Prof. Ulrich T. Schwarz Profile

Prof. Ulrich T. Schwarz

Professor at Technische Univ Chemnitz

SPIE Involvement:

Conference Chair | Conference Program Committee | Editor | Author

Publications (37)

Proceedings Article | 16 February 2020 Presentation + Paper

Critical discussion of the determination of internal losses in state-of-the-art (Al,In)GaN laser diodes

Dominic Kunzmann, Raphael Kohlstedt, Tino Uhlig, Ulrich Schwarz

Proc. SPIE. 11280, Gallium Nitride Materials and Devices XV

KEYWORDS: Mirrors, Waveguides, Error analysis, Semiconductor lasers, Optical spectroscopy, Diodes, Optical simulations, Laser damage threshold, Waveguide lasers, Spectroscopes

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Proceedings Article | 16 February 2020 Paper

Angular resolved far-field dynamics of (Al,In)GaN laser diodes

Hassan Banayeem, Matthias Damm, Yijie Mu, Ulrich Schwarz, Georg Bruederl, Soenke Tautz, Harald König

Proc. SPIE. 11280, Gallium Nitride Materials and Devices XV

KEYWORDS: Refractive index, Light sources, Waveguides, Glasses, Spectroscopy, Semiconductor lasers, Temporal resolution, Streak cameras, Thermal effects, Pulsed laser operation

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Proceedings Article | 14 March 2018 Presentation

Carrier dynamics and modulation of (Al,In)GaN laser diodes (Conference Presentation)

Matthias Wachs, Ulrich Schwarz

Proc. SPIE. 10532, Gallium Nitride Materials and Devices XIII

KEYWORDS: Light sources, Modulation, Semiconductor lasers, Frequency combs, Integrated optics, Carrier dynamics, Laser based displays, Virtual reality, Heads up displays, RGB color model

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Proceedings Article | 9 March 2016 Presentation + Paper

Hybrid polymer waveguide characterization for microoptical tools with integrated laser diode chips for optogenetic applications at 430 nm and 650 nm

Michael Schwaerzle, Julian Nehlich, Ulrich Schwarz, Oliver Paul, Patrick Ruther

Proc. SPIE. 9690, Clinical and Translational Neurophotonics; Neural Imaging and Sensing; and Optogenetics and Optical Manipulation

KEYWORDS: Light sources, Waveguides, Tissues, Polymers, Silicon, Semiconductor lasers, Optogenetics, Bismuth, Polymer multimode waveguides, Brain

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Proceedings Article | 15 May 2014 Paper

The photonic solar cell: system design and efficiency estimations

Oliver Höhn, Tobias Kraus, Ulrich Schwarz, Benedikt Bläsi

Proc. SPIE. 9140, Photonics for Solar Energy Systems V

KEYWORDS: Mirrors, Solar cells, Crystals, Dielectrics, Gallium arsenide, Photonic crystals, Photonics systems, Thin film solar cells, Solar energy systems, Absorption

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Proceedings Article | 15 May 2014 Paper

Study of plasmonic nanoparticle arrays for photon management in solar cells

Benedikt Bläsi, Sabrina Jüchter, Sarah-Katharina Meisenheimer, Oliver Höhn, Hubert Hauser, Christine Wellens, Thomas Fix, Ulrich Schwarz

Proc. SPIE. 9140, Photonics for Solar Energy Systems V

KEYWORDS: Plasmonics, Polarization, Nanoparticles, Glasses, Particles, Solar cells, Silicon, Silver, Nanoimprint lithography, Absorption

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Proceedings Article | 8 March 2014 Paper

Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress

M. Meneghini, S. Carraro, G. Meneghesso, N. Trivellin, G. Mura, F. Rossi, G. Salviati, K. Holc, T. Weig, L. Schade, M. Karunakaran, J. Wagner, U. Schwarz, E. Zanoni

