained from developing and commercializing the 13.5nm wavelength actinic blank inspection (ABI) system with decades of deep ultraviolet (DUV) patterned mask defect inspection system manufacturing, we have introduced the world’s first high-sensitivity actinic patterned mask inspection and review system, the ACTIS A150 (ACTinic Inspection System). Producing this APMI system required developing and implementing new technologies including a high-intensity EUV source and high-numerical aperture EUV optics. The APMI system achieves extremely high sensitivity to defects because of its high-resolution, low noise imaging. It has demonstrated a capability to detect mask defects having an estimated lithographic impact of 10% CD deviation on the printed wafer.
Optical metrology tool, LX530, is designed for high throughput and dense sampling metrology in semiconductor manufacture. It can inspect the dose and focus variation in the process control based on the critical dimension (CD) and line edge roughness (LER) measurement. The working principle is shown with a finite-difference-time-domain (FDTD) CD simulation. Two optical post lithography wafers, including one focus-exposure-matrix (FEM) wafer and one nominal wafer, are inspected for CD, dose and focus analysis. It is demonstrated that dose and focus can be measured independently. A data output method based on global CD uniformity (CDU), inter CDU and intra CDU is proposed to avoid the data volume issue in dense sampling whole wafer inspection.
We have developed a sensor optical system for the Far Infrared Interferometric Telescope (FITE). The spatial
resolution of FITE is expected to be 2.5 arcseconds. In order to derive the spatial extent of target objects, the
visibility of interference fringes has to be measured precisely. For this purpose, we constructed the focal plane
assembly of the FITE interferometer with the sensor optics. The focal plane is the entrance focus of the sensor
optics. A far-infrared (FIR) array detector is installed on the final focal plane of the sensor optics. Its camera
optics has F/106 beam for each beam of the interferometer. The PSF is dominated by diffraction, and its size
corresponds approximately to the array size so that the fringe pattern can be measured by the array in real time.
This system employs of two IR detectors and an optical CCD. The FIR detector has a format of 1.5mm ×15
pixels. In addition to the FIR array detector, we have a mid-IR detector and an optical CCD. They are also
installed on the final focal plane of the sensor optics. These two detectors are used for the precise alignment of the