Proc. SPIE. 8986, Gallium Nitride Materials and Devices IX

KEYWORDS: Quantum wells, Luminescence, Diffusion, Quantum efficiency, Semiconductor lasers, Gallium nitride, Laser damage threshold, Indium gallium nitride, Electro optics, Spectroscopes

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Proceedings Article | 27 February 2014 Paper

Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes

Katarzyna Holc, Annik Jakob, Thomas Weig, Klaus Köhler, Oliver Ambacher, Ulrich Schwarz

Proc. SPIE. 9002, Novel In-Plane Semiconductor Lasers XIII

KEYWORDS: Waveguides, Scattering, Interfaces, Laser scattering, Surface roughness, Semiconductor lasers, Gallium nitride, Diodes, Waveguide lasers, Electroluminescent displays

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Proceedings Article | 27 February 2014 Paper

Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes

Thomas Weig, Gerrit Lükens, Katarzyna Holc, Klaus Köhler, Joachim Wagner, Ulrich Schwarz

Proc. SPIE. 9002, Novel In-Plane Semiconductor Lasers XIII

KEYWORDS: Quantum wells, Waveguides, Q switching, Semiconductor lasers, Gallium nitride, Solids, Q switched lasers, Lanthanum, Electroluminescent displays, Absorption

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Proceedings Article | 5 March 2013 Paper

Micro-optical system as integration platform for III-N nanowire based opto-chemical detectors

R. Kleindienst, V. Cimalla, M. Eickhoff, A. Grewe, K. Holc, J. Schätzle, U. Schwarz, J. Teubert, S. Sinzinger

Proc. SPIE. 8613, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI

KEYWORDS: Fabrication, Mirrors, Optical design, Polymethylmethacrylate, Sensors, Oxygen, Semiconductor lasers, Beam shaping, Data conversion, Nanowires

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Proceedings Article | 4 March 2013 Paper

Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes

Thomas Weig, Ulrich Schwarz, Luca Sulmoni, Jean-Michel Lamy, Jean-François Carlin, Nicolas Grandjean, Dmitri Boiko

Proc. SPIE. 8640, Novel In-Plane Semiconductor Lasers XII

KEYWORDS: Quantum wells, Resonators, Mode locking, Indium, Electroluminescence, Semiconductor lasers, Streak cameras, Epitaxy, Picosecond phenomena, Absorption

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Proceedings Article | 4 March 2013 Paper

Picosecond pulse generation in monolithic GaN-based multi-section laser diodes

Katarzyna Holc, Thomas Weig, Wilfried Pletschen, Klaus Köhler, Joachim Wagner, Ulrich Schwarz

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Quantum wells, Waveguides, Etching, Image processing, Photons, Semiconductor lasers, Scanning electron microscopy, Gallium nitride, Picosecond phenomena, Absorption

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Proceedings Article | 18 February 2013 Paper

30 W peak-power 3 ns pulse-width operation of a 2 µm electro-optically cavity-dumped VECSEL

Sebastian Kaspar, Marcel Rattunde, Tino Töpper, Steffen Adler, Ulrich Schwarz, Christian Manz, Klaus Köhler, Joachim Wagner

Proc. SPIE. 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III

KEYWORDS: Semiconductors, Mirrors, Quantum wells, Polarization, Photons, Polarizers, Semiconductor lasers, Electro optics, Disk lasers, Pulsed laser operation

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SPIE Journal Paper | 13 November 2012

Laser processing of gallium nitride-based light-emitting diodes with ultraviolet picosecond laser pulses

Rüdiger Moser, Michael Kunzer, Christian Goßler, Klaus Köhler, Wilfried Pletschen, Ulrich Schwarz, Joachim Wagner

OE Vol. 51 Issue 11

KEYWORDS: Light emitting diodes, Laser processing, Photomasks, Laser ablation, Picosecond phenomena, Semiconducting wafers, Ultraviolet radiation, Sapphire, Gallium nitride, Laser systems engineering

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Proceedings Article | 9 May 2012 Paper

Laser processing of GaN-based LEDs with ultraviolet picosecond laser pulses

Rüdiger Moser, Michael Kunzer, Christian Goßler, Ralf Schmidt, Klaus Köhler, Wilfried Pletschen, Ulrich Schwarz, Joachim Wagner

Proc. SPIE. 8433, Laser Sources and Applications

KEYWORDS: Light emitting diodes, Optical lithography, Laser processing, Laser ablation, Sapphire, Photomasks, Picosecond phenomena, Semiconducting wafers, Pulsed laser operation, Laser systems engineering

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Proceedings Article | 2 May 2012 Paper

Optimization of angularly selective photonic filters for concentrator photovoltaic

O. Höhn, M. Peters, C. Ulbrich, A. Hoffmann, U. Schwarz, B. Bläsi

Proc. SPIE. 8438, Photonics for Solar Energy Systems IV

KEYWORDS: Thin films, Photovoltaics, Optical filters, Refractive index, Solar concentrators, Reflection, Solar cells, Gallium arsenide, Photonic crystals, Optical simulations

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Proceedings Article | 2 May 2012 Paper

Preparation of periodically arranged metallic nanostructures using nanoimprint lithography

S. Jüchter, H. Hauser, Ch. Wellens, A. Guttowski, M. Peters, J. C. Goldschmidt, U. Schwarz, B. Bläsi

Proc. SPIE. 8438, Photonics for Solar Energy Systems IV

KEYWORDS: Lithography, Nanostructures, Nanoparticles, Particles, Solar cells, Silicon, Silver, Platinum, Nanoimprint lithography, Absorption

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Proceedings Article | 28 February 2012 Paper

Auger effect in nonpolar quantum wells

Lukas Schade, Ulrich Schwarz, Tim Wernicke, Jens Rass, Simon Ploch, Markus Weyers, Michael Kneissl

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Quantum wells, Light emitting diodes, Polarization, Crystals, Indium, Quantum efficiency, Gallium nitride, Promethium, Indium gallium nitride, Internal quantum efficiency

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Proceedings Article | 28 February 2012 Paper

Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN

Jens Rass, Tim Wernicke, Simon Ploch, Moritz Brendel, Andreas Kruse, Andreas Hangleiter, Wolfgang Scheibenzuber, Ulrich Schwarz, Markus Weyers, Michael Kneissl

Proc. SPIE. 8262, Gallium Nitride Materials and Devices VII

KEYWORDS: Quantum wells, Resonators, Waveguides, Polarization, Crystals, Indium, Semiconductor lasers, Gallium nitride, Laser resonators, Laser damage threshold

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Proceedings Article | 9 February 2012 Paper

(Al,In)GaN laser diodes with optimized ridge structures

Katarzyna Holc, Klaus Köhler, Wilfried Pletschen, Joachim Wagner, Ulrich Schwarz

Proc. SPIE. 8277, Novel In-Plane Semiconductor Lasers XI

KEYWORDS: Mirrors, Quantum wells, Resonators, Semiconductor lasers, Gallium nitride, Diodes, Aluminum, Indium gallium nitride, Semiconducting wafers, Waveguide lasers

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Proceedings Article | 17 February 2011 Paper

Dynamics of GaN-based laser diodes from violet to green

Wolfgang Scheibenzuber, Christian Hornuss, Ulrich Schwarz

Proc. SPIE. 7953, Novel In-Plane Semiconductor Lasers X

KEYWORDS: Transparency, Light emitting diodes, Photons, Indium, Electroluminescence, Semiconductor lasers, Optical simulations, Laser damage threshold, Picosecond phenomena, Pulsed laser operation

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Proceedings Article | 17 February 2011 Paper

Recent results of blue and green InGaN laser diodes for laser projection

Stephan Lutgen, Dimitri Dini, Ines Pietzonka, Soenke Tautz, Andreas Breidenassel, Alfred Lell, Adrian Avramescu, Christoph Eichler, Teresa Lermer, Jens Müller, Georg Bruederl, Alvaro Gomez-Iglesias, Uwe Strauss, Wolfgang Scheibenzuber, Ulrich Schwarz, Bernhard Pasenow, Stephan Koch

Proc. SPIE. 7953, Novel In-Plane Semiconductor Lasers X

KEYWORDS: Continuous wave operation, Waveguides, Laser applications, Semiconductor lasers, Gallium nitride, Diodes, Laser damage threshold, Indium gallium nitride, Pulsed laser operation, Temperature metrology

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Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and the wall plug efficiency of blue and green lasers. We report on improvements of the performance of true blue riedge waveguide InGaN lasers at 452nm with cw-output power up to 800mW in overstress and mono mode operation up to 500mW in a temperatures range of 20°C to 80°C. We succeeded in high and almost temperature independent wall plug efficiencies >20% at stable output power levels from 200 to 500mW in cw-operation. Due to several improvements of our blue laser diodes we now estimate life times is in the order of 40khrs for 80mW output power in cw-operation at 40°C. Additional overstress degradation tests at power levels up to 200mW show a strong dependency of lifetime with output power. Furthermore, we present pioneering results on true green InGaN laser diodes on c-plane GaN-substrates. The technological challenge is to achieve In-rich InGaN-quantum wells with sufficiently high material quality for lasing. We investigated the competing recombination processes below laser threshold like nonradiative defect recombination by electro-optical measurements, such confirming that low defect densities are essential for stimulated emission. A model for alloy fluctuations in In-rich InGaN-MQWs based on spectral and time resolved photoluminescence measurements yields potential fluctuations in the order of E₀=57meV for our blue laser diodes. To get a closer insight into the physics of direct green InGaN-Laser we investigated the inhomogeneous broadening of experimentally measured gain curves via Hakki-Paoli-measurements in comparison to calculated gain spectra based on microscopic theory showing the importance of strong LO-phonon coupling in this material system. Investigations of current dependent gain measurements and calculations yield a factor of 2 higher inhomogeneous broadening for our green lasers than for our blue laser diodes on c-plane GaN. Based on the improvements of the material quality and design we demonstrate true green InGaN-Laser in cw-operation at 522nm with more than 80mW output power on c-plane GaN. The combination of low laser threshold ~60-80mA, high slope efficiency ~0.65W/A and low operating voltage 6.9-6.4V of our green monomode RWG-Laser results in a high wall plug efficiency of 5-6% in a temperature range of 20-60°C.

Proceedings Article | 16 February 2009 Paper

Emission of biased green quantum wells in time and wavelength domain

Ulrich Schwarz

Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV

KEYWORDS: Quantum wells, Light emitting diodes, Modulation, Spectroscopy, Luminescence, Quantum efficiency, Electroluminescence, Streak cameras, Indium gallium nitride, Green light emitting diodes

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Proceedings Article | 3 February 2009 Paper

Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes

Harald Braun, Stephan Rogowsky, Ulrich Schwarz, Stefanie Brüninghof, Alfred Lell, Uwe Strauß

Proc. SPIE. 7230, Novel In-Plane Semiconductor Lasers VIII

KEYWORDS: Superposition, Refractive index, Gaussian beams, Waveguides, Laser beam propagation, Semiconductor lasers, Near field scanning optical microscopy, Near field, Modes of laser operation, Near field optics

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Proceedings Article | 8 May 2008 Paper

Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes

Harald Braun, Dominik Scholz, Tobias Meyer, Ulrich Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Proc. SPIE. 6997, Semiconductor Lasers and Laser Dynamics III

KEYWORDS: Superposition, Refractive index, Waveguides, Semiconductor lasers, Near field scanning optical microscopy, Thermal effects, Optical simulations, Modes of laser operation, Temperature metrology, Near field optics

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Proceedings Article | 8 May 2008 Paper

Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate

Tobias Meyer, Harald Braun, Ulrich Schwarz, Désirée Queren, Marc Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß

Proc. SPIE. 6997, Semiconductor Lasers and Laser Dynamics III

KEYWORDS: Quantum wells, Waveguides, Electroluminescence, Semiconductor lasers, Gallium nitride, Aluminum, Optical simulations, Laser damage threshold, Indium gallium nitride, Silicon carbide

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Proceedings Article | 21 April 2008 Paper

Analysis of the emission characteristics of photonic crystal LEDs

Ch. Wiesmann, K. Bergenek, N. Linder, U. Schwarz

Proc. SPIE. 6989, Photonic Crystal Materials and Devices VIII

KEYWORDS: Semiconductors, Diffraction, Refractive index, Mirrors, Light emitting diodes, Finite-difference time-domain method, Interfaces, Photonic crystals, Solids, Indium gallium nitride

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Proceedings Article | 15 February 2008 Paper

True-blue InGaN laser for pico size projectors

U. Strauβ, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, U. Schwarz

Proc. SPIE. 6894, Gallium Nitride Materials and Devices III

KEYWORDS: Quantum wells, Magnesium, Luminescence, Laser applications, Reflectivity, Doping, Semiconductor lasers, Projection systems, Laser damage threshold, Indium gallium nitride

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Proceedings Article | 19 November 2007 Paper

Optical gain in 407nm and 470nm InGaN/GaN heterostructures: signature of quantum-dot states

B. Witzigmann, S. Steiger, M. Tomamichel, R. Veprek, U. Schwarz

Proc. SPIE. 6782, Optoelectronic Materials and Devices II

KEYWORDS: Quantum wells, Polarization, Indium, Semiconductor lasers, Gallium nitride, Lab on a chip, Integrated optics, Indium gallium nitride, Heterojunctions, Statistical modeling

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Proceedings Article | 23 March 2007 Paper

Analysis of substrate modes in GaN/InGaN lasers

Bernd Witzigmann, Valerio Laino, Friedhard Roemer, Christoph Lauterbach, Ulrich Schwarz, Christian Rumbolz, Martin Schillgalies, Alfred Lell, Uwe Strauss, Volker Härle

Proc. SPIE. 6468, Physics and Simulation of Optoelectronic Devices XV

KEYWORDS: Semiconductors, Refractive index, Waveguides, Dispersion, Metals, Semiconductor lasers, Gallium nitride, Optical simulations, Waveguide modes, Near field optics

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Proceedings Article | 13 February 2007 Paper

Measurement of the internal quantum efficiency of InGaN quantum wells

A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn

Proc. SPIE. 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI

KEYWORDS: Quantum wells, Light emitting diodes, Magnesium, Luminescence, Doping, Gallium nitride, Indium gallium nitride, Electron holes, Internal quantum efficiency, Temperature metrology

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Proceedings Article | 8 February 2007 Paper

Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range

Ulrich Schwarz, Harald Braun, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Shinichi Nagahama, Takashi Mukai

Proc. SPIE. 6485, Novel In-Plane Semiconductor Lasers VI

KEYWORDS: Near ultraviolet, Quantum wells, Data modeling, Electrons, Indium, Semiconductor lasers, Optical simulations, Indium gallium nitride, Gallium, Standards development

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Proceedings Article | 14 April 2006 Paper

Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

U. Schwarz, C. Lauterbach, M. Schillgalies, C. Rumbolz, M. Furitsch, A. Lell, V. Härle

Proc. SPIE. 6184, Semiconductor Lasers and Laser Dynamics II

KEYWORDS: Quantum wells, Waveguides, Etching, Microscopy, Semiconductor lasers, Near field scanning optical microscopy, Near field, Indium gallium nitride, Oscilloscopes, Waveguide modes

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Proceedings Article | 14 April 2006 Paper

Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers

Bernd Witzigmann, Valerio Laino, Mathieu Luisier, Friedhard Roemer, Georg Feicht, Ulrich Schwarz

Proc. SPIE. 6184, Semiconductor Lasers and Laser Dynamics II

KEYWORDS: Optical design, Quantum wells, Luminescence, Crystals, Semiconductor lasers, Gallium nitride, Optical simulations, Laser damage threshold, Indium gallium nitride, Temperature metrology

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Proceedings Article | 12 April 2005 Paper

Formation of Ince-Gaussian modes in a stable laser oscillator

Ulrich Schwarz, Miguel Bandres, Julio Gutierrez-Vega

Proc. SPIE. 5708, Laser Resonators and Beam Control VIII

KEYWORDS: Monochromatic aberrations, Mirrors, Reticles, Oscillators, Resonators, Output couplers, Crystals, Semiconductor lasers, Diodes, Laser crystals

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Proceedings Article | 1 April 2005 Paper

Near-field and far-field dynamics of (Al,In)GaN laser diodes

Ulrich Schwarz, Markus Pindl

Proc. SPIE. 5738, Novel In-Plane Semiconductor Lasers IV

KEYWORDS: Refractive index, Beam steering, Waveguides, Semiconductor lasers, Monte Carlo methods, Near field scanning optical microscopy, Near field, Wave propagation, Solids, Waveguide modes

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Proceedings Article | 11 May 2004 Paper

Nitride-based in-plane laser diodes with vertical currrent path

Ulrich Schwarz, Werner Wegscheider, Alfred Lell, Volker Haerle

Proc. SPIE. 5365, Novel In-Plane Semiconductor Lasers III

KEYWORDS: Mirrors, Modulation, Waveguides, Etching, Nitrogen, Semiconductor lasers, Gallium nitride, Sapphire, Silicon carbide, Waveguide modes

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Showing 5 of 37 publications

Proceedings Volume Editor (6)

SPIE Conference Volume | 9 March 2020

Gallium Nitride Materials and Devices XV

SPIE Conference Volume | 7 June 2019

Gallium Nitride Materials and Devices XIV

SPIE Conference Volume | 23 May 2018

Gallium Nitride Materials and Devices XIII

SPIE Conference Volume | 27 March 2017

Gallium Nitride Materials and Devices XII

SPIE Conference Volume | 21 July 2016

Gallium Nitride Materials and Devices XI

Showing 5 of 6 publications

Conference Committee Involvement (18)

Gallium Nitride Materials and Devices XVI

6 March 2021 | San Francisco, California, United States

Optogenetics and Optical Manipulation 2021

6 March 2021 | San Francisco, California, United States

Gallium Nitride Materials and Devices XV

4 February 2020 | San Francisco, California, United States

Optogenetics and Optical Manipulation 2020

1 February 2020 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIV

4 February 2019 | San Francisco, California, United States

Optogenetics and Optical Manipulation 2019

2 February 2019 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIII

29 January 2018 | San Francisco, California, United States

Optogenetics and Optical Manipulation 2018

27 January 2018 | San Francisco, California, United States

Gallium Nitride Materials and Devices XII

30 January 2017 | San Francisco, California, United States

Optogenetics and Optical Manipulation

28 January 2017 | San Francisco, California, United States

Gallium Nitride Materials and Devices XI

15 February 2016 | San Francisco, California, United States

Optogenetics and Optical Manipulation

13 February 2016 | San Francisco, California, United States

Gallium Nitride Materials and Devices X

9 February 2015 | San Francisco, California, United States

Optogenetics and Optical Control of Cells

7 February 2015 | San Francisco, California, United States

Gallium Nitride Materials and Devices IX

3 February 2014 | San Francisco, California, United States

Gallium Nitride Materials and Devices VIII

4 February 2013 | San Francisco, California, United States

Gallium Nitride Materials and Devices VII

23 January 2012 | San Francisco, California, United States

Gallium Nitride Materials and Devices VI

24 January 2011 | San Francisco, California, United States

Showing 5 of 18 Conference Committees

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